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Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition
Authors:
S. Patel,
T. Faltermeier,
S. Puri,
R. Rodriguez,
K. Reynolds,
S. Davari,
H. O. H. Churchill,
N. J. Borys,
H. Nakamura
Abstract:
We present strain tuning of excitonic emission in monolayer MoSe$_2$ by using a high-temperature physical vapor deposition (PVD). The use of two amorphous substrates, Si$_{3}$N$_{4}$ and SiO$_{2}$, provides two setpoints to induce distinct amounts of \textit{biaxial} tensile strain determined by a thermal expansion mismatch between the monolayer and the substrate. The tuning rate of the $A$-excito…
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We present strain tuning of excitonic emission in monolayer MoSe$_2$ by using a high-temperature physical vapor deposition (PVD). The use of two amorphous substrates, Si$_{3}$N$_{4}$ and SiO$_{2}$, provides two setpoints to induce distinct amounts of \textit{biaxial} tensile strain determined by a thermal expansion mismatch between the monolayer and the substrate. The tuning rate of the $A$-exciton transition energy is found to be 103 meV/\% by photoluminescence (PL), which represents the highest value realized by biaxial strain in transition metal dichalcogenides. The biaxial nature of the tensile strain is confirmed by polarization-resolved second harmonic generation, which reveals unperturbed in-plane three-fold symmetry of the monolayer. Furthermore, a softening of $A_\mathrm{1g}$ out-of-plane lattice vibration is identified in the Raman spectroscopy, which is known to be insignificant for uniaxial strain. Concomitantly, PL mapping of our PVD monolayers demonstrates (i) larger strain occurs in the interior of the mono-domain islands compared to the edges and (ii) the absence of island-size dependence in the magnitude of induced strain. Our results demonstrate an effective path towards strain engineering of excitons by using growth substrates, which holds great promise as a building block for future optoelectronic applications.
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Submitted 27 August, 2024;
originally announced August 2024.
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Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides
Authors:
Jarosław Pawłowski,
Pankaj Kumar,
Kenji Watanabe,
Takashi Taniguchi,
Konstantin S. Novoselov,
Hugh O. H. Churchill,
Dharmraj Kotekar-Patil
Abstract:
Spin-valley properties in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDC) has attracted significant interest due to the possible applications in quantum computing. Spin-valley properties can be exploited in TMDC quantum dot (QD) with well-resolved energy levels. This requires smaller QDs, especially in material systems with heavy carrier effective mass e.g. TMDCs and si…
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Spin-valley properties in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDC) has attracted significant interest due to the possible applications in quantum computing. Spin-valley properties can be exploited in TMDC quantum dot (QD) with well-resolved energy levels. This requires smaller QDs, especially in material systems with heavy carrier effective mass e.g. TMDCs and silicon. Device architectures employed for TMDC QDs so far have difficulty achieving smaller QDs. Therefore, an alternative approach in the device architecture is needed. Here, we propose a multilayer device architecture to achieve a gate-defined QD in TMDC with a relatively large energy splitting on the QD. We provide a range of device dimensions and dielectric thicknesses and its correlation with the QD energy splitting. The device architecture is modeled realistically. Moreover, we show that all the device parameters used in modeling are experimentally achievable. These studies lay the foundation for future work toward spin-valley qubits in TMDCs. The successful implementation of these device architectures will drive the technological development of 2D materials-based quantum technologies.
