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1.
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High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances
/ Martinella, C (Zurich, ETH) ; Race, S (Zurich, ETH) ; Stark, R (Zurich, ETH) ; Alia, R G (CERN) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U.) ; Grossner, U (Zurich, ETH)
Accelerated single event burnout (SEB) tests with 200 MeV protons and atmospheric neutrons were performed for commercial silicon carbide (SiC) power MOSFETs with different architectures (i.e., planar gate, asymmetric trench, and symmetric trench). The average electric fields over the depletion layer width and the electric field distributions are reported for the tested conditions and compared for the three architectures, confirming the necessity of a lower de-rating for the trench design to protect from SEB, compared to planar ones. [...]
2023 - 8 p.
- Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1844-1851
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2.
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Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
/ Røed, Ketil (Oslo U.) ; Eriksen, Dag Øistein (Oslo U.) ; Ceccaroli, Bruno (Unlisted, NO) ; Martinella, Corinna (Jyvaskyla U. ; CERN) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U.) ; Reshanov, Sergey (Unlisted, SE) ; Massetti, Silvia (ESTEC, Noordwijk)
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. [...]
2022 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 69 (2022) 1675-1682
Fulltext from publisher: PDF;
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3.
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Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
/ Martinella, C (Jyvaskyla U. ; CERN ; ETH, Zurich (main)) ; Natzke, P (ETH, Zurich (main)) ; Alia, R G (CERN) ; Kadi, Y (CERN) ; Niskanen, K (Jyvaskyla U.) ; Rossi, M (Jyvaskyla U.) ; Jaatinen, J (Jyvaskyla U.) ; Kettunen, H (Jyvaskyla U.) ; Tsibizov, A (ETH, Zurich (main)) ; Grossner, U (ETH, Zurich (main)) et al.
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and
high-energy accelerator applications. However, the current commercial technologies are still susceptible to
Single Event Effects (SEEs) and latent damages induced by the radiation environment. [...]
2022 - 7 p.
- Published in : Microelectron. Reliab. 128 (2022) 114423
Fulltext: PDF;
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4.
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Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
/ Martinella, C (Jyvaskyla U. ; CERN ; Zurich, ETH) ; Alia, R G (CERN) ; Stark, R (Zurich, ETH) ; Coronetti, A (Jyvaskyla U. ; CERN) ; Cazzaniga, C (Rutherford) ; Kastriotou, M (Rutherford) ; Kadi, Y (CERN) ; Gaillard, R (Unlisted, FR) ; Grossner, U (Zurich, ETH) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U.)
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench, and double-trench architectures. The results were used to calculate the failure cross sections and the failure-in-time (FIT) rates at sea level [...]
2021 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 68 (2021) 634-641
fulltext from publisher: PDF;
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5.
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Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
/ Martinella, C (CERN ; Jyvaskyla U.) ; Stark, R (Zurich, ETH) ; Ziemann, T (Zurich, ETH) ; Alia, R G (CERN) ; Kadi, Y (CERN) ; Grossner, U (Zurich, ETH) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U. (main))
High sensitivity of silicon-carbide (SiC) power MOSFETs has been observed under heavy-ion irradiation, leading to permanent increase of drain and gate leakage currents. The electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. [...]
2019 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1702-1709
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1702-1709
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6.
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Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
/ Martinella, C (CERN) ; Ziemann, T (Zurich, ETH) ; Stark, R (Zurich, ETH) ; Tsibizov, A (Zurich, ETH) ; Voss, K O (Darmstadt, GSI) ; Alia, R G (CERN) ; Kadi, Y (CERN) ; Grossner, U (Zurich, ETH) ; Javanainen, A (Jyvaskyla U.)
Heavy-ion microbeams are employed for probing
the radiation-sensitive regions in commercial silicon carbide (SiC)
vertical double-diffused power (VD)-MOSFETs with micrometer
accuracy. By scanning the beam spot over the die, a spatial
periodicity was observed in the leakage current degradation,
reflecting the striped structure of the power MOSFET investigated. [...]
2020 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 67 (2020) 1381-1389
Fulltext from publisher: PDF;
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7.
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8.
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A Systematic Analysis of the Prompt Dose Distribution at the Large Hadron Collider
/ Stein, Oliver (CERN) ; Biłko, Kacper (CERN) ; Brugger, Markus (CERN) ; Danzeca, Salvatore (CERN) ; Di Francesca, Diego (CERN) ; Garcia Alia, Ruben (CERN) ; Kadi, Yacine (CERN) ; Li Vecchi, Gaetano (CERN) ; Martinella, Corinna (CERN)
During the operation of the Large Hadron Collider (LHC) the continuous particle losses create a mixed particle radiation field in the LHC tunnel and the adjacent caverns. Exposed electronics and accelerator components show dose dependent accelerated aging effects. [...]
2018 - 3 p.
- Published in : 10.18429/JACoW-IPAC2018-WEPAF082
Fulltext: PDF;
In : 9th International Particle Accelerator Conference, Vancouver, Canada, 29 Apr - 4 May 2018, pp.WEPAF082
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