Начало > Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator |
Article | |
Title | Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator |
Author(s) | Hamilton, J J ; Collart, E J H ; Bersani, M ; Giubertoni, D ; Gennaro, S ; Bennett, N S ; Cowern, N E B ; Kirkby, K J |
Publication | 2006 |
In: | AIP Conf. Proc. 866 (2006) pp.73-75 |
In: | 16th International Conference on Ion Implantation Technology, Marseilles, France, 11 - 16 Jun 2006, pp.73-75 |