| Hovedsiden > CERN Experiments > PS Experiments > n_TOF > n_TOF INTC Public Documents > Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence |
| Article | |
| Title | Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence |
| Author(s) | Ascázubi, Ricardo ; Palomo, F Rogelio (Seville U.) ; Navarrete-Larive, Victoria (Seville U.) ; Quesada, Jose Manuel (Seville U.) ; Cortés-Giraldo, Miguel Antonio (Seville U.) ; Pavón-Rodriguez, Jose Antonio (CERN) |
| Publication | 2023 |
| Number of pages | 4 |
| Published in: | 10.1109/LASCAS56464.2023.10108138 |
| Presented at | 14th Latin American Symposium on Circuits and Systems (LASCAS 2023), Quito, Ecuador, 28 Feb - 3 Mar 2023 |
| DOI | 10.1109/LASCAS56464.2023.10108138 |
| Accelerator/Facility, Experiment | CERN PS ; nTOF |
| Keywords | Radiation effects ; Semiconductor lasers ; Circuits and systems ; Energy resolution ; Estimation ; Neutrons ; Photodiodes ; n_TOF ; ultrafast laser ; neutron ; SEE ; SPA ; TPA |
| Abstract | Neutron irradiation of Silicon-PIN diodes has been performed at the n_TOF facility at CERN. Transients are collected and compared to those generated by ultrafast laser. Deposited charge is characterized as a function of the neutron energy. |
| Other source | Inspire |
| Copyright/License | © 2022-2024 IEEE |