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Interfacial Fe segregation and its influence on magnetic properties of CoFeB/MgFeO multilayers
Authors:
Tomohiro Ichinose,
Tatsuya Yamamoto,
Takayuki Nozaki,
Kay Yakushiji,
Shingo Tamaru,
Shinji Yuasa
Abstract:
We investigated the effect of Fe segregated from partially Fe-substituted MgO (MgFeO) on the magnetic properties of CoFeB/MgFeO multilayers. X-ray photoelectron spectroscopy (XPS) as well as magnetic measurements revealed that the segregated Fe was reduced to metal and exhibited ferromagnetism at the CoFeB/MgFeO interface. The CoFeB/MgFeO multilayer showed more than 2-fold enhancement in perpendic…
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We investigated the effect of Fe segregated from partially Fe-substituted MgO (MgFeO) on the magnetic properties of CoFeB/MgFeO multilayers. X-ray photoelectron spectroscopy (XPS) as well as magnetic measurements revealed that the segregated Fe was reduced to metal and exhibited ferromagnetism at the CoFeB/MgFeO interface. The CoFeB/MgFeO multilayer showed more than 2-fold enhancement in perpendicular magnetic anisotropy (PMA) energy density compared with a standard CoFeB/MgO multilayer. The PMA energy density was further enhanced by inserting an ultrathin MgO layer in between CoFeB and MgFeO layers. Ferromagnetic resonance measurement also revealed a remarkable reduction of magnetic damping in the CoFeB/MgFeO multilayers.
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Submitted 17 August, 2023;
originally announced August 2023.
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Ferroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories
Authors:
Mohamed Belmoubarik,
Muftah Al-Mahdawi,
George Machado Jr.,
Tomohiro Nozaki,
Cláudia Coelho,
Masashi Sahashi,
Weng Kung Peng
Abstract:
Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied several times in perovskite and complicated materials systems. It was interpreted as the modulation of carrier transport by polarization control over Schottky barr…
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Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied several times in perovskite and complicated materials systems. It was interpreted as the modulation of carrier transport by polarization control over Schottky barriers. Here, we experimentally report the isothermal resistive switching across a CoPt/MgZnO Schottky barrier using a simple binary semiconductor. The crystal and texture properties showed high-quality and single-crystal Co$_{0.30}$Pt$_{0.70}$/Mg$_{0.20}$Zn$_{0.80}$O hetero-junctions. The resistive switching was examined by an electric-field cooling method that exhibited a ferroelectric T$_C$ of MgZnO close to the bulk value. The resistive switching across CoPt/MgZnO Schottky barrier was accompanied by a change in the Schottky barrier height of 26.5 meV due to an interfacial charge increase and/or orbital hybridization induced reversal of MgZnO polarization. The magnitude of the reversed polarization was estimated to be a reasonable value of 3.0 (8.25) $μ$ C/cm$^2$ at 300 K (2 K). These findings demonstrated the utilities of CoPt/MgZnO interface as a potential candidate for ferroelectric memristors and can be extended to probe the resistive switching of other hexagonal ferroelectric materials.
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Submitted 1 March, 2024; v1 submitted 25 May, 2023;
originally announced May 2023.
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Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers
Authors:
Tomohiro Ichinose,
Tatsuya Yamamoto,
Takayuki Nozaki,
Kay Yakushiji,
Shingo Tamaru,
Makoto Konoto,
Shinji Yuasa
Abstract:
We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic and magneto-transport properties of the MTJs were investigated in detail. When CoFeB was deposited at 100 K, the MTJs exhibited a perpend…
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We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic and magneto-transport properties of the MTJs were investigated in detail. When CoFeB was deposited at 100 K, the MTJs exhibited a perpendicular magnetic anisotropy (PMA) of 214 uJ/m2 and a voltage-controlled magnetic anisotropy (VCMA) coefficient of -45 fJ/Vm, corresponding to 1.4- and 1.7-fold enhancements in PMA and VCMA, respectively, compared to the case of room-temperature deposition of CoFeB. The improvement in the MTJ properties was not simply due to the morphology of the MTJ films. The interface-sensitive magneto-transport properties indicated that interfacial qualities such as intermixing and oxidation states at the MgO/CoFeB interfaces were improved by the cryogenic temperature deposition. Cryogenic-temperature sputtering deposition is expected to be a standard manufacturing process for next-generation magnetoresistive random-access memory.
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Submitted 12 January, 2023;
originally announced January 2023.
