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1.
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The Control System for the CMS Strip Tracking Detector
/ Fahrer, Manuel (CERN) ; Hartmann, Frank (CERN ; Hochschule, Eng. Econ., Karlsruhe) ; Chen, Jie (CERN) ; Dierlamm, Alexander (Hochschule, Eng. Econ., Karlsruhe) ; Frey, Martin (Hochschule, Eng. Econ., Karlsruhe) ; Masetti, Lorenzo (CERN ; Florence U.) ; Militaru, Otilia (Louvain U.) ; Shah, Yousaf (CERN) ; Stringer, Robert (CERN ; UC, Riverside (main)) ; Tsirou, Andromachi (CERN)
The Tracker of the CMS silicon strip tracking detector covers a surface of 206 m2. 9648128 channels are available on 75376 APV front-end chips on 15232 modules, built of 24328 silicon sensors. [...]
2008
- Published in : 10.1142/9789812819093_0127
In : 10th ICATPP Conference on Astroparticle, Particle, Space Physics, Detectors and Medical Physics Applications, Villa Olmo, Como, Italy, 8 - 12 Oct 2007, pp.771-775
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2.
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3.
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4.
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Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes
/ Pacifico, Nicola (CERN) ; Dolenc Kittelmann, Irena (CERN) ; Fahrer, Manuel (CERN) ; Moll, Michael (CERN) ; Militaru, Otilia (Louvain U.)
Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280@Wcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24GeV/c protons up to a total NIEL equivalent fluence of 8x10^1^5/cm^2. [...]
2011
- Published in : Nucl. Instrum. Methods Phys. Res., A 658 (2011) 55-60
In : 8th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italy, 12 - 15 Oct 2010, pp.55-60
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5.
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Silicon detectors for the sLHC
/ Affolder, A (Liverpool U.) ; Aleev, A (Moscow, ITEP) ; Allport, P P (Liverpool U.) ; Andricek, L (Munich, Max Planck Inst.) ; Artuso, M (Syracuse U.) ; Balbuena, J P (Barcelona, Inst. Microelectron.) ; Barabash, L (Kiev, INR) ; Barber, T (Freiburg U.) ; Barcz, A (Inst. Electron Tech., Warsaw ; Warsaw, Inst. Phys. Chem.) ; Bassignana, D (Barcelona, Inst. Microelectron.) et al.
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. [...]
2011
- Published in : Nucl. Instrum. Methods Phys. Res., A 658 (2011) 11-16
In : 8th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italy, 12 - 15 Oct 2010, pp.11-16
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6.
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Fulltext
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Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
/ Mekki, J (CERN ; IES, Montpellier) ; Fahrer, M (CERN) ; Glaser, M (CERN) ; Moll, M (CERN) ; Dusseau, L (Montpellier U.)
The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. [...]
2010
- Published in : IEEE Trans. Nucl. Sci. 57 (2010) 2066-2073
IEEE Published version, local copy: PDF;
In : 10th European Conference on Radiation and Its Effects on Components and Systems, Brugge, Belgium, 14 - 18 Sep 2009, pp.2066-2073
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8.
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RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders
/ Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003.
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2010. - 73 p.
Fulltext
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9.
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Track Reconstruction with Cosmic Ray Data at the Tracker Integration Facility
/ CMS Collaboration
The subsystems of the CMS silicon strip tracker were integrated and commissioned at the Tracker Integration Facility (TIF) in the period from November 2006 to July 2007.
As part of the commissioning, large samples of cosmic ray data were recorded under various running conditions in the absence of a magnetic field. [...]
CMS-NOTE-2009-003.-
Geneva : CERN, 2008 - 36 p.
Fulltext: PDF;
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10.
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Study on 150 mu m thick n- and p-type epitaxial silicon sensors irradiated with 24-GeV/c protons and 1-MeV neutrons
/ Kaska, Katharina (CERN) ; Moll, Michael (CERN) ; Fahrer, Manuel (CERN)
A study on 150@mm epitaxial (EPI) n- and p-type silicon diodes irradiated with neutrons up to 8x10^1^5n/cm^2 and protons up to 1.7x10^1^5p/cm^2 has been performed by means of CV/IV, charge collection efficiency (CCE) and transient current techniqu e (TCT) measurements. It is found that the effective space charge density increases three times faster after proton than after neutron irradiation with a slightly higher effective space charge generation rate for n-type material compared to p-type materia l. [...]
2010 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 612 (2010) 482-487
In : 7th International Conference on Radiation Effects on Semiconductor materials, Detectors and Devices, Florence, Italy, 10 - 13 Oct 2008, pp.482-487
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