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Direction-sensitive graphene flow sensor
Authors:
P. Kaźmierczak,
J. Binder,
K. Boryczko,
T. Ciuk,
W. Strupiński,
R. Stępniewski,
A. Wysmołek
Abstract:
Graphene flow sensors hold great prospects for applications, but also encounter many difficulties, such as unwanted electrochemical phenomena, low measurable signal and limited dependence on the flow direction. This study proposes a novel approach allowing for the detection of a flow direction-dependent electric signal in aqueous solutions of salts, acids and bases. The key element in the proposed…
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Graphene flow sensors hold great prospects for applications, but also encounter many difficulties, such as unwanted electrochemical phenomena, low measurable signal and limited dependence on the flow direction. This study proposes a novel approach allowing for the detection of a flow direction-dependent electric signal in aqueous solutions of salts, acids and bases. The key element in the proposed solution is the use of a reference electrode which allows external gating of the graphene structure. Using external gating enables to enhance substantially the amplitude of the flow-generated signal. Simultaneous measurement of the reference electrode current allows us to recover a flow-direction-sensitive component of the flow-induced voltage in graphene. The obtained results are discussed in terms of the Coulomb interaction and other phenomena which can be present at the interface of graphene with the aqueous solution.
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Submitted 11 August, 2023; v1 submitted 2 August, 2023;
originally announced August 2023.
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Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
Authors:
Ekaterina Khestanova,
Tatyana Ivanova,
Roland Gillen,
Alessandro D Elia,
Oliver Nicholas Gallego Lacey,
Lena Wysocki,
Alexander Gruneis,
Vasily Kravtsov,
Wlodek Strupinski,
Janina Maultzsch,
Viktor Kandyba,
Mattia Cattelan,
Alexei Barinov,
Jose Avila,
Pavel Dudin,
Boris V. Senkovskiy
Abstract:
Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the…
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Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical doping by Cs atoms performed under ultra-high vacuum conditions. By PL measurements we identify two interlayer excitons and assign them to the momentum-indirect Q-Gamma and K-Gamma transitions. The energies of these excitons are in a very good agreement with ab initio calculations. We find that the Q-Gamma interlayer exciton is robust to the electron doping and is present at room temperature even at a high charge carrier concentration. Submicrometer angle-resolved photoemission spectroscopy (micro-ARPES) reveals charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayer without changing the band alignment. This leads to a small (10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge doping opens up an opportunity of using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers.
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Submitted 5 April, 2023;
originally announced April 2023.
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Chemical-Vapor-Deposited Graphene as a Thermally Conducting Coating
Authors:
Mauro Tortello,
Iwona Pasternak,
Klaudia Zeranska-Chudek,
Wlodek Strupinski,
Renato S. Gonnelli,
Alberto Fina
Abstract:
We performed Scanning Thermal Microscopy measurements on single layers of chemical-vapor-deposited -CVD- graphene supported by different substrates, namely SiO2, Al2O3 and PET using a double-scan technique to remove the contribution to the heat flux through the air and the cantilever. Then, by adopting a simple lumped-elements model, we developed a new method that allows determining, through a mul…
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We performed Scanning Thermal Microscopy measurements on single layers of chemical-vapor-deposited -CVD- graphene supported by different substrates, namely SiO2, Al2O3 and PET using a double-scan technique to remove the contribution to the heat flux through the air and the cantilever. Then, by adopting a simple lumped-elements model, we developed a new method that allows determining, through a multi-step numerical analysis, the equivalent thermal properties of thermally conductive coatings of nanometric thickness. In this specific case we found that our CVD graphene is thermally equivalent, for heat injection perpendicular to the graphene planes, to a coating material of conductivity Keff=2.5+-0.3 mK and thickness teff=3.5+-0.3 nm in perfect contact with the substrate. For the SiO2 substrate, we also measured stacks made of 2 and 4 CVD monolayers and we found that the effective thermal conductivity increases with increasing number of layers and, with a technologically achievable number of layers, is expected to be comparable to that of one order of magnitude-thicker metallic thin films. This study provides a powerful method for characterizing the thermal properties of graphene in view of several thermal management applications.
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Submitted 30 October, 2019;
originally announced October 2019.
