CERN Accelerating science

Article
Title Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator
Author(s) Hamilton, J J ; Collart, E J H ; Bersani, M ; Giubertoni, D ; Gennaro, S ; Bennett, N S ; Cowern, N E B ; Kirkby, K J
Publication 2006
In: AIP Conf. Proc. 866 (2006) pp.73-75
In: 16th International Conference on Ion Implantation Technology, Marseilles, France, 11 - 16 Jun 2006, pp.73-75



 Записът е създаден на 2007-03-14, последна промяна на 2008-01-31