| Article | |
| Report number | arXiv:1806.04400 |
| Title | Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade |
| Author(s) | Iguaz, F.J. (IRFU, Saclay) ; Balli, F. (IRFU, Saclay) ; Barbero, M. (Marseille, CPPM) ; Bhat, S. (Marseille, CPPM) ; Breugnon, P. (Marseille, CPPM) ; Caicedo, I. (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Godiot, S. (Marseille, CPPM) ; Guilloux, F. (IRFU, Saclay) ; Guyot, C. (IRFU, Saclay) ; Hemperek, T. (Bonn U.) ; Hirono, T. (Bonn U.) ; Krüger, H. (Bonn U.) ; Meyer, J.P. (IRFU, Saclay) ; Ouraou, A. (IRFU, Saclay) ; Pangaud, P. (Marseille, CPPM) ; Rymaszewski, P. (Bonn U.) ; Schwemling, P. (IRFU, Saclay) ; Vandenbroucke, M. (IRFU, Saclay) ; Wang, T. (Bonn U.) ; Wermes, N. (Bonn U.) |
| Publication | 2019-08-21 |
| Imprint | 2018-06-12 |
| Number of pages | 2 |
| Note | 2 pages, 3 figures, proceedings of the 14th Pisa Meeting on Advanced Detectors (PM2018), submitted to Nucl. Instr. Meth. A |
| In: | Nucl. Instrum. Methods Phys. Res., A 936 (2019) 652-653 |
| In: | Frontier Detectors for Frontier Physics: XIV Pisa Meeting on Advanced Detectors, La Biodola, Isola D'elba, Italy, 27 May - 2 Jun 2018, pp.652-653 |
| DOI | 10.1016/j.nima.2018.11.009 |
| Subject category | physics.ins-det ; Detectors and Experimental Techniques ; 6: Novel high voltage and resistive CMOS sensors |
| Accelerator/Facility, Experiment | CERN LHC ; ATLAS |
| Abstract | This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pre-amplifier and discriminator flavors with an external injection signal and an iron source (5.9\,keV x-rays). |
| Copyright/License | preprint: (License: arXiv nonexclusive-distrib 1.0) publication: Elsevier B.V. |
Corresponding record in: Inspire
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