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Structural characterization of as-grown and quasi-free standing graphene layers on SiC
Authors:
R. A. Bueno,
I. Palacio,
C. Munuera,
L. Aballe,
M. Foerster,
W. Strupinski,
M. Garcia-Hernandez,
J. A. Martin-Gago,
M. F. Lopez
Abstract:
We report on a comparative structural characterization of two types of high quality epitaxial graphene layers grown by CVD on 4H-SiC(0001). The layers under study are a single layer graphene on top of a buffer layer and a quasi-free-standing graphene obtained by intercalation of hydrogen underneath the buffer layer. We determine the morphology and structure of both layers by different complementar…
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We report on a comparative structural characterization of two types of high quality epitaxial graphene layers grown by CVD on 4H-SiC(0001). The layers under study are a single layer graphene on top of a buffer layer and a quasi-free-standing graphene obtained by intercalation of hydrogen underneath the buffer layer. We determine the morphology and structure of both layers by different complementary in-situ and ex-situ surface techniques. We found the existence of large islands in both samples but with different size distribution. Photoemission electron microscopy (PEEM) measurements were performed to get information about the chemical environment of the different regions. The study reveals that monolayer graphene prevails in most of the surface terraces, while a bilayer and trilayer graphene presence is observed at the steps, stripes along steps and islands.
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Submitted 10 April, 2019; v1 submitted 28 February, 2019;
originally announced February 2019.
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Wide-Band Nano-Imaging of Plasmon Dispersion and Hotspots in Quasi-Free-Standing Epitaxial Graphene
Authors:
William S. Hart,
Vishal Panchal,
Christos Melios,
Włodek Strupiński,
Olga Kazakova,
Chris C. Phillips
Abstract:
We report observation of graphene plasmon interference fringes across a wide spectral range using a scattering scanning near-field optical microscope (s-SNOM) that employs a widely tunable bank of quantum cascade lasers. We use plasmon interference to measure the dispersion curve of graphene plasmons over more than an order of magnitude of plasmon wavelength, from $λ_{sp}$ ~140 to ~1700 nm, and ex…
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We report observation of graphene plasmon interference fringes across a wide spectral range using a scattering scanning near-field optical microscope (s-SNOM) that employs a widely tunable bank of quantum cascade lasers. We use plasmon interference to measure the dispersion curve of graphene plasmons over more than an order of magnitude of plasmon wavelength, from $λ_{sp}$ ~140 to ~1700 nm, and extract the electron Fermi energy of 298$\pm$4 meV for hydrogen-intercalated single layer epitaxial graphene on SiC. Furthermore, we demonstrate the appearance of wavelength tuneable graphene plasmon reflection "hotspots" at single-layer/bi-layer interfaces. This work demonstrates the capability of wide-band nano-imaging to precisely measure the electrical properties of graphene and spatially control plasmon reflection focusing.
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Submitted 25 May, 2018;
originally announced May 2018.
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Tuning epitaxial graphene sensitivity to water by hydrogen intercalation
Authors:
Christos Melios,
Michael Winters,
Wlodek Strupinski,
Vishal Panchal,
Cristina E. Giusca,
K. D. G. Imalka Jayawardena,
Niklas Rorsman,
S. Ravi P. Silva,
Olga Kazakova
Abstract:
The effects of humidity on the electronic properties of quasi-free standing one layer graphene (QFS 1LG) are investigated via simultaneous magneto-transport in the van der Pauw geometry and local work function measurements in a controlled environment. QFS 1LG on 4H-SiC(0001) is obtained by hydrogen intercalation of the interfacial layer. In this system, the carrier concentration experiences a two-…
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The effects of humidity on the electronic properties of quasi-free standing one layer graphene (QFS 1LG) are investigated via simultaneous magneto-transport in the van der Pauw geometry and local work function measurements in a controlled environment. QFS 1LG on 4H-SiC(0001) is obtained by hydrogen intercalation of the interfacial layer. In this system, the carrier concentration experiences a two-fold increase in sensitivity to changes in relative humidity as compared to the as-grown epitaxial graphene. This enhanced sensitivity to water is attributed to the lowering of the hydrophobicity of QFS 1LG, which results from spontaneous polarization of 4H-SiC(0001) strongly influencing the graphene. Moreover, the superior carrier mobility of the QFS 1LG system is retained even at the highest humidity. The work function maps constructed from Kelvin probe force microscopy also revealed higher sensitivity to water for 1LG compared to 2LG in both QFS 1LG and as-grown systems. These results point to a new field of applications for QFS 1LG, i.e., as humidity sensors, and the corresponding need for metrology in calibration of graphene-based sensors and devices.
