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Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS
/ Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p.
- Published in : JPS Conf. Proc. 42 (2024) 011021
Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
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Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS)
/ Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007
Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
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Digital cells radiation hardness study of TPSCo 65 nm CIS technology by designing a ring oscillator
/ Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Habib, A (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM)
The CPPM group has long been designing and testing HV-CMOS blocks to complete monolithic chips in various technologies (TJ180, LF150, AMS) in the framework of several collaborations. In 2020, we participated in the MLR1 run in TowerJazz 65 nm technology through CERN’s EP-R&D; WP1.2, by designing a ring oscillator test chip. [...]
2023 - 8 p.
- Published in : JINST 18 (2023) C02063
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02063
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4.
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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Latest Developments and Results of Radiation Tolerance CMOS Sensors with Small Collection Electrodes
/ Tortajada, I Asensi (CERN ; Valencia U.) ; Allport, P (Birmingham U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN ; Zagreb U., Phys. Dept.) ; Bespin, C (Bonn U.) ; Bhat, S (Marseille, CPPM) ; Bortoletto, D (Oxford U. ; JAI, UK) ; Breugnon, P (Marseille, CPPM) ; Buttar, C (Glasgow U.) et al.
This contribution will present the latest developments after the MALTA and Mini-MALTA sensors. It will illustrate the improvements and results of the Czochralski substrate with a bigger depletion zone to improve efficiency. [...]
2021 - 8 p.
- Published in : JPS Conf. Proc. 34 (2021) 010009
Fulltext: PDF;
In : 29th International Workshop on Vertex Detectors, Virtual, Japan, 5 - 8 Oct 2020, pp.010009
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Progress in DMAPS developments and first tests of the Monopix2 chips in 150 nm LFoundry and 180 nm TowerJazz technology
/ Dingfelder, J (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Degerli, Y (IRFU, Saclay) ; Flores Sanz de Acedo, L (CERN) et al.
Depleted Monolithic Active Pixel Sensors (DMAPS) are monolithic pixel detectors with high-resistivity substrates designed for use in high-rate and high-radiation environments. They are produced in commercial CMOS processes, resulting in relatively low production costs and short turnaround times, and offer a low material budget. [...]
2022 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1034 (2022) 166747
In : 30th International Workshop on Vertex Detectors (VERTEX 2021), Online, UK, 27 - 30 Sep 2021, pp.166747
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Studies for low mass, large area monolithic silicon pixel detector modules using the MALTA CMOS pixel chip
/ Riedler, P (CERN) ; Asensi Tortajada, I (Valencia U., IFIC) ; Barbero, M B (Marseille, CPPM) ; Berdalovic, I (Zagreb U.) ; Buttar, C (Glasgow U.) ; Cardella, R (Oslo U.) ; Dachs, F (CERN) ; Dao, V (CERN) ; Dyndal, M (CERN) ; Flores Sanz de Acedo, L (Glasgow U.) et al.
The MALTA monolithic silicon pixel sensors have been used to study dicing and thinning of monolithic silicon pixel detectors for large area and low mass modules. Dicing as close as possible to the active circuitry will allow to build modules with very narrow inactive regions between the sensors. [...]
2021 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 990 (2021) 164895
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164895
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9.
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Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies
/ Wang, T (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Bhat, S (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Chen, Z (Marseille, CPPM) et al.
The monolithic CMOS pixel sensor for charged particle tracking has already become a mainstream technology in high energy particle physics (HEP) experiments. During the last decade, progressive improvements have been made for CMOS pixels to deal with the high-radiation and high-rate environments expected, for example, at the future High Luminosity LHC. [...]
SISSA, 2020 - 10 p.
- Published in : PoS Vertex2019 (2020) 026
Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.026
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