| Article | |
| Report number | arXiv:2306.14736 |
| Title | Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon |
| Author(s) |
Liao, C. (Hamburg U.) ; Fretwurst, E. (Hamburg U.) ; Garutti, E. (Hamburg U.) ; Schwandt, J. (Hamburg U.) ; Makarenko, L. (Belarus State U.) ; Pintilie, I. (Bucharest, IFIN-HH) ; Filip, Lucian D. (Bucharest, IFIN-HH) ; Himmerlich, A. (CERN) ; Moll, M. (CERN) ; Gurimskaya, Y. (CERN) ; Li, Z. (Ludong U., Yantai) |
| Publication | 2023-07-26 |
| Imprint | 2023-06-26 |
| Number of pages | 16 |
| In: | Nucl. Instrum. Methods Phys. Res., A 1056 (2023) 168559 |
| DOI | 10.1016/j.nima.2023.168559 (publication) |
| Subject category | physics.app-ph |
| Accelerator/Facility, Experiment | RD50 |
| Project | CERN-EP-RDET |
| Abstract | This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron - interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon - interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} electrons in low resistivity silicon. Two different types of diodes manufactured on p-type epitaxial and Czochralski silicon with a resistivity of about 10 $\Omega\cdot$cm were irradiated with fluence values between \SI{1e15}{\per□\centi\meter} and \SI{6e15}{\per□\centi\meter}. Such diodes cannot be fully depleted and thus the accurate evaluation of defect concentrations and properties (activation energy, capture cross-section, concentration) from Thermally Stimulated Currents (TSC) experiments alone is not possible. In this study we demonstrate that by performing Thermally Stimulated Capacitance (TS-Cap) experiments in similar conditions to TSC measurements and developing theoretical models for simulating both types of B$_\text{i}$O$_\text{i}$ signals generated in TSC and TS-Cap measurements, accurate evaluations can be performed. The changes of the position-dependent electric field, the effective space charge density $N_\text{eff}$ profile as well as the occupation of the B$_\text{i}$O$_\text{i}$ defect during the electric field dependent electron emission, are simulated as a function of temperature. The macroscopic properties (leakage current and $N_\text{eff}$) extracted from current-voltage and capacitance-voltage measurements at \SI{20}{\celsius} are also presented and discussed |
| Copyright/License | publication: © 2023 Elsevier B.V. All rights reserved. preprint: (License: CC BY 4.0) |
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