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CERN Document Server 19 εγγραφές βρέθηκαν  1 - 10επόμενο  μετάβαση στην εγγραφή: Η έρευνα πήρε 1.75 δευτερόλεπτα. 
1.
Latest Developments and Results of Radiation Tolerance CMOS Sensors with Small Collection Electrodes / Tortajada, I Asensi (CERN ; Valencia U.) ; Allport, P (Birmingham U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN ; Zagreb U., Phys. Dept.) ; Bespin, C (Bonn U.) ; Bhat, S (Marseille, CPPM) ; Bortoletto, D (Oxford U. ; JAI, UK) ; Breugnon, P (Marseille, CPPM) ; Buttar, C (Glasgow U.) et al.
This contribution will present the latest developments after the MALTA and Mini-MALTA sensors. It will illustrate the improvements and results of the Czochralski substrate with a bigger depletion zone to improve efficiency. [...]
2021 - 8 p. - Published in : JPS Conf. Proc. 34 (2021) 010009 Fulltext: PDF;
In : 29th International Workshop on Vertex Detectors, Virtual, Japan, 5 - 8 Oct 2020, pp.010009
2.
Conception and characterization of CMOS sensors for particle physics pixel detectors / Bhat, Siddharth
CERN-THESIS-2019-432 - 228 p.

3.
Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies / Wang, T (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Bhat, S (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Chen, Z (Marseille, CPPM) et al.
The monolithic CMOS pixel sensor for charged particle tracking has already become a mainstream technology in high energy particle physics (HEP) experiments. During the last decade, progressive improvements have been made for CMOS pixels to deal with the high-radiation and high-rate environments expected, for example, at the future High Luminosity LHC. [...]
SISSA, 2020 - 10 p. - Published in : PoS Vertex2019 (2020) 026 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.026
4.
Recent measurements on MiniMALTA, a radiation hard CMOS sensor with small collection electrodes for ATLAS / ATLAS Collaboration
The upgrade of the ATLAS tracking detector for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies.The MALTA Monolithic Active Pixel Sensor prototypes have been developed with the 180 nm TowerJazz CMOS imaging technology. This combines the engineering of high-resistivity sub- strates with on-chip high-voltage biasing to achieve a large depleted active sensor volumes, to meet the radiation hardness requirements of the outer barrel layers of the ATLAS ITK Pixel de- tector (1.5× 10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$ and 80 MRad TID). [...]
SISSA, 2020 - 11 p. - Published in : PoS Vertex2019 (2020) 020 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.020
5.
Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC / Pernegger, H. (CERN) ; Allport, P. (Birmingham U.) ; Asensi Tortajada, I. (CERN ; Valencia U.) ; Barbero, M. (Marseille, CPPM) ; Barrillon, P. (Marseille, CPPM) ; Berdalovic, I. (CERN ; Zagreb U.) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Bortoletto, D. (Oxford U.) ; Breugnon, P. (Marseille, CPPM) et al.
The upgrade of the tracking detectors for the High Luminosity-LHC (HL-LHC) requires the development of novel radiation hard silicon sensors. The development of Depleted Monolithic Active Pixel Sensors targets the replacement of hybrid pixel detectors with radiation hard monolithic CMOS sensors. [...]
2021-01-11 - 7 p. - Published in : Nucl. Instrum. Methods Res. Phys., A 986 (2021) 164381
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164381
6.
Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC / Barbero, M. (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Dingfelder, J. (Bonn U.) ; Godiot, Stephanie (Marseille, CPPM) et al.
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. [...]
arXiv:1911.01119.- 2020-05-22 - 22 p. - Published in : JINST Fulltext: PDF;
7.
DMAPS Monopix developments in large and small electrode designs / Bespin, C. (Bonn U.) ; Barbero, M. (Marseille, CPPM) ; Barrillon, P. (Marseille, CPPM) ; Berdalovic, I. (CERN) ; Bhat, S. (Marseille, CPPM) ; Breugnon, P. (Marseille, CPPM) ; Caicedo, I. (Bonn U.) ; Cardella, R. (CERN) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) et al.
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). [...]
arXiv:2006.02297.- 2020-10-21 - 7 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 978 (2020) 164460
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164460
8.
Shunt Regulator for the Serial Powering of the ATLAS CMOS Pixel Detector Modules / Habib, A (Marseille, CPPM) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Bhat, S (Marseille, CPPM) ; Kugathasan, T (CERN) ; Pangaud, P (Marseille, CPPM) ; Pernegger, H (CERN) ; Snoeys, W (CERN)
A shunt regulator was designed to meet the specifications for the serial powering of the CMOS pixel detector modules in compatibility with the next upgrade of the ATLAS detector. Serial powering greatly increases the system's power efficiency when compared to a parallel powering scheme and allows for significant material budget savings in the power cabling. [...]
2020 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 67 (2020) 455-463
9.
Development of a charge pump for sensor biasing in a Serial Powering scheme for the ATLAS pixel detector upgrade / Bhat, S (Marseille, CPPM) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Habib, A (Marseille, CPPM) ; Kugathasan, T (CERN) ; Pangaud, P (Marseille, CPPM) ; Pernegger, H (CERN) ; Rozanov, A (Marseille, CPPM) ; Snoeys, W (CERN)
CMOS monolithic pixel detector technology is one of the options considered for the outer layer of an upgraded ATLAS pixel detector in 2026. In this upgrade pixel detector modules will be powered in series by a constant current source to reduce power losses and material budget. [...]
2019 - 6 p. - Published in : JINST 14 (2019) C06014
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2018), Taipei, Taiwan, 10 - 14 Dec 2018, pp.C06014
10.
Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC / Dyndal, M. (CERN) ; Dao, V. (CERN) ; Allport, P. (Birmingham U.) ; Asensi Tortajada, I. (CERN ; Valencia U.) ; Barbero, M. (Marseille, CPPM) ; Bhat, S. (Marseille, CPPM) ; Bortoletto, D. (Oxford U.) ; Berdalovic, I. (CERN ; Zagreb U.) ; Bespin, C. (Bonn U.) ; Buttar, C. (Glasgow U.) et al.
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $\mu$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $\mu$m), and are produced on high resistivity epitaxial p-type silicon. [...]
arXiv:1909.11987.- 2020-02-10 - 17 p. - Published in : JINST 15 (2020) P02005 Fulltext: 1909.11987 - PDF; fulltext1756274 - PDF; Fulltext from publisher: PDF;

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