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Submitted 26 April, 2018; v1 submitted 25 April, 2018;
originally announced April 2018.
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Surface and interface structure of quasi-free standing graphene on SiC
Authors:
Christos Melios,
Steve Spencer,
Alex Shard,
Wlodek Strupinski,
S. Ravi P. Silva,
Olga Kazakova
Abstract:
We perform local nanoscale studies of the surface and interface structure of hydrogen intercalated graphene on 4H-SiC(1000). In particular, we show that intercalation of the interfacial layer results in the formation of quasi-free standing one layer graphene (QFS 1LG) with change in the carrier type from n- to p-type, accompanied by a more than four times increase in carrier mobility. We demonstra…
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We perform local nanoscale studies of the surface and interface structure of hydrogen intercalated graphene on 4H-SiC(1000). In particular, we show that intercalation of the interfacial layer results in the formation of quasi-free standing one layer graphene (QFS 1LG) with change in the carrier type from n- to p-type, accompanied by a more than four times increase in carrier mobility. We demonstrate that surface enhanced Raman scattering (SERS) reveals the enhanced Raman signal of Si-H stretching mode, which is the direct proof of successful intercalation. Furthermore, the appearance of D, D+D' as well as C-H peaks for the quasi-free standing two layer graphene (QFS 2LG) suggests that hydrogen also penetrates in between the graphene layers to locally form C-H sp3 defects that decrease the mobility. Thus, SERS provides a quick and reliable technique to investigate the interface structure of graphene which is in general not accessible by other conventional methods. Our findings are further confirmed by Kelvin probe force microscopy and X-ray photoelectron spectroscopy.
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Submitted 26 April, 2018; v1 submitted 25 April, 2018;
originally announced April 2018.
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Laser-controlled field effect in graphene/hexagonal boron nitride heterostructures
Authors:
Igor Wlasny,
Roman Stepniewski,
Zbigniew Klusek,
Wlodzimierz Strupinski,
Andrzej Wysmolek
Abstract:
The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser light induced modifications are found to cause no structural changes. However, they have impact on Raman spectra and local charge state of the material. They ar…
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The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser light induced modifications are found to cause no structural changes. However, they have impact on Raman spectra and local charge state of the material. They are also shown to be stable in time and during electrical grounding of the sample. The mechanism of photoionization of deep defects present in h-BN is proposed to explain the observed phenomenon. The discussed effect opens up new method of nanostructurization of h-BN based planar heterostructures.
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Submitted 16 May, 2018; v1 submitted 1 March, 2018;
originally announced March 2018.
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Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
Authors:
Grzegorz Lupina,
Julia Kitzmann,
Ioan Costina,
Mindaugas Lukosius,
Christian Wenger,
Andre Wolff,
Sam Vaziri,
Mikael Ostling,
Iwona Pasternak,
Aleksandra Krajewska,
Wlodek Strupinski,
Satender Kataria,
Amit Gahoi,
Max C. Lemme,
Guenther Ruhl,
Guenther Zoth,
Oliver Luxenhofer,
Wolfgang Mehr
Abstract:
Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etch and electrochemical delamination methods with…
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Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etch and electrochemical delamination methods with respect to residual sub-monolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection x-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10$^{13}$ atoms/cm$^{2}$. These metal impurities appear to be partly mobile upon thermal treatment as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics these results reveal that further progress in synthesis, handling, and cleaning of graphene is required on the way to its advanced electronic and optoelectronic applications.
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Submitted 5 May, 2015;
originally announced May 2015.
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In-situ Raman Spectroscopy of the Graphene / Water Interface of a Solution-Gated Field Effect Transistor: Electron-Phonon Coupling and Spectroelectrochemistry
Authors:
J. Binder,
J. M. Urban,
R. Stepniewski,
W. Strupinski,
A. Wysmolek
Abstract:
We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the gate voltage, we observed Raman signatures related to the resonant electron-phonon coupling. An analysis of these Raman bands enabled the extraction of the geometr…
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We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the gate voltage, we observed Raman signatures related to the resonant electron-phonon coupling. An analysis of these Raman bands enabled the extraction of the geometrical capacitance of the system and an accurate calculation of the Fermi levels for bilayer graphene. An intentional application of higher gate voltages allowed us to trigger electrochemical reactions, which we followed in-situ by Raman spectroscopy. The reactions showed a partially reversible character, as indicated by an emergence / disappearance of peaks assigned to C-H and Si-H vibration modes as well as an increase / decrease of the defect-related Raman D band intensity. Our setup provides a highly interesting platform for future spectroelectrochemical research on electrically induced sorption processes of graphene on the micrometer scale.