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Submitted 1 March, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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Coupling Between Magnetic and Transport Properties in Magnetic Layered Material Mn2-xZnxSb
Authors:
Md Rafique Un Nabi,
Rabindra Basnet,
Krishna Pandey,
Santosh Karki Chhetri,
Dinesh Upreti,
Gokul Acharya,
Fei Wang,
Arash Fereidouni,
Hugh O. H. Churchill,
Yingdong Guan,
Zhiqiang Mao,
Jin Hu
Abstract:
We synthesized single crystals for Mn2-xZnxSb and studied their magnetic and electronic transport properties. This material system displays rich magnetic phase tunable with temperature and Zn composition. In addition, two groups of distinct magnetic and electronic properties, separated by a critical Zn composition of x = 0.6, are discovered. The Zn-less samples are metallic and characterized by a…
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We synthesized single crystals for Mn2-xZnxSb and studied their magnetic and electronic transport properties. This material system displays rich magnetic phase tunable with temperature and Zn composition. In addition, two groups of distinct magnetic and electronic properties, separated by a critical Zn composition of x = 0.6, are discovered. The Zn-less samples are metallic and characterized by a resistivity jump at the magnetic ordering temperature, while the Zn-rich samples lose metallicity and show a metal-to-insulator transition-like feature tunable by magnetic field. Our findings establish Mn2-xZnxSb as a promising material platform that offers opportunities to study how the coupling of spin, charge, and lattice degrees of freedom governs interesting transport properties in 2D magnets, which is currently a topic of broad interest.
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Submitted 21 August, 2023;
originally announced August 2023.
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Giant topological Hall effect in centrosymmetric tetragonal Mn2-xZnxSb
Authors:
Md Rafique Un Nabi,
Aaron Wegner,
Fei Wang,
Yanglin Zhu,
Yingdong Guan,
Arash Fereidouni,
Krishna Pandey,
Rabindra Basnet,
Gokul Acharya,
Hugh O. H. Churchill,
Zhiqiang Mao,
Jin Hu
Abstract:
Topological magnetism typically appears in noncentrosymmetric compounds or compounds with geometric frustration. Here we report the effective tuning of magnetism in centrosymmetric tetragonal Mn2-xZnxSb by Zn substitution. The magnetism is found to be closely coupled to the transport properties, giving rise to to a very large topological hall effect is possibly associated with topological magnetis…
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Topological magnetism typically appears in noncentrosymmetric compounds or compounds with geometric frustration. Here we report the effective tuning of magnetism in centrosymmetric tetragonal Mn2-xZnxSb by Zn substitution. The magnetism is found to be closely coupled to the transport properties, giving rise to to a very large topological hall effect is possibly associated with topological magnetism. Our finding suggests Mn2-xZnxSb is a candidate material for the centrosymmetric tetragonal topological magnetic system, offers opportunities for studying and tuning spin textures and developing near room temperature spin-based devices.
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Submitted 1 December, 2021;
originally announced December 2021.
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Integration of multi-layer black phosphorus into photoconductive antennas for THz emission
Authors:
M. H. Doha,
J. I. Santos Batista,
A. F. Rawwagah,
J. P. Thompson,
A. Fereidouni,
K. Watanabe,
T. Taniguchi,
M. El-Shenawee,
H. O. H. Churchill
Abstract:
We report the fabrication, characterization, and modeling of photoconductive antennas using 40 nm thin-film flakes of black phosphorus (BP) as the photoconductor and hexagonal boron nitride (hBN) as a capping layer to prevent oxidation of BP. Dipole antennas were fabricated on oxidized high-resistivity Si substrates, and BP and hBN flakes were picked up and transferred onto the antenna inside a ni…
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We report the fabrication, characterization, and modeling of photoconductive antennas using 40 nm thin-film flakes of black phosphorus (BP) as the photoconductor and hexagonal boron nitride (hBN) as a capping layer to prevent oxidation of BP. Dipole antennas were fabricated on oxidized high-resistivity Si substrates, and BP and hBN flakes were picked up and transferred onto the antenna inside a nitrogen glovebox. The transfer matrix technique was used to optimize the thickness of BP and hBN for maximum absorption. BP flakes were aligned with the armchair axis along the anode-cathode gap of the antenna, with crystal orientation measured using reflection anisotropy. Photocurrent imaging under illumination with 100 fs pulses at 780 and 1560 nm showed a bias-dependent maximum photocurrent localized to the antenna gap with a peak photoconductivity of 1 (2) S/cm in the linear regime of bias for excitation at 780 (1560) nm. Photocurrent saturation in bias (pump fluence) occurred at approximately 1 V (0.25 mJ/cm$^2$). Device performance was modeled numerically by solving Maxwell's equations and the drift-diffusion equation to obtain the photocurrent density in response to pulsed laser excitation, which was largely in qualitative agreement with the experimental observations. THz output computed from surface current density suggests that BP THz PCA performance is at least comparable to more traditional devices based on low-temperature-grown GaAs. These devices represent a step toward high-performance THz photoconductive antennas using BP.
