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| Published Articles | |
| Title | Radiation hardness of different silicon materials after high-energy electron irradiation |
| Author(s) | Dittongo, S (Trieste U. ; INFN, Trieste) ; Bosisio, L (Trieste U. ; INFN, Trieste) ; Ciacchi, M (Trieste U.) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; D'Auria, G (Sincrotrone Trieste) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II) |
| Publication | 2004 |
| Imprint | 2004 |
| Number of pages | 7 |
| In: | Nucl. Instrum. Methods Phys. Res., A |
| In: | 6th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 29 Sep - 1 Oct 2003, pp.110-116 |
| DOI | 10.1016/j.nima.2004.05.057 |
| Subject category | Detectors and Experimental Techniques |
| Accelerator/Facility, Experiment | RD50 |
| Abstract | The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentration, the current related damage constant $\alpha$ and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated. |