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Contactless doping characterization of ${\mathrm{Ga}_{2}\mathrm{O}_{3}}$ using acceptor Cd probes / Barbosa, Marcelo B (Porto U. ; Singapore Natl. U.) ; Correia, João Guilherme (IST/ITN, Lisbon ; CERN) ; Lorenz, Katharina (Lisbon, IST) ; Lopes, Armandina M L (Porto U.) ; Oliveira, Gonçalo N P (Porto U.) ; Fenta, Abel S (CERN ; Aveiro U. ; Leuven U.) ; Schell, Juliana (CERN ; U. Duisburg-Essen) ; Teixeira, Ricardo (IST, Lisbon (main)) ; Nogales, Emilio (Madrid U.) ; Méndez, Bianchi (Madrid U.) et al.
Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $\beta$-${\mathrm{Ga}_{2}\mathrm{O}_{3}}$ could strongly influence and contribute to the development of the next generation of power electronics. In this work, we combine easily accessible ion implantation, diffusion and nuclear transmutation methods to properly incorporate the Cd dopant into the $\beta$-${\mathrm{Ga}_{2}\mathrm{O}_{3}}$ lattice, being subsequently characterized at the atomic scale with the Perturbed Angular Correlation (PAC) technique and Density Functional Theory (DFT) simulations. [...]
2022 - 9 p. - Published in : Sci. Rep. 12 (2022) 14584 Fulltext: PDF;

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1 Nogales, E
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