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Submitted 24 July, 2020;
originally announced July 2020.
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Modulation Doping via a 2d Atomic Crystalline Acceptor
Authors:
Yiping Wang,
Jesse Balgley,
Eli Gerber,
Mason Gray,
Narendra Kumar,
Xiaobo Lu,
Jia-Qiang Yan,
Arash Fereidouni,
Rabindra Basnet,
Seok Joon Yun,
Dhavala Suri,
Hikari Kitadai,
Takashi Taniguchi,
Kenji Watanabe,
Xi Ling,
Jagadeesh Moodera,
Young Hee Lee,
Hugh O. H. Churchill,
Jin Hu,
Li Yang,
Eun-Ah Kim,
David G. Mandrus,
Erik A. Henriksen,
Kenneth S. Burch
Abstract:
Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor de…
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Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral doping (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN).
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Submitted 15 July, 2020; v1 submitted 13 July, 2020;
originally announced July 2020.
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Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe$_2$
Authors:
S. Davari,
J. Stacy,
A. M. Mercado,
J. D. Tull,
R. Basnet,
K. Pandey,
K. Watanabe,
T. Taniguchi,
J. Hu,
H. O. H. Churchill
Abstract:
We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb blockade regime is consistent with transport through a single l…
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We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb blockade regime is consistent with transport through a single level, and excited state transport through the dots was observed at temperatures up to 10 K. For adjacent charge states of a bilayer WSe$_2$ dot, magnetic field dependence of excited state energies was used to estimate $g$-factors between 0.8 and 2.4 for different states. These devices provide a platform to evaluate valley-spin states in monolayer and bilayer WSe$_2$ for application as qubits.
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Submitted 26 February, 2020;
originally announced February 2020.
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Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4
Authors:
Seng Huat Lee,
David Graf,
Yanglin Zhu,
Hemian Yi,
Samuel Ciocys,
Eun Sang Choi,
Rabindra Basnet,
Arash Fereidouni,
Aaron Wegner,
Yi-Fan Zhao,
Lujin Min,
Katrina Verlinde,
Jingyang He,
Ronald Redwing,
V. Gopalan,
Hugh O. H. Churchill,
Alessandra Lanzara,
Nitin Samarth,
Cui-Zu Chang,
Jin Hu,
Z. Q. Mao
Abstract:
The discovery of Weyl semimetals (WSMs) has fueled tremendous interest in condensed matter physics. WSMs require breaking of either inversion symmetry (IS) or time-reversal symmetry (TRS); they can be categorized into type-I and type-II WSMs, characterized by un-tilted and strongly tilted Weyl cones respectively. Type-I WSMs with breaking of IS or TRS and type-II WSMs with IS breaking have been re…
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The discovery of Weyl semimetals (WSMs) has fueled tremendous interest in condensed matter physics. WSMs require breaking of either inversion symmetry (IS) or time-reversal symmetry (TRS); they can be categorized into type-I and type-II WSMs, characterized by un-tilted and strongly tilted Weyl cones respectively. Type-I WSMs with breaking of IS or TRS and type-II WSMs with IS breaking have been realized experimentally, but TRS-breaking type-II WSM still remains elusive. In this article, we report an ideal TRS-breaking type-II WSM with only one pair of Weyl nodes observed in the antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4 under magnetic fields. This state is manifested by a large intrinsic anomalous Hall effect, a non-trivial $\mathrm{π}$ Berry phase of the cyclotron orbit and a large positive magnetoresistance in the ferromagnetic phase at an optimal sample composition. Our results establish a promising platform for exploring the physics underlying the long-sought, ideal TRS breaking type-II WSM.
