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1.
Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption–Transient Current Technique / Pape, Sebastian (CERN ; Tech. U., Dortmund (main)) ; García, Marcos Fernández (CERN ; Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Wiehe, Moritz (CERN)
The Two-Photon Absorption–Transient Current Technique (TPA-TCT) is a device characterisation technique that enables three-dimensional spatial resolution. Laser light in the quadratic absorption regime is employed to generate excess charge carriers only in a small volume around the focal spot. [...]
2024 - 17 p. - Published in : Sensors 24 (2024) 5443 Fulltext: PDF;
2.
High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique / García, Marcos Fernández (CERN ; Cantabria Inst. of Phys.) ; Echeverría, Richard Jaramillo (Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Santos, Raúl Montero (U. Basque Country, Leioa) ; Palomo Pinto, Rogelio (Seville U.) ; Vila, Iván (Cantabria Inst. of Phys.) ; Wiehe, Moritz (CERN)
The Two Photon Absorption Transient Current Technique (TPA-TCT) is a tool to characterize semiconductor detectors using a spatially confined laser probe. Excess charge carriers are produced by the simultaneous absorption of two sub-bandgap photons in the material. [...]
Elsevier, 2020 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162865
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162865
3.
High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT) / García, Marcos Fernández (Cantabria Inst. of Phys.) ; Sánchez, Javier González (Cantabria Inst. of Phys.) ; Echeverría, Richard Jaramillo (Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Santos, Raúl Montero (SGIker Laser Facility, UPV/EHU, Leioa-Bizkaia) ; Moya, David (Cantabria Inst. of Phys.) ; Pinto, Rogelio Palomo (Pablo de Olavide U., Seville) ; Vila, Iván (Cantabria Inst. of Phys.)
For the first time, the deep n-well (DNW) depletion space of a High Voltage CMOS sensor has been characterized using a Transient Current Technique based on the simultaneous absorption of two photons. This novel approach has allowed to resolve the DNW implant boundaries and therefore to accurately determine the real depleted volume and the effective doping concentration of the substrate. [...]
2017 - Published in : Nucl. Instrum. Methods Phys. Res., A 845 (2017) 69-71 Elsevier Open Access article: PDF;
In : 14th Vienna Conference on Instrumentation, Vienna, Austria, 15 - 19 Feb 2016, pp.69-71
4.

CMS-PHO-OREACH-2005-008
© 2005 CERN, for the benefit of the CMS Collaboration
Arrival at CERN of the first MB4 DT chambers from Turin
The largest DT chambers to be installed into the o [...]
16 Feb 2005

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