CERN Accelerating science

Article
Report number	arXiv:2310.19398
Title	Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer
Author(s)	Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Zambito, S. (Geneva U.) ; Nakamura, K. (KEK, Tsukuba) ; Tabuko, Y. (KEK, Tsukuba) ; Togawa, M. (KEK, Tsukuba) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Fenoglio, C.A. (Geneva U.) ; Ferrere, D. (Geneva U.) ; Gonzalez-Sevilla, S. (Geneva U.) ; Iodice, L. (Geneva U.) ; Kotitsa, R. (Geneva U. ; CERN) ; Magliocca, C. (Geneva U.) ; Nessi, M. (Geneva U. ; CERN) ; Pizarro-Medina, A. (Geneva U.) ; Sabater Iglesias, J. (Geneva U.) ; Saidi, J. (Geneva U.) ; Pinto, M. Vicente Barreto (Geneva U.) ; Iacobucci, G. (Geneva U.)
Publication	2024-01-15
Imprint	2023-10-30
Number of pages	13
In:	JINST 19 (2024) P01014
DOI	10.1088/1748-0221/19/01/P01014
Subject category	physics.ins-det ; Detectors and Experimental Techniques
Abstract	A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^∘}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2.
Copyright/License	preprint: (License: CC BY-NC-ND 4.0) publication: © 2024 The Author(s) (License: CC-BY-4.0)

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