Fleetwood, Daniel M - Résultats de la recherche

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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs / Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436 Fulltext: PDF;

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Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors / Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Termo, Gennaro (CERN) ; Michelis, Stefano (CERN) ; Costanzo, Sebastiano (CERN) ; Koch, Henri D (CERN) ; Fleetwood, Daniel M (Vanderbilt U.)
MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order to assess the impact of this effect and to understand its origin, an extensive measurement campaign has been carried out at different DRs, different temperatures, and different biases. [...]
2021 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 573-580

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Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses / Bonaldo, Stefano (U. Padua (main)) ; Gerardin, Simone (U. Padua (main)) ; Jin, Xiaoming (Northwest Inst. Nucl. Tech., Xian) ; Paccagnella, Alessandro (U. Padua (main)) ; Faccio, Federico (CERN) ; Borghello, Giulio (CERN) ; Fleetwood, Daniel M (Vanderbilt U. (main))
In this paper, a commercial 65-nm CMOS technology is irradiated at ultrahigh ionizing doses and then annealed at high temperature under different bias conditions. The experimental results demonstrate the high sensitivity of pMOSFETs to radiation-induced short-channel effects, related to the buildup of defects in spacer dielectrics. [...]
2019 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1574-1583
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1574-1583

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Influence of LDD Spacers and H$^+$ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses / Faccio, Federico (CERN) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Lerario, Edoardo (CERN ; U. Salento, Lecce (main)) ; Fleetwood, Daniel M (Vanderbilt U. (main)) ; Schrimpf, Ronald D (Vanderbilt U. (main)) ; Gong, Huiqi (Vanderbilt U. (main)) ; Zhang, En Xia (Vanderbilt U. (main)) ; Wang, P (Vanderbilt U. (main)) ; Michelis, Stefano (CERN) ; Gerardin, Simone (U. Padua (main)) et al.
The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is strongly gate-length dependent. The current drive decreases during irradiation, and the threshold voltage often shifts significantly during irradiation and/or high-temperature annealing, depending on transistor polarity, applied field, and irradiation/annealing temperature. [...]
2017 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 65 (2018) 164-174
In : 54th Annual IEEE International Nuclear and Space Radiation Effects Conference, New Orleans, LA, USA, 17 - 21 Jul 2017, pp.164-174

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Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses / Borghello, Giulio (CERN ; U. Udine (main)) ; Faccio, Federico (CERN) ; Lerario, Edoardo (CERN ; U. Salento, Lecce (main)) ; Michelis, Stefano (CERN) ; Kulis, Szymon (CERN) ; Fleetwood, Daniel M (Vanderbilt U. (main)) ; Schrimpf, Ronald D (Vanderbilt U. (main)) ; Gerardin, Simone (U. Padua (main)) ; Paccagnella, Alessandro (U. Padua (main)) ; Bonaldo, Stefano (U. Padua (main))
The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxides surrounding the transistors. Recent results in 65-nm FETs demonstrated that performance degradation in ultrahigh total ionizing dose (TID) experiments is due to defects in the isolation shallow trench isolation oxide or in the materials composing the lightly doped drain spacers. [...]
2018 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 65 (2018) 1482-1487

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Voir aussi: noms d'auteurs similaires
2	Fleetwood, D M
5	Fleetwood, Dan
1	Fleetwood, Dan M

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