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The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface
Authors:
Shoya Sakamoto,
Takayuki Nozaki,
Shinji Yuasa,
Kenta Amemiya,
Shinji Miwa
Abstract:
The Fe/MgO interface is an essential ingredient in spintronics as it shows giant tunneling magnetoresistance and strong perpendicular magnetic anisotropy (PMA). A recent study demonstrated that the insertion of an ultra-thin LiF layer between the Fe and MgO layers enhances PMA significantly. In this study, we perform x-ray magnetic circular dichroism measurements on Fe/LiF/MgO multilayers to revea…
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The Fe/MgO interface is an essential ingredient in spintronics as it shows giant tunneling magnetoresistance and strong perpendicular magnetic anisotropy (PMA). A recent study demonstrated that the insertion of an ultra-thin LiF layer between the Fe and MgO layers enhances PMA significantly. In this study, we perform x-ray magnetic circular dichroism measurements on Fe/LiF/MgO multilayers to reveal the origin of the PMA enhancement. We find that the LiF insertion increases the orbital-magnetic-moment anisotropy and thus the magnetic anisotropy energy. We attribute the origin of this orbital-magnetic-moment-anisotropy enhancement to the stronger electron localization and electron-electron correlation or the better interface quality with fewer defects.
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Submitted 15 August, 2022;
originally announced August 2022.
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Electric-Field-Induced Coherent Control of Nitrogen Vacancy Centers
Authors:
Gerald Q. Yan,
Senlei Li,
Tatsuya Yamamoto,
Mengqi Huang,
Nathan McLaughlin,
Takayuki Nozaki,
Hailong Wang,
Shinji Yuasa,
Chunhui Rita Du
Abstract:
Enabling scalable and energy-efficient control of spin defects in solid-state media is desirable for realizing transformative quantum information technologies. Exploiting voltage-controlled magnetic anisotropy, we report coherent manipulation of nitrogen-vacancy (NV) centers by the spatially confined magnetic stray fields produced by a proximate resonant magnetic tunnel junction (MTJ). Remarkably,…
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Enabling scalable and energy-efficient control of spin defects in solid-state media is desirable for realizing transformative quantum information technologies. Exploiting voltage-controlled magnetic anisotropy, we report coherent manipulation of nitrogen-vacancy (NV) centers by the spatially confined magnetic stray fields produced by a proximate resonant magnetic tunnel junction (MTJ). Remarkably, the coherent coupling between NV centers and the MTJ can be systematically controlled by a DC bias voltage, allowing for appreciable electrical tunability in the presented hybrid system. In comparison with current state-of-the-art techniques, the demonstrated NV-based quantum operational platform exhibits significant advantages in scalability, device compatibility, and energy-efficiency, further expanding the role of NV centers in a broad range of quantum computing, sensing, and communications applications.
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Submitted 21 June, 2022;
originally announced June 2022.
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Exchange-biased quantum anomalous Hall effect
Authors:
Peng Zhang,
Purnima P. Balakrishnan,
Christopher Eckberg,
Peng Deng,
Tomohiro Nozaki,
Sukong Chong,
Patrick Quarterman,
Megan E. Holtz,
Brian B. Maranville,
Lei Pan,
Eve Emmanouilidou,
Ni Ni,
Masashi Sahashi,
Alexander Grutter,
Kang L. Wang
Abstract:
The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, we realized the QAH effect in the magnetic topological insulator Cr-doped (Bi,S…
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The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, we realized the QAH effect in the magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr2O3. Through polarized neutron reflectometry (PNR), we find a strong exchange coupling between CBST and Al-Cr2O3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. The interfacial coupling results in an exchange-biased QAH effect. We further demonstrate that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr2O3 layer. Our work demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.
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Submitted 7 May, 2022;
originally announced May 2022.
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Quadratic magnetoelectric effect during field cooling in sputter grown Cr$_2$O$_3$ films
Authors:
Muftah Al-Mahdawi,
Tomohiro Nozaki,
Mikihiko Oogane,
Hiroshi Imamura,
Yasuo Ando,
Masashi Sahashi
Abstract:
Cr$_2$O$_3$ is the archetypal magnetoelectric (ME) material, which has a linear coupling between electric and magnetic polarizations. Quadratic ME effects are forbidden for the magnetic point group of Cr$_2$O$_3$, due to space-time inversion symmetry. In Cr$_2$O$_3$ films grown by sputtering, we find a signature of a quadratic ME effect that is not found in bulk single crystals. We use Raman spect…
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Cr$_2$O$_3$ is the archetypal magnetoelectric (ME) material, which has a linear coupling between electric and magnetic polarizations. Quadratic ME effects are forbidden for the magnetic point group of Cr$_2$O$_3$, due to space-time inversion symmetry. In Cr$_2$O$_3$ films grown by sputtering, we find a signature of a quadratic ME effect that is not found in bulk single crystals. We use Raman spectroscopy and magetization measurements to deduce the removal of space-time symmetry, and corroborate the emergence of the quadratic ME effect. We propose that meta-stable site-selective trace dopants remove the space, time, and space-time inversion symmetries from the original magnetic point group of bulk Cr$_2$O$_3$. We include the quadratic ME effect in a model describing the switching process during ME field cooling, and estimate the effective quadratic susceptibility value. The quadratic magnetoelectric effect in a uniaxial antiferromagnet is promising for multifunctional antiferromagnetic and magnetoelectric devices that can incorporate optical, strain-induced, and multiferroic effects.
