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Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation
/ Liao, C. (Hamburg U.) ; Fretwurst, E. (Hamburg U.) ; Garutti, E. (Hamburg U.) ; Schwandt, J. (Hamburg U.) ; Pintilie, I. (Bucharest, IFIN-HH) ; Nitescu, A. ; Himmerlich, A. (CERN) ; Moll, M. (CERN) ; Gurimskaya, Y. (CERN) ; Li, Z. (Ludong U., Yantai)
In this work, the effects of $^\text{60}$Co $\gamma$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI2{\mega Gy}. [...]
arXiv:2306.15336.-
2024-01-13 - 13 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1061 (2024) 169103
Fulltext: PDF;
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Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors
/ Himmerlich, Anja (CERN) ; Castello-Mor, Nuria (CERN) ; Rivera, Esteban Curras (CERN) ; Gurimskaya, Yana (CERN) ; Maulerova-Subert, Vendula (CERN ; Hamburg U.) ; Moll, Michael (CERN) ; Pintilie, Ioana (Bucharest U.) ; Fretwurst, Eckhart (Hamburg U.) ; Liao, Chuan (Hamburg U.) ; Schwandt, Jorn (Hamburg U.)
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect (ARE) a radiation-induced deactivation of active boron dopants takes place. [...]
arXiv:2209.07186.-
2022-12-22
- Published in : Nucl. Instrum. Methods Phys. Res., A 1048 (2023) 167977
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The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
/ Liao, C (Hamburg U.) ; Fretwurst, E (Hamburg U.) ; Garutti, E (Hamburg U.) ; Schwandt, J (Hamburg U.) ; Moll, M (CERN) ; Himmerlich, A (CERN) ; Gurimskaya, Y (Geneva U.) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Nitescu, A (Bucharest, Nat. Inst. Mat. Sci.) ; Li, Z (Ludong U., Yantai ; Zaozhuang U.) et al.
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV (
$E_{\text {kin}}$
) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 °C for 0–180 min) followed by isochronal annealing (for 15 min between 100 °C and 190 °C in steps of 10 °C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50-
$\Omega $
cm material after irradiation with 23-GeV protons to a fluence of
$6.91\times 10^{13}\,\,{\text {p/cm}^{2}}$
[...]
2022 - 11 p.
- Published in : IEEE Trans. Nucl. Sci. 69 (2022) 576-586
External link: preprint
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Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon
/ Makarenko, Leonid F (Belarus State U.) ; Lastovski, Stanislav B (BSU, Minsk) ; Yakushevich, Hanna S (BSU, Minsk) ; Gaubas, Eugenijus (Vilnius U.) ; Pavlov, Jevgenij (Vilnius U.) ; Kozlovski, Vitali V (St. Petersburg State U.) ; Moll, Michael (CERN) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
The influence of the injection of minority charge carriers on the formation of adivalent bistable defect (DBH) having two energy levels of $E_v + 0.44$ eV and $E_v + 0.53$ eV in its metastable configuration is investigated. Using forward cur-rent injection, the formation temperature of this defect in p-type silicon can belowered by about 50°C. [...]
2019
- Published in : Phys. Status Solidi A 216 (2019) 1900354
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Bistability of the BiOi complex and its implications on evaluating the “acceptor removal” process in p-type silicon
/ Besleaga, C. (Bucharest, Nat. Inst. Mat. Sci.) ; Kuncser, A. (Bucharest, Nat. Inst. Mat. Sci.) ; Nitescu, A. (Bucharest, Nat. Inst. Mat. Sci.) ; Kramberger, G. (Stefan Inst., Ljubljana) ; Moll, M. (CERN) ; Pintilie, I. (Bucharest, Nat. Inst. Mat. Sci.)
The dependencies of the B$_{i}$O$_{i}$ defect concentration on doping, irradiation fluence and particle type in p-type silicon diodes have been investigated. We evidenced that large data scattering occurs for fluences above $10^{12}$ 1 MeV neutrons/cm$^2$, becoming significant larger for higher fluences. [...]
arXiv:2102.06537.-
2021-11-21 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1017 (2021) 165809
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Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
/ Gurimskaya, Yana (CERN) ; Dias De Almeida, Pedro (CERN ; Cantabria U., Santander) ; Fernandez Garcia, Marcos (Cantabria U., Santander) ; Mateu Suau, Isidre (CERN) ; Moll, Michael (CERN) ; Fretwurst, Eckhart (Hamburg U.) ; Makarenko, Leonid (Belarus State U.) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. [...]
Elsevier, 2020 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162221
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162221
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Some annealing effects in proton irradiated silicon detectors
/ Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Petris, M (Bucharest, IFIN-HH) ; Tivarus, C (Bucharest, Nat. Inst. Mat. Sci.) ; Moll, M (Hamburg U.) ; Fretwurst, E (Hamburg U.) ; Lindstroem, G (Hamburg U.)
/RD48/ROSE
Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is $\phi_{eq}=1.82 \times 10^{13} \rm{cm}^{-2}$) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. [...]
2000 - 4 p.
- Published in : 10.1109/SMICND.2000.890231
In : 2000 International Semiconductor Conference : 23rd Edition, Sinaia, Romania, 10 - 14 Oct 2000, pp.259-262
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Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen
/ Makarenko, L F (Belarus State U.) ; Lastovskii, S B (Minsk, Inst. Phys.) ; Yakushevich, H S (Minsk, Inst. Phys.) ; Moll, M (CERN) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.)
Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. [...]
2018 - 7 p.
- Published in : J. Appl. Phys. 123 (2018) 161576
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