CERN Accelerating science

CERN Document Server 49 records found  1 - 10nextend  jump to record: Search took 1.00 seconds. 
1.
Emission Channeling Lattice Location Studies in Semiconductors using Highly Pixellated Timepix Detectors / Bosne, Eric David
The implantation of dopant impurities in semiconductor crystals and the understanding of their lattice site location behaviour in the manufacturing process is essential for the control of their electrical, magnetic and optical properties [...]
CERN-THESIS-2020-239 - 130 p.

2.
Lattice location of impurities in silicon Carbide / Granadeiro Costa, Angelo Rafael
The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor [...]
CERN-THESIS-2018-072 - 157 p.

Fulltext
3.
Lattice location of implanted transition metals in 3C–SiC / Granadeiro Costa, Angelo Rafael (Universidade de Lisboa (PT)) ; Wahl, Ulrich (Universidade de Lisboa (PT)) ; Martins Correia, Joao (Universidade de Lisboa (PT)) ; David Bosne, Eric (Universidade de Lisboa (PT)) ; Amorim, Lígia (KU Leuven (BE)) ; Silva, Daniel (Universidade do Porto (PT)) ; Castro Ribeiro Da Silva, Manuel (Universidade de Lisboa (PT)) ; Bharuth-Ram, Krishanlal (University of Kwazulu - Natal (ZA)) ; Da Costa Pereira, Lino Miguel (KU Leuven (BE)) /EC-SLI Collaboration
We have investigated the lattice location of implanted transition metal (TM) 56Mn, 59Fe and 65Ni ions in undoped single-crystalline cubic 3C–SiC by means of the emission channeling technique using radioactive isotopes produced at the CERN-ISOLDE facility. We find that in the room temperature as-implanted state, most Mn, Fe and Ni atoms occupy carbon-coordinated tetrahedral interstitial sites (TC). [...]
CERN-OPEN-2017-022.- Lisboa : Instituto Superior Técnico, 2017 - 11 p. - Published in : J. Phys. D 50 (2017) 215101 Preprint: PDF;
4.
Local Structure and Magnetism of (Ga,Mn)As / De Lemos Lima, Tiago Abel
Throughout the years, dilute magnetic semiconductors (DMS) have emerged as promising materials for semiconductor-based spintronics [...]
CERN-THESIS-2014-387 - 112 p.

Fulltext
5.
Emission Channeling with Short-Lived Isotopes (EC-SLI) at CERN’s ISOLDE facility / EC-SLI Collaboration
We give an overview on the historical development and current program for lattice location studies at CERN’s ISOLDE facility, where the EC-SLI (Emission Channeling with Short-Lived Isotopes) collaboration maintains several setups for this type of experiments. We illustrate that the three most decisive factors for the success of the technique are access to facilities producing radioactive isotopes, position-sensitive detectors for the emitted decay particles, and reliable simulation codes which allow for quantitative analysis..
CERN-OPEN-2017-009.- Lisboa, Portugal : Instituto Superior Técnico, 2014 - 11 p. Preprint: PDF; External link: Approve this document (restricted)
In : Proceedings of the First International African Symposium on Exotic Nuclei, Cape Town, South Africa, 1 - 6 Dec 2013
6.
Influence of the doping on the lattice sites of Fe in Si / Silva, Daniel (Porto U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.) /EC-SLI Collaboration
We report on the lattice location and thermal stability of Fe in n+- and p+-type silicon. By means of emission channeling we have observed Fe on ideal substitutional sites, sites located in between bond-centered (BC) and substitutional sites, and sites displaced from tetrahedral towards anti-bonding sites. [...]
CERN-OPEN-2017-008.- Porto, Portugal : Porto U., 2014 - 4 p. - Published in : AIP Conf. Proc. 1583 (2014) 24-27 Preprint: PDF;
7.
Direct observation of the lattice sites of implanted manganese in silicon / da Silva, Daniel José ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Amorim, Lígia (Leuven U.) ; Decoster, Stefan (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisboa U.) ; Da Costa Pereira, Lino Miguel (Leuven U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.) /IS453 Collaboration ; EC-SLI Collaboration
We have studied the influence of electronic doping on the preferred lattice sites of implanted 61Co, and the related stabilities against thermal annealing, in silicon. Using the beta- emission channeling technique we have identified Co on ideal substitutional (ideal S) sites, sites displaced from bond-centered towards substitutional (near-BC) sites and sites displaced from tetrahedral interstitial towards anti-bonding (near-T) sites. [...]
CERN-OPEN-2017-007.- Porto, Portugal : Porto U., 2016 - 7 p. - Published in : Appl. Phys. A 122 (2016) 241 Preprint: PDF;
8.
Lattice location of Mg in GaN: a fresh look at doping limitations / EC-SLI Collaboration
Radioactive 27Mg (t1/2=9.5 min) was implanted into GaN of different doping types at CERN’s ISOLDE facility and its lattice site determined via beta− emission channeling. Following implantations between room temperature and 800°C, the majority of 27Mg occupies the substitutional Ga sites, however, below 350°C significant fractions were also found on interstitial positions ~0.6 Å from ideal octahedral sites. [...]
CERN-OPEN-2017-005.- Lisboa, Portugal : Lisbon, IST, 2017 - 5 p. - Published in : Phys. Rev. Lett. 118 (2017) 095501 Preprint: PDF;
9.
Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments / Silva, Daniel (Porto U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Augustyns, Valerie (Leuven U.) ; De Lemos Lima, Tiago Abel (Leuven U.) ; Granadeiro Costa, Angelo Rafael (Lisbon, IST) ; David Bosne, Eric (Lisbon, IST) ; Castro Ribeiro Da Silva, Manuel (Lisbon U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.) ; Da Costa Pereira, Lino Miguel (Leuven U.) /EC-SLI Collaboration
Although the formation of transition metal-boron pairs is currently well established in silicon processing, the geometry of these complexes is still not completely understood. We investigated the lattice location of the transition metals manganese, iron, cobalt and nickel in n- and p+-type silicon by means of electron emission channeling. [...]
CERN-OPEN-2017-004.- Leuven, Belgium : Leuven U., 2016 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., B 371 (2016) 59-62 Fulltext: PDF;
10.
Origin of the lattice sites occupied by implanted Co in Si / Silva, Daniel (Porto U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Da Costa Pereira, Lino Miguel (Leuven U.) ; Amorim, Lígia (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisbon U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.) /EC-SLI Collaboration
We have investigated the lattice location of implanted 61Co in silicon. By means of emission channeling, three different lattice sites have been identified: ideal substitutional sites, displaced bond-centered sites and displaced tetrahedral interstitial sites. [...]
CERN-OPEN-2017-002.- Porto, Portugal : Porto U., 2014 - 5 p. - Published in : Semiconductor Science and Technology: 29 (2014) , pp. 125006 Preprint: PDF;

CERN Document Server : 49 records found   1 - 10nextend  jump to record:
Interested in being notified about new results for this query?
Set up a personal email alert or subscribe to the RSS feed.
Haven't found what you were looking for? Try your search on other servers:
IS453 in Amazon
IS453 in CERN EDMS
IS453 in CERN Intranet
IS453 in CiteSeer
IS453 in Google Books
IS453 in Google Scholar
IS453 in Google Web
IS453 in IEC
IS453 in IHS
IS453 in INSPIRE
IS453 in ISO
IS453 in KISS Books/Journals
IS453 in KISS Preprints
IS453 in NEBIS
IS453 in SLAC Library Catalog