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Submitted 15 September, 2021;
originally announced September 2021.
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Organization of fast and slow chromatin revealed by single-nucleosome dynamics
Authors:
S. S. Ashwin,
Tadasu Nozaki,
Kazuhiro Maeshima,
Masaki Sasai
Abstract:
Understanding chromatin organization and dynamics is important since they crucially affect DNA functions. In this study, we investigate chromatin dynamics by statistically analyzing single-nucleosome movement in living human cells. Bi-modal nature of the mean squared displacement distribution of nucleosomes allows for a natural categorization of the nucleosomes as fast and slow. Analyses of the nu…
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Understanding chromatin organization and dynamics is important since they crucially affect DNA functions. In this study, we investigate chromatin dynamics by statistically analyzing single-nucleosome movement in living human cells. Bi-modal nature of the mean squared displacement distribution of nucleosomes allows for a natural categorization of the nucleosomes as fast and slow. Analyses of the nucleosome-nucleosome correlation functions within these categories along with the density of vibrational modes show that the nucleosomes form dynamically correlated fluid regions, i.e., dynamic domains of fast and slow nucleosomes. Perturbed nucleosome dynamics by global histone acetylation or cohesin inactivation indicate that nucleosome-nucleosome interactions along with tethering of chromatin chains organize nucleosomes into fast and slow dynamic domains. A simple polymer model is introduced, which shows the consistency of this dynamic domain picture. Statistical analyses of single-nucleosome movement provide rich information on how chromatin is dynamically organized in a fluid manner in living cells.
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Submitted 16 August, 2019;
originally announced August 2019.
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High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions
Authors:
Witold Skowronski,
Stanislaw Lazarski,
Jakub Mojsiejuk,
Jakub Checinski,
Marek Frankowski,
Takayuki Nozaki,
Kay Yakushiji,
Shinji Yuasa
Abstract:
Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-depen…
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Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modelling is used to analyse the field- and angular-dependence of the V-FMR signal and to support experimental magnetization damping extraction.
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Submitted 4 June, 2019;
originally announced June 2019.
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Deterministic magnetization switching by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field
Authors:
Hiroshi Imamura,
Takayuki Nozaki,
Shinji Yuasa,
Yoshishige Suzuki
Abstract:
Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed switching scheme is not the toggle switching but the deterministic switching where the magnetic state is determined by the polarity of the applied voltage pulse. The…
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Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed switching scheme is not the toggle switching but the deterministic switching where the magnetic state is determined by the polarity of the applied voltage pulse. The mechanism and conditions for the switching are clarified. The results provide a fast and low-power writing method for magnetoresistive random access memories.
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Submitted 4 June, 2019;
originally announced June 2019.
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Symmetry and polarity of the voltage-controlled magnetic anisotropy studied by the Anomalous Hall effect
Authors:
Vadym Zayets,
Takayuki Nozaki,
Hidekazu Saito,
Akio Fukushima,
Shinji Yuasa
Abstract:
The voltage-controlled magnetic anisotropy (VCMA) effect in FeB and FeB/W films was measured by four independent methods. All measurements are consistent and show the same tendency. The coercive field, Hall angle, anisotropy field, the magnetization switching time and retention time linearly decrease when the gate voltage increases and they linearly increase when the gate voltage decreases.
The voltage-controlled magnetic anisotropy (VCMA) effect in FeB and FeB/W films was measured by four independent methods. All measurements are consistent and show the same tendency. The coercive field, Hall angle, anisotropy field, the magnetization switching time and retention time linearly decrease when the gate voltage increases and they linearly increase when the gate voltage decreases.
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Submitted 17 December, 2018;
originally announced December 2018.
