CERN Accelerating science

Article
Report number arXiv:1803.09260
Title Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC
Author(s) Hirono, Toko (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bhat, Siddharth (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Zongde (Marseille, CPPM) ; Daas, Michael (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Godiot, Stephanie (Marseille, CPPM) Pokaż wszystkich 20 autorów
Publication 2019-04-21
Imprint 2018-03-25
Number of pages 5
In: Nucl. Instrum. Methods Phys. Res., A 924 (2019) 87-91
In: 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.87-91
DOI 10.1016/j.nima.2018.10.059
Subject category physics.ins-det ; Detectors and Experimental Techniques ; 6: Novel high voltage and resistive CMOS sensors
Accelerator/Facility, Experiment CERN LHC ; ATLAS
Project CERN HL-LHC
Abstract Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 kΩΩ cm2cm2) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is a fully monolithic DMAPS including fast readout digital logic that handles the required hit rate. In order to yield a strong homogeneous electric field within the sensor volume, thinning of the wafer was tested. The prototypes were irradiated with X-ray up to a total ionization dose (TID) of 50 Mrad and with neutrons up to non-ionizing energy loss (NIEL) of 10151015 neq/cm2neq/cm2. The analog readout circuitry maintained its performance after TID irradiation, and the hit-efficiency at > 107107 noise occupancy was as high as 98.9 % after NIEL irradiation.
Copyright/License preprint: (License: arXiv nonexclusive-distrib 1.0)
Elsevier B.V.



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