| Thesis | |
| Title | Etude des transistors MOS avancés sur Silicium sur isolant (SOI) : bruit, dégradation et environnement radiatif et applications |
| Translation of title | Study of advanced MOS transistors on silicon on insulator (SOI) : noise, degradation and radiative environment and applications |
| Author(s) | Faccio, F (Joseph Fourier U., ENSEIG/INPG) |
| Publication | Geneva : CERN, 1997 - 169. |
| Thesis note | PhD : Grenoble, INP : 1997 |
| Thesis supervisor(s) | Cristoloveanu, Sorin ; Anghinolfi, Francis |
| Note | Presented on 5 Nov 1997 |
| Subject category | Detectors and Experimental Techniques |
| Accelerator/Facility, Experiment | RD-9 |
记录创建於2002-04-05，最後更新在2019-05-31
