CERN Accelerating science

CERN Document Server 11 εγγραφές βρέθηκαν  1 - 10επόμενο  μετάβαση στην εγγραφή: Η έρευνα πήρε 0.59 δευτερόλεπτα. 
1.
Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID / Termo, G (CERN ; Ecole Polytechnique, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (Ecole Polytechnique, Lausanne) ; Sallese, J M (Ecole Polytechnique, Lausanne)
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over time. As of 2014, 22 chips from 3 different fabs in 130 nm CMOS technology and 11 chips from 2 different fabs in 65 nm CMOS technology have been irradiated to ultra-high doses, ranging from 100 Mrad(SiO$_{2}$) to 1 Grad(SiO$_{2}$). [...]
2023 - 9 p. - Published in : JINST

In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01061
2.
Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator / Termo, Gennaro (CERN ; LPHE, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Kloukinas, Kostas (CERN) ; Caselle, Michele (KIT, Karlsruhe) ; Elsenhans, Alexander Friedrich (KIT, Karlsruhe) ; Ulusoy, Ahmet Cagri (KIT, Karlsruhe) ; Koukab, Adil (LPHE, Lausanne) ; Sallese, Jean-Michel (LPHE, Lausanne)
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_{2}$) with different back-gate bias configurations, from -8 V to 2 V. [...]
2024 - 7 p. - Published in : JINST 19 (2024) C03039 Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03039
3.
Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications / Termo, G (CERN ; LPHE, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (LPHE, Lausanne) ; Sallese, J M (LPHE, Lausanne)
The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluences is still unknown. [...]
2024 - 7 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1065 (2024) 169497
4.
High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities / Sriskaran, Viros (CERN) ; Alozy, Jerome (CERN) ; Ballabriga, Rafael (CERN) ; Campbell, Michael (CERN) ; Christodoulou, Pinelopi (CERN ; CTU, Prague) ; Heijne, Erik (CTU, Prague) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kugathasan, Thanushan (CERN) ; Llopart, Xavier (CERN) ; Piller, Markus (CERN ; Graz, Tech. U.) et al.
The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high-rate spectroscopic X-ray imaging using high-Z materials. It can be tiled on all 4 sides making it ideal for constructing large-area detectors with minimal dead area. [...]
arXiv:2310.10188.- 2024-02-16 - 15 p. - Published in : JINST 19 (2024) P02024 Fulltext: 2310.10188 - PDF; Publication - PDF;
5.
The Timepix4 analog front-end design: Lessons learnt on fundamental limits to noise and time resolution in highly segmented hybrid pixel detectors / Ballabriga, R (CERN) ; Alozy, J A (CERN) ; Bandi, F N (CERN) ; Blaj, G (SLAC) ; Campbell, M (CERN) ; Christodoulou, P (CERN ; IEAP CTU, Prague ; Prague, Tech. U.) ; Coco, V (CERN) ; Dorda, A (CERN ; KIT, Karlsruhe, IPE) ; Emiliani, S (CERN ; Ecole Polytechnique, Lausanne) ; Heijhoff, K (Nikhef, Amsterdam) et al.
This manuscript describes the optimization of the front-end readout electronics for high granularity hybrid pixel detectors. The theoretical study aims at minimizing the noise and jitter. [...]
2023 - 17 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1045 (2023) 167489 Fulltext: PDF;
6.
A Dual-Edge Pulsewidth Modulator for Fast Dynamic Response DC–DC Converters / Ripamonti, Giacomo (CERN) ; Saggini, Stefano (Udine U.) ; Corradini, Luca (Padua U.) ; Rizzolatti, Roberto (Udine U.) ; Faccio, Federico (CERN) ; Michelis, Stefano (CERN) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kayal, Maher (Ecole Polytechnique, Lausanne)
Voltage regulator modules are dc–dc converters that power modern microprocessors. They must exhibit a fast dynamic response, in order to achieve satisfactory regulation performance in spite of the rapid load current variations. [...]
2019 - 5 p. - Published in : IEEE Transactions on Power Electronics 34 (2019) 28-32
7.
New architecture for the analog front-end of Medipix4 / Sriskaran, V (CERN ; Ecole Polytechnique, Lausanne) ; Alozy, J (CERN) ; Ballabriga, R (CERN) ; Campbell, M (CERN) ; Egidos, N (CERN) ; Fernandez-Tenllado, J M (CERN) ; Heijne, E (CERN ; IEAP CTU, Prague) ; Kremastiotis, I (CERN) ; Koukab, A (Ecole Polytechnique, Lausanne) ; Llopart, X (CERN) et al.
The Medipix4 chip is the latest member of the family of Medipix pixel detector readout chips aimed at high rate spectroscopic X-ray imaging. Unlike its predecessors, it will be possible to tile the chip on all 4 sides permitting seamless large area coverage. [...]
2020 - Published in : Nucl. Instrum. Methods Phys. Res., A 978 (2020) 164412
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164412
8.
2.5V step-down DCDCs: a radiation-hard solution for power conversion / Ripamonti, Giacomo (Ecole Polytechnique, Lausanne ; CERN) ; Michelis, Stefano (CERN) ; Faccio, Federico (CERN) ; Saggini, Stefano (Udine U.) ; Ursino, Mario (Udine U.) ; Blanchot, Georges (CERN) ; Caregari, Stefano (Ecole Polytechnique, Lausanne ; CERN) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kayal, Maher (Ecole Polytechnique, Lausanne)
Radiation- and magnetic field tolerant DCDC converters that step down the voltage from a 2.5 V bus are needed for the High-Luminosity detectors. This work presents the developed prototypes, based on ASICs designed in a 130 nm CMOS technology. [...]
SISSA, 2020 - 5 p. - Published in : PoS TWEPP2019 (2020) 071 Fulltext: PDF;
In : TWEPP 2019 Topical Workshop on Electronics for Particle Physics, Santiago De Compostela, Spain, 2 - 6 Sep 2019, pp.071
9.
A Reliability and Efficiency Optimization System for Hard-Switching DC/DC Converters / Ripamonti, Giacomo (CERN) ; Michelis, Stefano (CERN) ; Faccio, Federico (CERN) ; Saggini, Stefano (Udine U.) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kayal, Maher (Ecole Polytechnique, Lausanne)
The Large Hadron Collider experiments at CERN will use power distribution schemes relying on integrated buck DCIDC converters. Due to the radiation-hardness requirements, the devices used for the development of such converters will have a voltage rating which is close to the converters' input voltage. [...]
2018 - 5 p. - Published in : 10.1109/NEWCAS.2018.8585694
In : 16th IEEE International New Circuits and Systems Conference, Montreal, Canada, 24 - 28 Jun 2018, pp.157-161
10.
A 2.5V Step-Down DC-DC Converter for Two-Stages Power Distribution Systems / Ripamonti, Giacomo (Ecole Polytechnique, Lausanne ; CERN) ; Michelis, Stefano (CERN) ; Faccio, Federico (CERN) ; Blanchot, Georges (CERN) ; Saggini, Stefano (U. Udine (main)) ; Rizzolatti, Roberto (U. Udine (main)) ; Ursino, Mario (U. Udine (main)) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kayal, Maher (Ecole Polytechnique, Lausanne)
A prototype second-stage buck DC-DC converter has been designed in 130 nm CMOS and fully characterized. This circuit provides up to 3 A at an adjustable output voltage of 0.6-1.5 V from an intermediate bus voltage of 2.5 V. [...]
SISSA, 2018 - 5 p. - Published in : PoS TWEPP-17 (2018) 059 Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.059

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