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Submitted 31 August, 2020; v1 submitted 25 February, 2020;
originally announced February 2020.
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Growth and Strain Engineering of Trigonal Te for Topological Quantum Phases in Non-Symmorphic Chiral Crystals
Authors:
Rabindra Basnet,
M. Hasan Doha,
Takayuki Hironaka,
Krishna Pandey,
Shiva Davari,
Katie M. Welch,
Hugh O. H. Churchill,
Jin Hu
Abstract:
Strained trigonal Te has been predicted to host Weyl nodes supported by a non-symmorphic chiral symmetry. Using low-pressure physical vapor deposition, we systematically explored the growth of trigonal Te nanowires with naturally occurring strain caused by curvature of the wires. Raman spectra and high mobility electronic transport attest to the highly crystalline nature of the wires. Comparison o…
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Strained trigonal Te has been predicted to host Weyl nodes supported by a non-symmorphic chiral symmetry. Using low-pressure physical vapor deposition, we systematically explored the growth of trigonal Te nanowires with naturally occurring strain caused by curvature of the wires. Raman spectra and high mobility electronic transport attest to the highly crystalline nature of the wires. Comparison of Raman spectra for both straight and curved nanowires indicates a breathing mode that is significantly broader and shifted in frequency for the curved wires. Strain induced by curvature during growth therefore may provide a simple pathway to investigate topological phases in trigonal Te.
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Submitted 5 October, 2019;
originally announced October 2019.
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Exfoliation energy, quasi-particle bandstructure, and excitonic properties of selenium and tellurium atomic chains
Authors:
Eesha Andharia,
Thaneshwor P. Kaloni,
Gregory J. Salamo,
Shui-Qing Yu,
Hugh O. H. Churchill,
Salvador Barraza-Lopez
Abstract:
Effects that are not captured by the generalized-gradient density-functional theory play a prominent effect on the structural binding, and on the electronic and optical properties of reduced-dimensional and weakly-bound materials. Here, we report the exfoliation energy of selenium and tellurium atomic chains with non-empirical van der Waals corrections, and their electronic and optical properties…
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Effects that are not captured by the generalized-gradient density-functional theory play a prominent effect on the structural binding, and on the electronic and optical properties of reduced-dimensional and weakly-bound materials. Here, we report the exfoliation energy of selenium and tellurium atomic chains with non-empirical van der Waals corrections, and their electronic and optical properties with the GW and Bethe-Salpeter formalisms. The exfoliation energy is found to be within 0.547 to 0.719 eV/u.c. for the selenium atomic chain, and 0.737 to 0.926 eV/u.c. for the tellurium atomic chain (u.c. stands for unit cell), depending on the approximation for the van der Waals interaction and the numerical tool chosen. The GW electronic bandgap turned out to be 5.22--5.47 (4.44--4.59) eV for the Se (Te) atomic chains, with the lowest bound obtained with the Godby-Needs (GB), and the upper bound to the Hybertsen-Louie (HL) plasmon-pole models (PPMs). The binding energy of the ground-state excitonic state ranges between 2.69 to 2.72 eV for selenium chains within the HL and GB PPM, respectively, and turned out to be 2.35 eV for tellurium chains with both approximations. The ground state excitonic wave function is localized within 50 Å along the axis for both types of atomic chains, and its energy lies within the visible spectrum: blue [2.50(GN)--2.78(HL) eV] for selenium, and yellow--green [2.09(GN)--2.28(HL) eV] for tellurium, which could be useful for LED applications in the visible spectrum.
