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1.
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RD53 pixel chips for the ATLAS and CMS Phase-2 upgrades at HL-LHC
/ Loddo, F (INFN, Bari) ; Andreazza, A (Milan U. ; INFN, Milan) ; Arteche, F (Sao Paulo, Inst. Tech. Aeronautics) ; Barbero, M B (Marseille, CPPM) ; Barillon, P (Marseille, CPPM) ; Beccherle, R (INFN, Pisa) ; Bilei, G M (INFN, Perugia ; Perugia U.) ; Bjalas, W (CERN) ; Bonaldo, S (INFN, Padua ; Padua U.) ; Bortoletto, D (Oxford U.) et al.
The Phase-2 upgrades at the High-Luminosity LHC of ATLAS and CMS experiments at CERN will require a new tracker with readout electronics operating in extremely harsh radiation environment (1 Grad), high hit rate (3.5 GHz/cm2) and high data rate readout (5 Gb/s). The RD53 collaboration is a joint effort between the ATLAS and CMS to qualify the chosen 65 nm CMOS technology in high radiation environment and develop the pixel readout chips of both experiments. [...]
FERMILAB-PUB-24-0469-PPD.-
2024 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1067 (2024) 169682
In : PSD13: The 13th International Conference on Position Sensitive Detectors, Oxford, United Kingdom, 3 - 9 Sep 2023, pp.169682
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2.
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Digital cells radiation hardness study of TPSCo 65 nm CIS technology by designing a ring oscillator
/ Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Habib, A (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM)
The CPPM group has long been designing and testing HV-CMOS blocks to complete monolithic chips in various technologies (TJ180, LF150, AMS) in the framework of several collaborations. In 2020, we participated in the MLR1 run in TowerJazz 65 nm technology through CERN’s EP-R&D; WP1.2, by designing a ring oscillator test chip. [...]
2023 - 8 p.
- Published in : JINST 18 (2023) C02063
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02063
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3.
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Design optimization of a Dual-Interlocked-Cell in 65 nm CMOS tolerant to Single Event Upsets
/ Márquez, F (U. Sevilla, Dept. Electron. Eng.) ; Palomo, F R (U. Sevilla, Dept. Electron. Eng. ; CERN) ; Muñoz, F (U. Sevilla, Dept. Electron. Eng.) ; Fougeron, D (Marseille, CPPM) ; Menouni, M (Marseille, CPPM)
Dual-Interlocked-Cell (DICE) latches are tolerant to SingleEvent Effects (SEE) by design owing to intrinsic redundancy. Innanometric technologies, as in the 65 nm scale, there are new SEEvulnerabilities associated with charge sharing between nodes. [...]
2023 - 17 p.
- Published in : JINST 18 (2023) P10023
Fulltext: PDF;
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4.
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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5.
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Single event effects testing of the RD53B chip
/ Menouni, Mohsine (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Flores, Leyre (CERN) ; Fougeron, Denis (Marseille, CPPM) ; Hemperek, Tomasz (Bonn U.) ; Joly, Eva (Marseille, CPPM) ; Lalic, Jelena (CERN) ; Strebler, Thomas (Marseille, CPPM)
The RD53 collaboration has been working since 2014 on the development of pixel chips for the CMS and ATLAS Phase 2 tracker upgrade. This work has recently led to the development of the RD53B full-scale readout chip which is using the 65nm CMOS process and containing 153600 pixels of 50 × 50 μm
$^{2}$ The RD53B chip is designed to be robust against the Single Event Effects (SEE), allowing such a complex chip to operate reliably in the hostile environment of the HL-LHC. [...]
2022 - 5 p.
- Published in : J. Phys. : Conf. Ser. 2374 (2022) 012084
Fulltext: PDF;
In : International Conference on Technology and Instrumentation in Particle Physics (TIPP 2021), Online, Canada, 24 - 29 May 2021, pp.012084
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7.
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8.
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9.
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10.
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Measurements of Single Event Upset in ATLAS IBL
/ Balbi, G. (INFN, Bologna) ; Barbero, M. (Bonn U. ; Marseille, CPPM) ; Beccherle, R. (INFN, Genoa ; INFN, Pisa) ; Bindi, M. (Gottingen U., II. Phys. Inst.) ; Breugnon, P. (Marseille, CPPM) ; Butti, P. (CERN ; SLAC) ; Cinca, D. (Dortmund U.) ; Dickinson, J. (LBL, Berkeley) ; Ferrere, D. (Geneva U.) ; Fougeron, D. (Marseille, CPPM) et al.
Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. [...]
arXiv:2004.14116.-
2020-06-17 - 30 p.
- Published in : JINST 15 (2020) P06023
Fulltext: PDF; Fulltext from publisher: PDF;
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