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Some annealing effects in proton irradiated silicon detectors / Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Petris, M (Bucharest, IFIN-HH) ; Tivarus, C (Bucharest, Nat. Inst. Mat. Sci.) ; Moll, M (Hamburg U.) ; Fretwurst, E (Hamburg U.) ; Lindstroem, G (Hamburg U.) /RD48/ROSE
Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is $\phi_{eq}=1.82 \times 10^{13} \rm{cm}^{-2}$) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. [...]
2000 - 4 p. - Published in : 10.1109/SMICND.2000.890231
In : 2000 International Semiconductor Conference : 23rd Edition, Sinaia, Romania, 10 - 14 Oct 2000, pp.259-262

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Developments for Radiation Hard Silicon Detectors by Defect Engineering : Results by the CERN RD48 (ROSE) Collaboration / ROSE Collaboration
Geneva : CERN, 2000 Fulltext: PDF; Published version from CERN: PDF;
In : 6th Workshop on Electronics for LHC Experiments, Krakow, Poland, 11 - 15 Sep 2000, pp.280-285 (CERN-2000-010)

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Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy / Pintilie, I ; Tivarus, C ; Botila, T ; Petre, D /ROSE Collaboration
Optical charging spectroscopy (OCS) is first time reported as applied to p-n junctions. The existence of one deep trapping level for electrons and two deep trapping levels for holes was put into evidence, using this method, in proton irradiated p/sup +/-n-n/sup +/ silicon structures. [...]
Geneva : CERN, 2000 - Published in : Nucl. Instrum. Methods Phys. Res., A 439 (2000) 221-7

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Investigation of trapping levels in standard, nitrogenated and oxygenated Si p-n junctions by thermally stimulated currents / Pintilie, I ; Petre, D ; Tivarus, C ; Petris, M ; Botila, T /ROSE Collaboration
The trapping levels induced in p-n Si junctions by irradiation with 24 GeV protons were investigated using thermally stimulated currents (TSC) methods in the 90-300 K temperature range. Several trapping levels, with activation energies between 0.27 and 0.57 eV, were found. [...]
Geneva : CERN, 2000 - Published in : Nucl. Instrum. Methods Phys. Res., A 439 (2000) 303-9

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