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1.
Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose / Nikolaou, Aristeidis (Crete, Tech. U.) ; Chevas, Loukas (Crete, Tech. U.) ; Papadopoulou, Alexia (Crete, Tech. U.) ; Makris, Nikolaos (Crete, Tech. U.) ; Bucher, Matthias (Crete, Tech. U.) ; Borghello, Giulio (Udine U.) ; Faccio, Federico (CERN)
Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. [...]
IEEE, 2019 - 4 p. - Published in : 10.23919/MIXDES.2019.8787098
In : 26th International Conference on Mixed Design of Integrated Circuits and System, Rzeszow, Poland, 27 - 29 Jun 2019, pp.306-309
2.
Extending a 65nm CMOS process design kit for high total ionizing dose effects / Nikolaou, Aristeidis (Natl. Tech. U., Athens) ; Bucher, Matthias (Natl. Tech. U., Athens) ; Makris, Nikos (Natl. Tech. U., Athens) ; Papadopoulou, Alexia (Natl. Tech. U., Athens) ; Chevas, Loukas (Natl. Tech. U., Athens) ; Borghello, Giulio (Udine U.) ; Koch, Henri D (U. Mons) ; Kloukinas, Kostas (CERN) ; Poikela, Tuomas S (CERN) ; Faccio, Federico (CERN)
Standard CMOS Process Design Kits (PDKs) do not address degradation the technology incurs when exposed to high Total Ionizing Dose (TID). Front-end electronics for the High-Luminosity Large Hadron Collider are expected to be exposed up to ten-fold doses. [...]
2018 - 4 p. - Published in : 10.1109/MOCAST.2018.8376561
In : 7th International Conference on Modern Circuits and Systems Technologies, Thessaloniki, Greece, 7 - 9 May 2018
3.
Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS / Chevas, Loukas (Natl. Tech. U., Athens) ; Nikolaou, Aristeidis (Natl. Tech. U., Athens) ; Bucher, Matthias (Natl. Tech. U., Athens) ; Makris, Nikolaos (Natl. Tech. U., Athens) ; Papadopoulou, Alexia (Natl. Tech. U., Athens) ; Zografos, Apostolos (Natl. Tech. U., Athens) ; Borghello, Giulio (Udine U.) ; Koch, Henri D (U. Mons) ; Faccio, Federico (CERN)
Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID). [...]
2018 - 6 p. - Published in : 10.23919/MIXDES.2018.8436809
In : 25th International Conference on Mixed Design of Integrated Circuits and System, Gdynia, Poland, 21 - 23 Jun 2018, pp.313-318

See also: similar author names
66 Bucher, M
1 Bucher, M A
1 Bucher, M J G
56 Bucher, M.
7 Bucher, Manfred
15 Bucher, Martin
6 Bucher, Michelle
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