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Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS
/ Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p.
- Published in : JPS Conf. Proc. 42 (2024) 011021
Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
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Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS)
/ Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007
Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
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Cross-talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180nm CMOS technology
/ Schall, Lars (Bonn U.) ; Bespin, Christian (Bonn U.) ; Caicedo, Ivan (Bonn U.) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Moustakas, Konstantinos (Bonn U.) ; Pernegger, Heinz (CERN) et al.
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. [...]
arXiv:2402.12153.-
2024-04-19 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169381
Fulltext: Publication - PDF; 2402.12153 - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169381
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Characterisation and simulation of stitched CMOS strip sensors
/ Davis, Naomi (DESY) ; Arling, Jan-Hendrik (DESY) ; Baselga, Marta (Dortmund U.) ; Diehl, Leena (Freiburg U. ; CERN) ; Dingfelder, Jochen (Bonn U.) ; Gregor, Ingrid-Maria (DESY) ; Hauser, Marc (Freiburg U.) ; Hügging, Fabian (Bonn U.) ; Hemperek, Tomasz (Bonn U. ; Unlisted, CH) ; Jakobs, Karl (Freiburg U.) et al.
In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. [...]
arXiv:2405.08667.-
2024-04-29 - 4 p.
Fulltext: 2405.08667 - PDF; Publication - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169407
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Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology
/ Bespin, Christian (Bonn U.) ; Caicedo, Ivan (Bonn U.) ; Dingfelder, Jochen Christian (Bonn U.) ; Hemperek, Tomasz (Bonn U. ; DECTRIS Baden) ; Hirono, Toko (Bonn U. ; DESY) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Moustakas, Konstantinos (Bonn U. ; PSI, Villigen) ; Pernegger, Heinz (CERN) ; Riedler, Petra (CERN) et al.
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. [...]
arXiv:2301.13638.-
2023 - 8 p.
- Published in : PoS: Pixel2022 (2023) , pp. 080
Fulltext: document - PDF; 2301.13638 - PDF;
In : International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.080
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A Study of the Radiation Tolerance of CVD Diamond to 70 MeV Protons, Fast Neutrons and 200 MeV Pions
/ RD42 Collaboration
We measured the radiation tolerance of commercially available diamonds grown by the Chemical Vapor Deposition process by measuring the charge created by a 120 GeV hadron beam in a 50 μm pitch strip detector fabricated on each diamond sample before and after irradiation. We irradiated one group of samples with 70 MeV protons, a second group of samples with fast reactor neutrons (defined as energy greater than 0.1 MeV), and a third group of samples with 200 MeV pions, in steps, to (8.8±0.9) × 1015 protons/cm2, (1.43±0.14) × 1016 neutrons/cm2, and (6.5±1.4) × 1014 pions/cm2, respectively. [...]
2020 - 19 p.
- Published in : Sensors 20 (2020) 6648
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BDAQ53, a versatile pixel detector readout and test system for the ATLAS and CMS HL-LHC upgrades
/ Daas, Michael (Bonn U.) ; Dieter, Yannick (Bonn U.) ; Dingfelder, Jochen (Bonn U.) ; Frohne, Markus (Bonn U.) ; Giakoustidis, Georgios (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hinterkeuser, Florian (Bonn U.) ; Hügging, Fabian (Bonn U.) ; Janssen, Jens (Bonn U.) ; Krüger, Hans (Bonn U.) et al.
BDAQ53 is a readout system and verification framework for hybrid pixel detector readout chips of the RD53 family. These chips are designed for the upgrade of the inner tracking detectors of the ATLAS and CMS experiments. [...]
arXiv:2005.11225.-
2021-01-11 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 986 (2021) 164721
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Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC
/ Barbero, M. (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Dingfelder, J. (Bonn U.) ; Godiot, Stephanie (Marseille, CPPM) et al.
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. [...]
arXiv:1911.01119.-
2020-05-22 - 22 p.
- Published in : JINST
Fulltext: PDF;
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Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC
/ Hirono, Toko (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bhat, Siddharth (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Zongde (Marseille, CPPM) ; Daas, Michael (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Godiot, Stephanie (Marseille, CPPM) et al.
Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 kΩ cm2) wafers. [...]
arXiv:1803.09260.-
2019-04-21 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 87-91
Fulltext: PDF;
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.87-91
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