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1.
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Radiation hardness assurance of the CLARO8 front-end chip for the LHCb RICH detector upgrade
/ Andreotti, M (Ferrara U. ; INFN, Ferrara) ; Baldini, W (Ferrara U. ; INFN, Ferrara) ; Baszczykc, M (AGH-UST, Cracow ; Cracow, INP) ; Calabrese, R (Ferrara U. ; INFN, Ferrara) ; Candelori, A (INFN, Padua ; Padua U.) ; Carniti, P (INFN, Milan Bicocca ; Milan Bicocca U.) ; Cassina, L (Ferrara U. ; INFN, Ferrara) ; Cotta Ramusino, A (Ferrara U. ; INFN, Ferrara) ; Dorosz, P (AGH-UST, Cracow ; Cracow, INP) ; Fiorini, M (Ferrara U. ; INFN, Ferrara) et al.
The CLARO8 chip has been designed for single-photon counting in the upgraded RICH detector of the LHCb experiment at CERN. The chip has 8 channels with 5 ns peaking time and a recovery time better than 25 ns. [...]
2017 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 876 (2017) 126-128
In : 9th International Workshop on Ring Imaging Cherenkov Detectors, Bled, Slovenia, 5 - 9 Sep 2016, pp.126-128
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2.
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Lithium ion irradiation effects on epitaxial silicon detectors
/ Candelori, A (INFN, Padua ; Padua U.) ; Bisello, D (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Schramm, A (Hamburg U., Inst. Exp. Phys. II) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II) ; Wyss, J (Cassino U. ; INFN, Pisa)
Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in future very high luminosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. [...]
2004 - 7 p.
- Published in : IEEE Trans. Nucl. Sci. 51 (2004) 1766-1772
In : 13th IEEE-NPSS Real Time Conference 2003, Montreal, Canada, 18 - 23 May 2003, pp.1766-1772
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3.
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Defect characterization in silicon particle detectors irradiated with Li ions
/ Scaringella, M (INFN, Florence ; U. Florence (main)) ; Menichelli, D (INFN, Florence ; U. Florence (main)) ; Candelori, A (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Bruzzi, M (INFN, Florence ; U. Florence (main))
High Energy Physics experiments at future very high luminosity colliders will require ultra radiation-hard silicon detectors that can withstand fast hadron fluences up to $10^{16}$ cm$^{-2}$. In order to test the detectors radiation hardness in this fluence range, long irradiation times are required at the currently available proton irradiation facilities. [...]
2006 - 6 p.
- Published in : IEEE Trans. Nucl. Sci. 53 (2006) 589-594
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4.
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5.
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Analysis of the radiation hardness and charge collection efficiency of thinned silicon diodes
/ Boscardin, M (ITC-IRST, Trento) ; Bruzzi, M (INFN, Florence ; Florence U.) ; Candelori, A (INFN, Padua) ; Dalla Betta, G -F (U. Trento (main)) ; Focardi, E (INFN, Florence ; Florence U.) ; Khomenkov, V (INFN, Padua) ; Piemonte, C (ITC-IRST, Trento) ; Ronchin, S (ITC-IRST, Trento) ; Tosi, C (U. Florence (main)) ; Zorzi, N (ITC-IRST, Trento)
Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed p-n diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer back-side. [...]
2004 - 4 p.
- Published in : 10.1109/NSSMIC.2004.1462353
In : 51st Nuclear Science Symposium and Medical Imaging Conference, Rome, Italy, 16 - 22 Oct 2004
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6.
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Characterization of the 8-channel single-photon counting front-end chip for the upgrade of the LHCb RICH detectors
/ Andreotti, M (Ferrara U. ; INFN, Ferrara) ; Baldini, W (Ferrara U. ; INFN, Ferrara) ; Baszczyk, M (AGH-UST, Cracow ; Cracow, INP) ; Calabrese, R (Ferrara U. ; INFN, Ferrara) ; Candelori, A (INFN, Padua) ; Carniti, P (INFN, Milan Bicocca ; Milan Bicocca U.) ; Cassina, L (INFN, Milan Bicocca ; Milan Bicocca U.) ; Cotta Ramusino, A (Ferrara U. ; INFN, Ferrara) ; Dorosz, P (AGH-UST, Cracow ; Cracow, INP) ; Fiorini, M (Ferrara U. ; INFN, Ferrara) et al.
An 8-channel front-end ASIC has been designed in 0.35 micron CMOS technology for the upgrade of the LHCb RICH detectors at CERN. The chip allows fast single-photon counting up to 40 MHz, with a peaking time of 5 ns and a power consumption of about 1 mW per channel. [...]
2016 - 3 p.
- Published in : 10.1109/NSSMIC.2015.7581974
In : 2015 IEEE Nuclear Science Symposium and Medical Imaging Conference, San Diego, CA, USA, 31 Oct - 7 Nov 2015, pp.7581974
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7.
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Silicon detectors for the sLHC
/ Affolder, A (Liverpool U.) ; Aleev, A (Moscow, ITEP) ; Allport, P P (Liverpool U.) ; Andricek, L (Munich, Max Planck Inst.) ; Artuso, M (Syracuse U.) ; Balbuena, J P (Barcelona, Inst. Microelectron.) ; Barabash, L (Kiev, INR) ; Barber, T (Freiburg U.) ; Barcz, A (Inst. Electron Tech., Warsaw ; Warsaw, Inst. Phys. Chem.) ; Bassignana, D (Barcelona, Inst. Microelectron.) et al.
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. [...]
2011
- Published in : Nucl. Instrum. Methods Phys. Res., A 658 (2011) 11-16
In : 8th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italy, 12 - 15 Oct 2010, pp.11-16
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8.
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RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders
/ Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003.
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2010. - 73 p.
Fulltext
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9.
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Track Reconstruction with Cosmic Ray Data at the Tracker Integration Facility
/ CMS Collaboration
The subsystems of the CMS silicon strip tracker were integrated and commissioned at the Tracker Integration Facility (TIF) in the period from November 2006 to July 2007.
As part of the commissioning, large samples of cosmic ray data were recorded under various running conditions in the absence of a magnetic field. [...]
CMS-NOTE-2009-003.-
Geneva : CERN, 2008 - 36 p.
Fulltext: PDF;
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10.
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Alignment of the CMS Silicon Strip Tracker during stand-alone Commissioning
/ CMS Collaboration
The results of the CMS tracker alignment analysis are presented using the data from cosmic tracks, optical survey information, and the laser alignment system at the Tracker Integration Facility at CERN. During several months of operation in the spring and summer of 2007, about five million cosmic track events were collected with a partially active CMS Tracker. [...]
arXiv:0904.1220; CMS-NOTE-2009-002; CMS-NOTE-2009-002; FERMILAB-PUB-09-543-CMS.-
2009 - 41 p.
- Published in : JINST 4 (2009) T07001
Fulltext: arXiv:0904.1220 - PDF; jinst9_07_t07001 - PDF; External link: Preprint
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