CERN Accelerating science

002861836 001__ 2861836
002861836 003__ SzGeCERN
002861836 005__ 20240704161202.0
002861836 0247_ $$2DOI$$9IOP$$a10.1088/1748-0221/18/02/C02036
002861836 0248_ $$aoai:cds.cern.ch:2861836$$pcerncds:FULLTEXT$$pcerncds:CERN:FULLTEXT$$pcerncds:CERN
002861836 035__ $$9https://inspirehep.net/api/oai2d$$aoai:inspirehep.net:2636100$$d2023-06-12T09:46:11Z$$h2023-06-14T04:00:12Z$$mmarcxml
002861836 035__ $$9Inspire$$a2636100
002861836 041__ $$aeng
002861836 100__ $$aDorda Martin, A$$mana.dorda.martin@cern.ch$$uCERN$$uKIT, Karlsruhe, IKP$$vKIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
002861836 245__ $$9IOP$$aMeasurements of total ionizing dose effects in TPSCo 65 nm and influence of NMOS bulk bias
002861836 260__ $$c2023
002861836 300__ $$a8 p
002861836 520__ $$9IOP$$aThe CERN EP R&D; WP 1.2 aims to develop state-of-art monolithic pixel detectors using modern CMOS processes. The TPSCo 65 nm process is a suitable candidate and its radiation tolerance and sensor performance are therefore being studied. The impact of the back bias on the transistor behavior has also been measured to provide the designers with accurate models. This process shows sensitivity to radiation and degradation mechanisms similar to previously studied 65 nm CMOS technologies, strongly dependent on the geometry of the transistors. This paper presents preliminary characterization results of this technology that can serve as a guideline for designers.
002861836 540__ $$3publication$$aCC-BY-4.0$$bIOP$$uhttps://creativecommons.org/licenses/by/4.0/
002861836 542__ $$3publication$$dThe Author(s)$$g2023
002861836 65017 $$2SzGeCERN$$aDetectors and Experimental Techniques
002861836 6531_ $$9author$$aRadiation damage to detector materials (solid state)
002861836 6531_ $$9author$$aAnalogue electronic circuits
002861836 6531_ $$9author$$aRadiation-hard electronics
002861836 6531_ $$9author$$aParticle tracking detectors (Solid-state detectors)
002861836 690C_ $$aARTICLE
002861836 690C_ $$aCERN
002861836 693__ $$pCERN-EP-RDET
002861836 700__ $$aBallabriga, R$$uCERN
002861836 700__ $$aBorghello, G$$uCERN
002861836 700__ $$aCampbell, M$$uCERN
002861836 700__ $$aDeng, W$$uCERN$$uCCNU, Wuhan, Inst. Part. Phys.$$vCCNU, Hongshan, Wuhan, Hubei, China
002861836 700__ $$aHong, G H$$uCERN$$uYonsei U.$$vYonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
002861836 700__ $$aKremastiotis, I$$uCERN
002861836 700__ $$aSnoeys, W$$uCERN
002861836 700__ $$aTermo, G$$uEPFL-ISIC, Lausanne
002861836 773__ $$cC02036$$n02$$pJINST$$v18$$wC22-09-19.1$$y2023
002861836 8564_ $$82458069$$s591713$$uhttps://cds.cern.ch/record/2861836/files/document.pdf$$yFulltext
002861836 960__ $$a13
002861836 962__ $$b2825397$$kC02036$$nbergen20220919
002861836 980__ $$aARTICLE
002861836 980__ $$aConferencePaper