| Accueil > Ionizing Energy Depositions After Fast Neutron Interactions in Silicon |
| Article | |
| Title | Ionizing Energy Depositions After Fast Neutron Interactions in Silicon |
| Author(s) | Bergmann, Benedikt (IEAP CTU, Prague) ; Pospisil, Stanislav (IEAP CTU, Prague) ; Caicedo, Ivan (IEAP CTU, Prague) ; Kierstead, James (Brookhaven) ; Takai, Helio (Brookhaven) ; Frojdh, Erik (CERN) |
| Publication | 2016 |
| In: | IEEE Trans. Nucl. Sci. 63 (2016) 2372-2378 |
| DOI | 10.1109/TNS.2016.2574961 |
| Abstract | In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated. The data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions. |
| Copyright/License | Publication: © 2016-2025 IEEE |