CERN Accelerating science

Article
Report number arXiv:2004.02537
Title CLICTD: A monolithic HR-CMOS sensor chip for the CLIC silicon tracker
Author(s) Kremastiotis, I. (CERN ; KIT, Karlsruhe) ; Ballabriga, R. (CERN) ; Dort, K. (CERN ; Giessen U.) ; Egidos, N. (CERN ; Barcelona U.) ; Munker, M. (CERN)
Collaboration CLICdp Collaboration
Publication SISSA, 2020-03-11
Imprint 2020-04-06
Number of pages 5
Note 5 pages, 8 figures. Proceedings for the Topical Workshop on Electronics for Particle Physics (TWEPP 2019). 2-6 September 2019, Santiago de Compostela, Spain
In: PoS TWEPP2019 (2019) pp.039
In: TWEPP 2019 Topical Workshop on Electronics for Particle Physics, Santiago De Compostela, Spain, 2 - 6 Sep 2019, pp.039
DOI 10.22323/1.370.0039
Subject category hep-ex ; Particle Physics - Experiment ; physics.ins-det ; Detectors and Experimental Techniques
Accelerator/Facility, Experiment CLICdp
Abstract The CLIC Tracker Detector (CLICTD) is a monolithic pixelated sensor chip produced in a $180$ nm imaging CMOS process built on a high-resistivity epitaxial layer. The chip, designed in the context of the CLIC tracking detector study, comprises a matrix of ${16\times128}$ elongated pixels, each measuring ${300\times30}$ $\mu$m$^2$. To ensure prompt charge collection, every elongated pixel is segmented in eight sub-pixels, each containing a collection diode and a separate analog front-end. A simultaneous $8$-bit time measurement with $10$ ns time bins and $5$-bit energy measurement with programmable range is performed in the on-pixel digital logic. The main design aspects as well as the first results from laboratory measurements with the CLICTD chip are presented.
Copyright/License preprint: (License: CC BY-NC-SA 4.0)
publication: © 2020-2025 The Authors



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