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Submitted 14 August, 2015; v1 submitted 18 November, 2014;
originally announced November 2014.
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Observation of anomalous Hanle spin precession lineshapes resulting from interaction with localized states
Authors:
J. J. van den Berg,
B. J. van Wees,
W. Strupinski
Abstract:
It has been shown recently that in spin precession experiments, the interaction of spins with localized states can change the response to a magnetic field, leading to a modified, effective spin relaxation time and precession frequency. Here, we show that also the shape of the Hanle curve can change, so that it cannot be fitted with the solutions of the conventional Bloch equation. We present exper…
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It has been shown recently that in spin precession experiments, the interaction of spins with localized states can change the response to a magnetic field, leading to a modified, effective spin relaxation time and precession frequency. Here, we show that also the shape of the Hanle curve can change, so that it cannot be fitted with the solutions of the conventional Bloch equation. We present experimental data that shows such an effect arising at low temperatures in epitaxial graphene on silicon carbide with localized states in the carbon buffer layer. We compare the strength of the effect between materials with different growth methods, epitaxial growth by sublimation and by chemical vapor deposition. The presented analysis gives information about the density of localized states and their coupling to the graphene states, which is inaccessible by charge transport measurements and can be applied to any spin transport channel that is coupled to localized states.
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Submitted 5 November, 2014;
originally announced November 2014.
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Magnetotransport in graphene on silicon side of SiC
Authors:
P. Vasek,
L. Smrcka,
P. Svoboda,
V. Jurka,
M. Orlita,
D. K. Maude,
W. Strupinski,
R. Stepniewski,
R. Yakimova
Abstract:
We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of…
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We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before.
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Submitted 24 April, 2013; v1 submitted 2 October, 2012;
originally announced October 2012.
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Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies
Authors:
Jolanta Borysiuk,
Jakub Sołtys,
Rafal Bożek,
Jacek Piechota,
Stanislaw Krukowski,
Wlodzimierz Strupinski,
Jacek M. Baranowski,
Roman Stepniewski
Abstract:
Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate,…
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Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(000) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600°C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face. At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp2 bonded configuration, liberating Si atoms in barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers. These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surface
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Submitted 30 September, 2011;
originally announced September 2011.
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Carrier scattering from dynamical magneto-conductivity in quasi-neutral epitaxial graphene
Authors:
M. Orlita,
C. Faugeras,
R. Grill,
A. Wysmolek,
W. Strupinski,
C. Berger,
W. A. de Heer,
G. Martinez,
M. Potemski
Abstract:
The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magne…
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The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magnetic field. Insights are given about possible scattering mechanism and carrier mobilities in the graphene system investigated.
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Submitted 20 October, 2011; v1 submitted 4 January, 2011;
originally announced January 2011.
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Properties of metal-insulator transition and electron spin relaxation in GaN:Si
Authors:
A. Wolos,
Z. Wilamowski,
M. Piersa,
W. Strupinski,
B. Lucznik,
I. Grzegory,
S. Porowski
Abstract:
We investigate properties of doping-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the doping concentration, Si-related bands are formed below the bottom of the GaN conduction band. The D0 band of single-occupied Si donor sites is centered 27 meV below the bottom of the GaN conduction band, the D- band of double-occupied Si states…
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We investigate properties of doping-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the doping concentration, Si-related bands are formed below the bottom of the GaN conduction band. The D0 band of single-occupied Si donor sites is centered 27 meV below the bottom of the GaN conduction band, the D- band of double-occupied Si states at 2.7 meV below the bottom of the GaN conduction band. Strong damping of the magnetic moment occurs due to filling of the D- states at Si concentrations approaching the metal-insulator transition. Simultaneously, shortening of electron spin relaxation time due to limited electron lifetime in the single-occupied D0 band is observed. The metal-insulator transition occurs at the critical concentration of uncompensated donors equal to about 1.6 * 10^18 cm^-3. Electronic states in metallic samples beyond the metal-insulator transition demonstrate non-magnetic character of double-occupied states.