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Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier
Authors:
Muftah Al-Mahdawi,
Mohamed Belmoubarik,
Masao Obata,
Daiki Yoshikawa,
Hideyuki Sato,
Tomohiro Nozaki,
Tatsuki Oda,
Masashi Sahashi
Abstract:
The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolatile control of magnetic anisotropy in ferromagnetic/ferroelectric CoPt/ZnO interface. Using the switched electric polarization of ZnO, the density-of-states and magnetic anisotropy at the CoPt surface show a large change…
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The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolatile control of magnetic anisotropy in ferromagnetic/ferroelectric CoPt/ZnO interface. Using the switched electric polarization of ZnO, the density-of-states and magnetic anisotropy at the CoPt surface show a large change. Due to a strong Co/Pt orbitals hybridization and a large spin-orbit coupling, a large control of magnetic anisotropy was found. We experimentally measured the change of effective anisotropy by tunneling resistance measurements in CoPt/Mg-doped ZnO/Co junctions. Additionally, we corroborate the origin of the control of magnetic anisotropy by observations on tunneling anisotropic magnetoresistance.
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Submitted 9 October, 2018;
originally announced October 2018.
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Search for the magnetic monopole at a magnetoelectric surface
Authors:
Q. N. Meier,
M. Fechner,
T. Nozaki,
M. Sahashi,
Z. Salman,
T. Proschka,
A. Suter,
P. Schoenherr,
M. Lilienblum,
P. Borisov,
I. E. Dzyaloshinskii,
M. Fiebig,
H. Luetkens,
N. A. Spaldin
Abstract:
We show, by solving Maxwell's equations, that an electric charge on the surface of a slab of a linear magnetoelectric material generates an image magnetic monopole below the surface provided that the magnetoelectric has a diagonal component in its magnetoelectric response. The image monopole, in turn, generates an ideal monopolar magnetic field outside of the slab. Using realistic values of the el…
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We show, by solving Maxwell's equations, that an electric charge on the surface of a slab of a linear magnetoelectric material generates an image magnetic monopole below the surface provided that the magnetoelectric has a diagonal component in its magnetoelectric response. The image monopole, in turn, generates an ideal monopolar magnetic field outside of the slab. Using realistic values of the electric- and magnetic- field susceptibilties, we calculate the magnitude of the effect for the prototypical magnetoelectric material Cr$_2$O$_3$. We use low energy muon spin rotation to measure the strength of the magnetic field generated by charged muons as a function of their distance from the surface of a Cr$_2$O$_3$ films, and show that the results are consistent with the existence of the monopole. We discuss other possible routes to detecting the monopolar field, and show that, while the predicted monopolar field generated by Cr$_2$O$_3$ is above the detection limit for standard magnetic force microscopy, detection of the field using this technique is prevented by surface charging effects.
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Submitted 21 January, 2019; v1 submitted 20 April, 2018;
originally announced April 2018.
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Voltage-induced precessional switching at zero-bias magnetic field in a conically magnetized free layer
Authors:
R. Matsumoto,
T. Nozaki,
S. Yuasa,
H. Imamura
Abstract:
Voltage-induced magnetization dynamics in a conically magnetized free layer with an elliptic cylinder shape is theoretically studied on the basis of the macrospin model. It is found that an application of voltage pulse can induce the precessional switching of magnetization even at zero-bias magnetic field, which is of substantial importance for device applications such as voltage-controlled nonvol…
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Voltage-induced magnetization dynamics in a conically magnetized free layer with an elliptic cylinder shape is theoretically studied on the basis of the macrospin model. It is found that an application of voltage pulse can induce the precessional switching of magnetization even at zero-bias magnetic field, which is of substantial importance for device applications such as voltage-controlled nonvolatile memory. Analytical expressions of the conditions for precessional switching are derived.
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Submitted 23 January, 2018;
originally announced January 2018.
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Lateral ferromagnetic domain control in Cr2O3/Pt/Co positive exchange bias system
Authors:
T. Nozaki,
M. Al-Mahdawi,
S. P. Pati,
S. Ye,
M. Sahashi
Abstract:
We investigated the perpendicular exchange bias (PEB) switching from negative- to positive-exchange bias state for Cr2O3/Pt/Co exchange coupling thin film system exhibiting positive exchange bias phenomena. By changing Pt spacer layer thickness or measurements temperature, we demonstrated the control of two kind of intermediate state of the switching; the double hysteresis loop indicating local, n…
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We investigated the perpendicular exchange bias (PEB) switching from negative- to positive-exchange bias state for Cr2O3/Pt/Co exchange coupling thin film system exhibiting positive exchange bias phenomena. By changing Pt spacer layer thickness or measurements temperature, we demonstrated the control of two kind of intermediate state of the switching; the double hysteresis loop indicating local, non-averaged PEB, and single hysteresis loop indicating averaged PEB. We proposed the way to control the lateral ferromagnetic domain though the control of PEB magnitude.
