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Direct evidence of Be as an amphoteric dopant in GaN / Wahl, U. (IST, Lisbon) ; Correia, J. G. (IST, Lisbon) ; Costa, A. R. G. (KU Leuven) ; Lima, T. A. L. (KU Leuven) ; Moens, J. (KU Leuven) ; Kappers, M. J. (Cambridge U.) ; da Silva, M. R. (Aveiro U., CICECO) ; Pereira, L. M. C. (KU Leuven) ; Vantomme, A. (KU Leuven) /IS634 Collaboration
The interest in Be as an impurity in GaN stems from the challenge to understand why GaN can be doped p type with Mg, while this does not work for Be. While theory has actually predicted an acceptor level for Be that is shallower than Mg, it was also argued that Be is not a suitable acceptor because its am-photeric nature, i.e. [...]
2022 - Published in : Phys. Rev. B 105 (2022) 184112 Postprint from Phys. Rev. B 105 (2022) 184112: PDF; Supplemental Material from Phys. Rev. B 105 (2022) 184114: PDF;

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Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN / IS634 Collaboration
Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation remains a challenge. The lattice location of $^{27}$Mg is investigated in GaN of different doping types as a function of implantation temperature and fluence at CERN's ISOLDE facility. [...]
2021 - 10 p. - Published in : Advanced Electronic Materials 7 (2021) 2100345 Submitted version, due to embargo period until 19.6.2022: PDF; Supporting Information: PDF;

Detaljnije - Slični zapisi

Također vidi: slična imena autora
1	Kappers, Menno
3	Kappers, Menno J
1	Kappers, Menno J.

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