002861836 001__ 2861836 002861836 003__ SzGeCERN 002861836 005__ 20240704161202.0 002861836 0247_ $$2DOI$$9IOP$$a10.1088/1748-0221/18/02/C02036 002861836 0248_ $$aoai:cds.cern.ch:2861836$$pcerncds:FULLTEXT$$pcerncds:CERN:FULLTEXT$$pcerncds:CERN 002861836 035__ $$9https://inspirehep.net/api/oai2d$$aoai:inspirehep.net:2636100$$d2023-06-12T09:46:11Z$$h2023-06-14T04:00:12Z$$mmarcxml 002861836 035__ $$9Inspire$$a2636100 002861836 041__ $$aeng 002861836 100__ $$aDorda Martin, [email protected]$$uCERN$$uKIT, Karlsruhe, IKP$$vKIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany 002861836 245__ $$9IOP$$aMeasurements of total ionizing dose effects in TPSCo 65 nm and influence of NMOS bulk bias 002861836 260__ $$c2023 002861836 300__ $$a8 p 002861836 520__ $$9IOP$$aThe CERN EP R&D; WP 1.2 aims to develop state-of-art monolithic pixel detectors using modern CMOS processes. The TPSCo 65 nm process is a suitable candidate and its radiation tolerance and sensor performance are therefore being studied. The impact of the back bias on the transistor behavior has also been measured to provide the designers with accurate models. This process shows sensitivity to radiation and degradation mechanisms similar to previously studied 65 nm CMOS technologies, strongly dependent on the geometry of the transistors. This paper presents preliminary characterization results of this technology that can serve as a guideline for designers. 002861836 540__ $$3publication$$aCC-BY-4.0$$bIOP$$uhttps://creativecommons.org/licenses/by/4.0/ 002861836 542__ $$3publication$$dThe Author(s)$$g2023 002861836 65017 $$2SzGeCERN$$aDetectors and Experimental Techniques 002861836 6531_ $$9author$$aRadiation damage to detector materials (solid state) 002861836 6531_ $$9author$$aAnalogue electronic circuits 002861836 6531_ $$9author$$aRadiation-hard electronics 002861836 6531_ $$9author$$aParticle tracking detectors (Solid-state detectors) 002861836 690C_ $$aARTICLE 002861836 690C_ $$aCERN 002861836 693__ $$pCERN-EP-RDET 002861836 700__ $$aBallabriga, R$$uCERN 002861836 700__ $$aBorghello, G$$uCERN 002861836 700__ $$aCampbell, M$$uCERN 002861836 700__ $$aDeng, W$$uCERN$$uCCNU, Wuhan, Inst. Part. Phys.$$vCCNU, Hongshan, Wuhan, Hubei, China 002861836 700__ $$aHong, G H$$uCERN$$uYonsei U.$$vYonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea 002861836 700__ $$aKremastiotis, I$$uCERN 002861836 700__ $$aSnoeys, W$$uCERN 002861836 700__ $$aTermo, G$$uEPFL-ISIC, Lausanne 002861836 773__ $$cC02036$$n02$$pJINST$$v18$$wC22-09-19.1$$y2023 002861836 8564_ $$82458069$$s591713$$uhttps://cds.cern.ch/record/2861836/files/document.pdf$$yFulltext 002861836 960__ $$a13 002861836 962__ $$b2825397$$kC02036$$nbergen20220919 002861836 980__ $$aARTICLE 002861836 980__ $$aConferencePaper