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Submitted 16 January, 2017;
originally announced January 2017.
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Enhancement of perpendicular magnetic anisotropy and its electric field-induced change through interface engineering in Cr/Fe/MgO
Authors:
A. Kozioł-Rachwał,
T. Nozaki,
K. Freindl,
J. Korecki,
S. Yuasa,
Y. Suzuki
Abstract:
Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO (Physical Review Applied 5, 044006 (2016)). In this study, we shed a light on the origin of large voltage-induced anisotropy change in Cr/Fe/MgO. Analysis of the chemical structure of Cr/Fe/MgO revealed the existence of Cr atoms in the proximity of the Fe/MgO interface, which can affect bo…
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Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO (Physical Review Applied 5, 044006 (2016)). In this study, we shed a light on the origin of large voltage-induced anisotropy change in Cr/Fe/MgO. Analysis of the chemical structure of Cr/Fe/MgO revealed the existence of Cr atoms in the proximity of the Fe/MgO interface, which can affect both magnetic anisotropy (MA) and its VC. We showed that PMA and its VC can be enhanced by controlled Cr doping at the Fe/MgO interface. For Cr/Fe (5.9 Å)/Cr (0.7 Å)/MgO with an effective PMA of 0.8 MJ/m3, a maximum value of the voltage-controlled magnetic anisotropy (VCMA) effect of 370 fJ/Vm was demonstrated.
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Submitted 30 December, 2016;
originally announced January 2017.
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Finite-size scaling effect on Néel temperature of antiferromagnetic Cr$_2$O$_3$-(0001) films in an exchange-coupled heterostructure
Authors:
Satya Prakash Pati,
Muftah Al-Mahdawi,
Shujun Ye,
Yohei Shiokawa,
Tomohiro Nozaki,
Masashi Sahashi
Abstract:
The scaling of antiferromagnetic ordering temperature of corundum-type chromia films have been investigated. Néel temperature $T_N$ was determined from the effect of perpendicular exchange-bias on the magnetization of a weakly-coupled adjacent ferromagnet. For a thick-film case, the validity of detection is confirmed by a susceptibility measurement. Detection of $T_N$ was possible down to 1-nm-thi…
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The scaling of antiferromagnetic ordering temperature of corundum-type chromia films have been investigated. Néel temperature $T_N$ was determined from the effect of perpendicular exchange-bias on the magnetization of a weakly-coupled adjacent ferromagnet. For a thick-film case, the validity of detection is confirmed by a susceptibility measurement. Detection of $T_N$ was possible down to 1-nm-thin chromia films. The scaling of ordering temperature with thickness was studied using different buffering materials, and compared with Monte-Carlo simulations. The spin-correlation length and the corresponding critical exponent were estimated, and they were consistent between experimental and simulation results. The spin-correlation length is an order of magnitude less than cubic antiferromagnets. We propose that the difference is from the change of number of exchange-coupling links in the two crystal systems.
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Submitted 4 January, 2017; v1 submitted 16 August, 2016;
originally announced August 2016.
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Low-energy magnetoelectric control of domain states in exchange-coupled heterostructures
Authors:
Muftah Al-Mahdawi,
Satya Prakash Pati,
Yohei Shiokawa,
Shujun Ye,
Tomohiro Nozaki,
Masashi Sahashi
Abstract:
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information memories and storage requires a heterostructure with a ferromagnetic layer for readout through the exchange-bias field. In magnetoelectric and multiferroic antifer…
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The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information memories and storage requires a heterostructure with a ferromagnetic layer for readout through the exchange-bias field. In magnetoelectric and multiferroic antiferromagnets, the exchange coupling exerts an additional impediment (energy barrier) to magnetization reversal by the applied magnetoelectric energy. We proposed and verified a method to overcome this barrier. We controlled the energy required for switching the magnetic domains in magnetoelectric \cro films by compensating the exchange-coupling energy from the ferromagnetic layer with the Zeeman energy of a small volumetric spontaneous magnetization found for the sputtered \cro films. Based on a simplified phenomenological model of the field-cooling process, the magnetic and electric fields required for switching could be tuned. As an example, the switching of antiferromagnetic domains around a zero-threshold electric field was demonstrated at a magnetic field of 2.6 kOe.
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Submitted 10 January, 2017; v1 submitted 8 August, 2016;
originally announced August 2016.
