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Author(s)
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Tsiligiannis, G (Montpellier U.) ; Dilillo, L (Montpellier U.) ; Bosio, A (Montpellier U.) ; Girard, P (Montpellier U.) ; Pravossoudovitch, S (Montpellier U.) ; Todri, A (Montpellier U.) ; Virazel, A (Montpellier U.) ; Mekki, J (CERN) ; Brugger, M (CERN) ; Wrobel, F (Montpellier U.) ; Saigne, F (Montpellier U.) |
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Abstract
| Instruments operating in particle accelerators and colliders are exposed to radiations that are composed of particles of different types and energies. Several of these instruments often embed devices that are not hardened against radiation effects. Thus, there is a strong need for mon- itoring the levels of radiation inside the mixed-field radiation areas, throughout different positions. Different metrics exist for measuring the radiation damage induced to electronic devices, such as the Total Ionizing Dose (TID), the Displacement Damage (DD) and of course the fluence of parti- cles for estimating the error rates of the electronic devices among other applications. In this paper, we propose an SRAM based monitor, that is used to define the fluence of High Energy Hadrons (HEH) by detecting Single Event Upsets in the memory array. We evaluated the device by testing it inside the H4IRRAD area of CERN, a test area that reproduces the radiation conditions inside the Large Hadron Collider (LHC) tunnel and its shielded areas. By using stability estimation methods and presenting experimental data, we prove that this device is proper to be used for such a purpose |