CERN Accelerating science

Article
Report number	arXiv:1310.1902
Title	Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments
Author(s)	Fiore, S. (INFN, Rome ; ENEA, Rome) ; Abbate, C. (INFN, Rome ; Cassino U.) ; Baccaro, S. (INFN, Rome ; ENEA, Rome) ; Busatto, G. (INFN, Rome ; Cassino U.) ; Citterio, M. (INFN, Milan) ; Iannuzzo, F. (INFN, Rome ; Cassino U.) ; Lanza, A. (INFN, Pavia) ; Latorre, S. (INFN, Milan) ; Lazzaroni, M. (Milan U. ; INFN, Milan) ; Sanseverino, A. (INFN, Rome ; Cassino U.) ; Velardi, F. (INFN, Rome ; Cassino U.)
Publication	2014
Imprint	07 Oct 2013
Number of pages	5
In:	14th ICATPP Conference on Astroparticle, Particle, Space Physics and Detectors for Physics Applications, Como, Italy, 23 - 27 Sep 2013, pp.664-668
DOI	10.1142/9789814603164_0106
Subject category	hep-ex ; Particle Physics - Experiment ; physics.ins-det ; Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC
Project	CERN HL-LHC
Abstract	The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.
Copyright/License	arXiv nonexclusive-distrib. 1.0

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