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Enhancing the blocking temperature of perpendicular-exchange biased Cr2O3 thin films using spacer and buffer layers
Authors:
Naoki Shimomura,
Satya Prakash Pati,
Tomohiro Nozaki,
Tatsuo Shibata,
Masashi Sahashi
Abstract:
In this study, we investigated the effect of spacer and buffer layers on the blocking temperature TB of the perpendicular exchange bias of thin Cr2O3 films, and revealed a high TB of 260 K for 20-nm-thick Cr2O3 thin films. By inserting a Ru spacer layer between the Cr2O3 and Co films and changing the spacer thickness, we controlled the magnitude of the exchange bias and TB. By comparing the TB val…
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In this study, we investigated the effect of spacer and buffer layers on the blocking temperature TB of the perpendicular exchange bias of thin Cr2O3 films, and revealed a high TB of 260 K for 20-nm-thick Cr2O3 thin films. By inserting a Ru spacer layer between the Cr2O3 and Co films and changing the spacer thickness, we controlled the magnitude of the exchange bias and TB. By comparing the TB values of the 20-nm-thick Cr2O3 films on Pt and alpha-Fe2O3 buffers, we investigated the lattice strain effect on the TB. We show that higher TB value can be obtained using an alpha-Fe2O3 buffer, which is likely because of the lattice-strain-induced increase of Cr2O3 magnetic anisotropy.
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Submitted 12 May, 2016;
originally announced May 2016.
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Temperature dependence of spin-orbit torques in W/CoFeB bilayers
Authors:
Witold Skowronski,
Monika Cecot,
Jaroslaw Kanak,
Slawomir Zietek,
Tomasz Stobiecki,
Lide Yao,
Sebastiaan van Dijken,
Takayuki Nozaki,
Kay Yakushiji,
Shinji Yuasa
Abstract:
We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse effective magnetic field components. The transverse effective field changes sign at 250 K for a 2 nm thick W buffer layer, indicating a much stronger contribution f…
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We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse effective magnetic field components. The transverse effective field changes sign at 250 K for a 2 nm thick W buffer layer, indicating a much stronger contribution from interface spin-orbit interactions compared to, for example, Ta. Transmission electron microscopy measurements reveal that considerable interface mixing between W and CoFeB is primarily responsible for this effect.
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Submitted 18 April, 2016;
originally announced April 2016.
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Critical behavior of sputter-deposited magnetoelectric antiferromagnetic Cr$_2$O$_3$ films near Néel temperature
Authors:
Muftah Al-Mahdawi,
Yohei Shiokawa,
Satya Prakash Pati,
Shujun Ye,
Tomohiro Nozaki,
Masashi Sahashi
Abstract:
Chromium(III) oxide is a classical collinear antiferromagnet with a linear magnetoelectric effect. We are presenting the measurements of the magnetoelectric susceptibility $α$ of a sputter-deposited 500-nm film and a bulk single-crystal of Cr$_\mathrm{2}$O$_\mathrm{3}$. We investigated the magnetic phase-transition and the critical exponent $β$ of the sublattice magnetization near Néel temperature…
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Chromium(III) oxide is a classical collinear antiferromagnet with a linear magnetoelectric effect. We are presenting the measurements of the magnetoelectric susceptibility $α$ of a sputter-deposited 500-nm film and a bulk single-crystal of Cr$_\mathrm{2}$O$_\mathrm{3}$. We investigated the magnetic phase-transition and the critical exponent $β$ of the sublattice magnetization near Néel temperature. For the films, an exponent of 0.49(1) was found below 293 K, and changed to 1.06(4) near the Néel temperature of 298 K. For the single-crystal, the exponent was constant at 0.324(4). We investigated the reversal probability of antiferromagnetic domains during magnetoelectric field cooling. For the sputtered films, reversal probability was zero above 298 K and stabilized only below 293 K. We attribute this behavior to formation of grains during film growth, which gives different intergrain and intragrain exchange-coupling energies. For the single-crystal, reversal probability was stabilized immediately at the Néel temperature of 307.6 K.
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Submitted 20 May, 2016; v1 submitted 24 February, 2016;
originally announced February 2016.