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Submitted 22 December, 2010;
originally announced December 2010.
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Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene
Authors:
M. Orlita,
C. Faugeras,
J. Borysiuk,
J. M. Baranowski,
W. Strupinski,
M. Sprinkle,
C. Berger,
W. A. de Heer,
D. M. Basko,
G. Martinez,
M. Potemski
Abstract:
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.
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Submitted 23 January, 2011; v1 submitted 8 October, 2010;
originally announced October 2010.
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Quasi-classical cyclotron resonance of Dirac fermions in highly doped graphene
Authors:
A. M. Witowski,
M. Orlita,
R. Stepniewski,
A. Wysmolek,
J. M. Baranowski,
W. Strupinski,
C. Faugeras,
G. Martinez,
M. Potemski
Abstract:
Cyclotron resonance in highly doped graphene has been explored using infrared magnetotransmission. Contrary to previous work, which only focused on the magneto-optical properties of graphene in the quantum regime, here we study the quasi-classical response of this system. We show that it has a character of classical cyclotron resonance, with an energy which is linear in the applied magnetic field…
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Cyclotron resonance in highly doped graphene has been explored using infrared magnetotransmission. Contrary to previous work, which only focused on the magneto-optical properties of graphene in the quantum regime, here we study the quasi-classical response of this system. We show that it has a character of classical cyclotron resonance, with an energy which is linear in the applied magnetic field and with an effective cyclotron mass defined by the position of the Fermi level m = E_F/v_F^2.
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Submitted 15 September, 2010; v1 submitted 23 July, 2010;
originally announced July 2010.
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Fluorographene: Two Dimensional Counterpart of Teflon
Authors:
R. R. Nair,
W. C. Ren,
R. Jalil,
I. Riaz,
V. G. Kravets,
L. Britnell,
P. Blake,
F. Schedin,
A. S. Mayorov,
S. Yuan,
M. I. Katsnelson,
H. M. Cheng,
W. Strupinski,
L. G. Bulusheva,
A. V. Okotrub,
I. V. Grigorieva,
A. N. Grigorenko,
K. S. Novoselov,
A. K. Geim
Abstract:
We report a stoichiometric derivative of graphene with a fluorine atom attached to each carbon. Raman, optical, structural, micromechanical and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity >10^12 Ohm per square) with an optical gap of 3 eV. It inherits the mec…
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We report a stoichiometric derivative of graphene with a fluorine atom attached to each carbon. Raman, optical, structural, micromechanical and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity >10^12 Ohm per square) with an optical gap of 3 eV. It inherits the mechanical strength of graphene, exhibiting Young's modulus of 100 N/m and sustaining strains of 15%. Fluorographene is inert and stable up to 400C even in air, similar to Teflon.
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Submitted 28 September, 2010; v1 submitted 15 June, 2010;
originally announced June 2010.
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Magnetospectroscopy of symmetric and anti-symmetric states in double quantum wells
Authors:
M. Marchewka,
E. M. Sheregii,
I. Tralle,
D. Ploch,
G. Tomaka,
M. Furdak,
A. Kolek,
A. Stadler,
K. Mleczko,
D. Zak,
W. Strupinski,
A. Jasik,
R. Jakiela
Abstract:
The experimental results obtained for the magneto-transport in the InGaAs/InAlAs double quantum wells (DQW) structures of two different shapes of wells are reported. The beating-effect occurred in the Shubnikov-de Haas (SdH) oscillations was observed for both types of the structures at low temperatures in the parallel transport when magnetic field was perpendicular to the layers. An approach to…
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The experimental results obtained for the magneto-transport in the InGaAs/InAlAs double quantum wells (DQW) structures of two different shapes of wells are reported. The beating-effect occurred in the Shubnikov-de Haas (SdH) oscillations was observed for both types of the structures at low temperatures in the parallel transport when magnetic field was perpendicular to the layers. An approach to the calculation of the Landau levels energies for DQW structures was developed and then applied to the analysis and interpretation of the experimental data related to the beating-effect. We also argue that in order to account for the observed magneto-transport phenomena (SdH and Integer Quantum Hall effect), one should introduce two different quasi-Fermi levels characterizing two electron sub-systems regarding symmetry properties of their states, symmetric and anti-symmetric ones which are not mixed by electron-electron interaction.
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Submitted 12 July, 2007;
originally announced July 2007.
