Author(s)
| Brucoli, M (CERN) ; Danzeca, S (CERN) ; Cesari, J (Unlisted, ES) ; Brugger, M (CERN) ; Masi, A (CERN) ; Gilardoni, S (CERN) ; Pineda, A (Unlisted, ES) ; Dusseau, L (IES, Montpellier) ; Wrobel, F (IES, Montpellier) |
Abstract
| Dosimeters based on floating gate structure exhibit a linear radiation response, whose sensitivity is required to be highly stable in order to achieve an accurate dose measurement. The understanding of the mechanisms behind the sensitivity degradation is, therefore, a fundamental task in order to improve the design of these devices. In this work, the causes of the loss of sensitivity are analyzed. The role of the injection rate and the reading MOS on are discussed in detail, by analyzing the results of radiation experiments specifically performed. The study sheds light on the importance of the choice of the amplitude of the linear range and the indirect effect of high dose rates. In addition, the TID lifetime of the core floating gate sensor is pointed out. |