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Magnetoelectric properties of 500 nm Cr2O3 films
Authors:
P. Borisov,
T. Ashida,
T. Nozaki,
M. Sahashi,
D. Lederman
Abstract:
The linear magnetoelectric effect was measured in 500 nm Cr2O3 films grown by rf sputtering on Al2O3 substrates between top and bottom thin film Pt electrodes. Magnetoelectric susceptibility was measured directly by applying an AC electric field and measuring the induced AC magnetic moment using superconducting quantum interference device magnetometry. A linear dependence of the induced AC magneti…
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The linear magnetoelectric effect was measured in 500 nm Cr2O3 films grown by rf sputtering on Al2O3 substrates between top and bottom thin film Pt electrodes. Magnetoelectric susceptibility was measured directly by applying an AC electric field and measuring the induced AC magnetic moment using superconducting quantum interference device magnetometry. A linear dependence of the induced AC magnetic moment on the AC electric field amplitude was found. The temperature dependence of the magnetoelectric susceptibility agreed qualitatively and quantitatively with prior measurements of bulk single crystals, but the characteristic temperatures of the film were lower than those of single crystals. It was also possible to reverse the sign of the magnetoelectric susceptibility by reversing the sign of the magnetic field applied during cooling through the Néel temperature. A competition between total magnetoelectric and Zeeman energies is proposed to explain the difference between film and bulk Cr2O3 regarding the cooling field dependence of the magnetoelectric effect.
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Submitted 12 May, 2016; v1 submitted 21 February, 2016;
originally announced February 2016.
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Chemical analysis of ligand-free silicon nanocrystal surfaces by surface enhanced Raman spectroscopy
Authors:
İlker Doğan,
Ryan Gresback,
Tomohiro Nozaki,
Mauritius C. M. van de Sanden
Abstract:
Surface enhanced Raman spectroscopy (SERS) was used to probe the surface chemistry of chlorine-terminated silicon nanocrystal (Si-NC) surfaces in an air-free environment. SERS effect was observed from the thin films of Ag$_x$O using 514 nm laser wavelength. When a monolayer of Si-NCs were spin-coated on Ag$_x$O SERS substrates, a very clear signal of surface states, including Si-Cl$_x$, and Si-H…
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Surface enhanced Raman spectroscopy (SERS) was used to probe the surface chemistry of chlorine-terminated silicon nanocrystal (Si-NC) surfaces in an air-free environment. SERS effect was observed from the thin films of Ag$_x$O using 514 nm laser wavelength. When a monolayer of Si-NCs were spin-coated on Ag$_x$O SERS substrates, a very clear signal of surface states, including Si-Cl$_x$, and Si-H$_x$ were observed. Upon air-exposure, we observed the temporal reduction of Si-Cl$_x$ peak intensity, and a development of oxidation-related peak intensities, like Si-O$_x$ and Si-O-H$_x$. In addition, first, second and third order transverse optical (TO) modes of Si-NCs were also observed at 519, 1000 and 1600 cm$^{-1}$, respectively. As a comparison, Raman analysis of a thick film (> 200 nm) of Si-NCs deposited on ordinary glass substrates were performed. This analysis only demonstrated the first TO mode of Si-NCs, and the all the other features originated from SERS enhancement did not appear in the spectrum. These results conclude that, SERS is not only capable of single-molecule detection, but also a powerful technique for monitoring the surface chemistry of nanoparticles.
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Submitted 30 December, 2014;
originally announced December 2014.
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RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance
Authors:
K. Konishi,
D. K. Dixit,
A. A. Tulapurkar,
S. Miwa,
T. Nozaki,
H. Kubota,
A. Fukushima,
S. Yuasa,
Y. Suzuki
Abstract:
The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetizati…
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The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically investigated. The design principles for the enhancement of the gain factor are also discussed.
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Submitted 10 July, 2013;
originally announced July 2013.
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Analysis of Degradation in Graphene-based Spin Valves
Authors:
Kazuya Muramoto,
Masashi Shiraishi,
Nobuhiko Mitoma,
Takayuki Nozaki,
Teruya Shinjo,
Yoshishige Suzuki
Abstract:
The degradation mechanisms of multilayer graphene spin valves are investigated. The spin injection signals in graphene spin valves have been reported to be linearly dependent on the drain bias voltage, which indicates that the spin polarization of injected spins in graphene is robust against the bias voltage. We present that the disappearance of this robustness is due to two different degradatio…
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The degradation mechanisms of multilayer graphene spin valves are investigated. The spin injection signals in graphene spin valves have been reported to be linearly dependent on the drain bias voltage, which indicates that the spin polarization of injected spins in graphene is robust against the bias voltage. We present that the disappearance of this robustness is due to two different degradation mechanisms of the spin valves. Our findings indicate that the disappearance of the robustness is due to degradation rather than an intrinsic characteristic of graphene. Thus, the robustness can be greatly enhanced if degradation can be prevented.
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Submitted 17 November, 2009;
originally announced November 2009.
