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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs / Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436 Fulltext: PDF;

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