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Plasmon-driven creation of magnetic topological structures
Authors:
W. Al Saidi,
R. Sbiaa,
Y. Dusch,
N. Tiercelin
Abstract:
In the present research, we demonstrate the usage of plasmonic effects in thin film structures to control magnetic topological textures, specifically skyrmions and skyrmioniums. We investigate numerically the generation and alteration of these topological structures caused by hemisphere gold nanoparticle placed over a magnetic layer coated with a dielectric material. The electromagnetic and photot…
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In the present research, we demonstrate the usage of plasmonic effects in thin film structures to control magnetic topological textures, specifically skyrmions and skyrmioniums. We investigate numerically the generation and alteration of these topological structures caused by hemisphere gold nanoparticle placed over a magnetic layer coated with a dielectric material. The electromagnetic and photothermal models are used to clarify the processes of producing heat and absorption, and the results were implemented in micromagnetic formalism to reveal the dynamics of magnetization under various conditions. Our findings demonstrate the significance of the laser pulse duration and the contact area between nanoparticles and the underlying magnetic layer in forming topological textures. In particular, we show how to generate a single skyrmion, multiple skyrmions, and skyrmioniums, and how to dynamically transition between these states. These results highlight the possibility of manipulating magnetic textures by using plasmonic effects, which presents significant opportunities for spintronics and non-conventional computer applications.
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Submitted 12 March, 2024;
originally announced March 2024.
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Dynamics of interacting skyrmions in magnetic nano-track
Authors:
W. Al Saidi,
R. Sbiaa,
S. Bhatti,
S. N. Piramanayagam,
S. Al Risi,
O. Al Bahri
Abstract:
Controlling multiple skyrmions in nanowires is important for their implementation in racetrack memory or neuromorphic computing. Here, we report on the dynamical behavior of two interacting skyrmions in confined devices with a comparison to a single skyrmion case. Although the two skyrmions shrink near the edges and follow a helical path, their behavior is different. Because the leading skyrmion i…
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Controlling multiple skyrmions in nanowires is important for their implementation in racetrack memory or neuromorphic computing. Here, we report on the dynamical behavior of two interacting skyrmions in confined devices with a comparison to a single skyrmion case. Although the two skyrmions shrink near the edges and follow a helical path, their behavior is different. Because the leading skyrmion is between the edge and the trailing one, its size is reduced further and collapses at a lower current density compared to the single skyrmion case. For higher current density, both skyrmions are annihilated with a core-collapse mechanism for the leading one followed by a bubble-collapse mechanism for the trailing one.
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Submitted 9 February, 2023;
originally announced February 2023.
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Stabilizing skyrmions in stepped magnetic devices for multistate memory
Authors:
W. Al Saidi,
R. Sbiaa,
S. Al Risi,
F. Al Shanfari,
N. Tiercelin,
Y. Dusch
Abstract:
The dynamics and stability of magnetic skyrmions within a nano-track with multiple confinements are investigated. Firstly, the motion of a single skyrmion under spin transfer torque (STT) is studied. By accurately adjusting the current pulse magnitude and width, the study reveals the possibility to pin and stabilize the skyrmion in each confinement. Due to the Hall angle, the depining of the skyrm…
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The dynamics and stability of magnetic skyrmions within a nano-track with multiple confinements are investigated. Firstly, the motion of a single skyrmion under spin transfer torque (STT) is studied. By accurately adjusting the current pulse magnitude and width, the study reveals the possibility to pin and stabilize the skyrmion in each confinement. Due to the Hall angle, the depining of the skyrmion from the top confinement requires two pulses with adjustable time delay while a single pulse is enough to depin it for the case of bottom confinement. In the case of two skyrmions, once one is pinned in one confinement, the second one stabilizes in the nearest available empty state and no more than one skyrmion could be seen in single confinement. Finally and for further confirmation of this behavior, the motion of a large number of skyrmions is investigated under the same conditions. The results show that a multistate device could be obtained with still the existence of only one skyrmion per state. The skyrmions could be displaced along the nano-track until their annihilation at the end of the device.
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Submitted 8 February, 2023;
originally announced February 2023.
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Ultra-low Power Domain Wall Device for Spin-based Neuromorphic Computing
Authors:
Durgesh Kumar,
Chung Hong Jing,
Chan JianPeng,
Tianli Jin,
Lim Sze Ter,
Rachid Sbiaa,
S. N. Piramanayagam
Abstract:
Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to achieve low-power intelligent devices. To realize NC, researchers investigate various types of synthetic neurons and synaptic devices such as memristors and spintronic domain wall (DW) devices. In comparison, DW-based neurons and synapses have potentially higher endurance. However, for realizing low-power devices,…
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Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to achieve low-power intelligent devices. To realize NC, researchers investigate various types of synthetic neurons and synaptic devices such as memristors and spintronic domain wall (DW) devices. In comparison, DW-based neurons and synapses have potentially higher endurance. However, for realizing low-power devices, DW motion at low energies - typically below pJ/bit - are needed. Here, we demonstrate domain wall motion at current densities as low as 1E6 A/m2 by tailoring the beta-W spin Hall material. With our design, we achieve ultra-low pinning fields and current density reduction by a factor of 10000. The energy required to move the domain wall by a distance of about 20 micrometers is 0.4 fJ, which translates into energy consumption of 0.4 aJ/bit for a bit-length of 20 nm. With a meander domain wall device configuration, we have established a controlled DW motion for synapse applications and have shown the direction to make ultra-low energy spin-based neuromorphic elements.
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Submitted 24 July, 2020;
originally announced July 2020.
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Controlled spin-torque driven domain wall motion using staggered magnetic nanowires
Authors:
H. Mohammed,
S. Al Risi,
T. L. Jin3 J. Kosel,
S. N. Piramanayagam,
R. Sbiaa
Abstract:
The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of domain wall positions and their motion using spin-transfer torque are important challenges. In this paper, we demonstrate controlled domain wall motion using sp…
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The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of domain wall positions and their motion using spin-transfer torque are important challenges. In this paper, we demonstrate controlled domain wall motion using spin-transfer torque in staggered magnetic nanowires. The devices, fabricated using electron-beam lithography, were tested using a magneto-optical Kerr microscopy and electrical transport measurements. The depinning current, pinning potential and thermal stability were found to depend on the device dimensions of the staggering nanowires. Thus, the proposed staggering configuration helps to fine-tune the properties of domain wall devices for memory applications.
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Submitted 25 August, 2019;
originally announced August 2019.