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Voltage-assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers
Authors:
Yoichi Shiota,
Takuto Maruyama,
Takayuki Nozaki,
Teruya Shinjo,
Masashi Shiraishi,
Yoshishige Suzuki
Abstract:
Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large perpendicular magnetic anisotropy change in Au(001) / ultrathin Fe80Co20(001) / MgO(001) / Polyimide / ITO junctions, and succeeded in realizing a clear switchin…
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Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large perpendicular magnetic anisotropy change in Au(001) / ultrathin Fe80Co20(001) / MgO(001) / Polyimide / ITO junctions, and succeeded in realizing a clear switching of magnetic easy axis between in-plane and perpendicular directions. Furthermore, employing a perpendicularly magnetized film, voltage-induced magnetization switching in the perpendicular direction under the assistance of magnetic fields was demonstrated. These pioneering results may open a new window of electric-field controlled spintronics devices.
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Submitted 2 May, 2009;
originally announced May 2009.
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Robustness of Spin Polarization in Graphene-based Spin Valves
Authors:
Masashi Shiraishi,
Megumi Ohishi,
Ryo Nouchi,
Takayuki Nozaki,
Teruya Shinjo,
Yoshishige Suzuki
Abstract:
Decrease of spin polarization in spintronics devices under an application of bias voltage is one of currently important problems which should be solved. We reveal unprecedented robustness of spin polarization in multi-layer graphene spin valves at room temperature. Surprisingly, the spin polarization of injected spins is constant up to a bias voltage of +2.7 V and -0.6 V in positive and negative…
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Decrease of spin polarization in spintronics devices under an application of bias voltage is one of currently important problems which should be solved. We reveal unprecedented robustness of spin polarization in multi-layer graphene spin valves at room temperature. Surprisingly, the spin polarization of injected spins is constant up to a bias voltage of +2.7 V and -0.6 V in positive and negative bias voltage applications, which is dramatically superior to all spintronics devices. Our finding is induced by suppression of spin scattering due to an ideal interface formation. Furthermore, we firstly report on important accordance between theory and experiment in molecular spintronics by observing the fact that signal intensity in a local scheme is double of that in a non-local scheme as theory predicts, which provides construction of a steadfast physical basis in this field.
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Submitted 5 November, 2009; v1 submitted 25 October, 2008;
originally announced October 2008.
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A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites
Authors:
Masashi Shiraishi,
Haruka Kusai,
Ryo Nouchi,
Takayuki Nozaki,
Teruya Shinjo,
Yoshishige Suzuki,
Makoto Yoshida,
Masashi Takigawa
Abstract:
We implemented a nuclear magnetic resonance (NMR) study on rubrene(C42H28)-Co nano-composites that exhibit an enhanced magnetoresistance (MR) ratio of 80%. The 59Co NMR spin echo experiment enabled clarification of the hyperfine field of Co at the interface between the ferromagnet and the molecules, which has not been investigated for molecular spintronics. An enhanced hyperfine field of the Co…
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We implemented a nuclear magnetic resonance (NMR) study on rubrene(C42H28)-Co nano-composites that exhibit an enhanced magnetoresistance (MR) ratio of 80%. The 59Co NMR spin echo experiment enabled clarification of the hyperfine field of Co at the interface between the ferromagnet and the molecules, which has not been investigated for molecular spintronics. An enhanced hyperfine field of the Co was observed in the rubrene-Co nano-composites, which may be related to the enhancement of the MR ratio. This study demonstrates the importance of microscopic investigation of the interface between molecules and ferromagnets that governs spin-dependent transport in molecular spin devices.
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Submitted 25 February, 2008;
originally announced February 2008.
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Spin Injection into a Graphene Thin Film at Room Temperature
Authors:
Megumi Ohishi,
Masashi Shiraishi,
Ryo Nouchi,
Takayuki Nozaki,
Teruya Shinjo,
Yoshishige Suzuki
Abstract:
We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these non-local measurements, an obvious MR effect was observed at room temperature; and the MR effect was ascribed to magnetization reversal of ferromagnetic electrodes.…
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We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these non-local measurements, an obvious MR effect was observed at room temperature; and the MR effect was ascribed to magnetization reversal of ferromagnetic electrodes. This result is a direct demonstration of spin injection into a graphene thin film. Furthermore, this is the first report of spin injection into molecules at room temperature.
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Submitted 11 June, 2007;
originally announced June 2007.
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An Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin-Valve
Authors:
Y. Jiang,
S. Abe,
T. Ochiai,
T. Nozaki,
A. Hirohata,
N. Tezuka,
K. Inomata
Abstract:
Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin-valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS be…
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Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin-valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin Ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.
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Submitted 27 April, 2004;
originally announced April 2004.