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Submitted 3 July, 2018; v1 submitted 13 September, 2017;
originally announced September 2017.
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Two-dimensional disorder in black phosphorus and monochalcogenide monolayers
Authors:
Mehrshad Mehboudi,
Alex M. Dorio,
Wenjuan Zhu,
Arend van der Zande,
Hugh O. H. Churchill,
Alejandro A. Pacheco-Sanjuan,
Edmund O. Harriss,
Pradeep Kumar,
Salvador Barraza-Lopez
Abstract:
Ridged, orthorhombic two-dimensional atomic crystals with a bulk {\em Pnma} structure such as black phosphorus and monochalcogenide monolayers are an exciting and novel material platform for a host of applications. Key to their crystallinity, monolayers of these materials have a four-fold degenerate structural ground state, and a single energy scale $E_C$ (representing the elastic energy required…
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Ridged, orthorhombic two-dimensional atomic crystals with a bulk {\em Pnma} structure such as black phosphorus and monochalcogenide monolayers are an exciting and novel material platform for a host of applications. Key to their crystallinity, monolayers of these materials have a four-fold degenerate structural ground state, and a single energy scale $E_C$ (representing the elastic energy required to switch the longer lattice vector along the $x-$ or $y-$direction) determines how disordered these monolayers are at finite temperature. Disorder arises when nearest neighboring atoms become gently reassigned as the system is thermally excited beyond a critical temperature $T_c$ that is proportional to $E_C/k_B$. $E_C$ is tunable by chemical composition and it leads to a classification of these materials into two categories: (i) Those for which $E_C\ge k_BT_m$, and (ii) those having $k_BT_m>E_C\ge 0$, where $T_m$ is a given material's melting temperature. Black phosphorus and SiS monolayers belong to category (i): these materials do not display an intermediate order-disorder transition and melt directly. All other monochalcogenide monolayers with $E_C>0$ belonging to class (ii) will undergo a two-dimensional transition prior to melting. $E_C/k_B$ is slightly larger than room temperature for GeS and GeSe, and smaller than 300 K for SnS and SnSe monolayers, so that these materials transition near room temperature. The onset of this generic atomistic phenomena is captured by a planar Potts model up to the order-disorder transition. The order-disorder phase transition in two dimensions described here is at the origin of the {\em Cmcm} phase being discussed within the context of bulk layered SnSe.
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Submitted 3 March, 2016; v1 submitted 30 October, 2015;
originally announced October 2015.
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Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide
Authors:
Britton W. H. Baugher,
Hugh O. H. Churchill,
Yafang Yang,
Pablo Jarillo-Herrero
Abstract:
One of the most fundamental devices for electronics and optoelectronics is the PN junction, which provides the functional element of diodes, bipolar transistors, photodetectors, LEDs, and solar cells, among many other devices. In conventional PN junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Materials with ambipolar conductance, however, allow for P…
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One of the most fundamental devices for electronics and optoelectronics is the PN junction, which provides the functional element of diodes, bipolar transistors, photodetectors, LEDs, and solar cells, among many other devices. In conventional PN junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Materials with ambipolar conductance, however, allow for PN junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here we report ambipolar monolayer WSe2 devices in which two local gates are used to define a PN junction exclusively within the sheet of WSe2. With these electrically tunable PN junctions, we demonstrate both PN and NP diodes with ideality factors better than 2. Under excitation with light, the diodes show photodetection responsivity of 210 mA/W and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising numbers for a nearly transparent monolayer sheet in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a fundamental building block for ubiquitous, ultra-thin, flexible, and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.
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Submitted 3 October, 2013; v1 submitted 1 October, 2013;
originally announced October 2013.
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Superconductor-Nanowire Devices from Tunneling to the Multichannel Regime: Zero-Bias Oscillations and Magnetoconductance Crossover
Authors:
H. O. H. Churchill,
V. Fatemi,
K. Grove-Rasmussen,
M. T. Deng,
P. Caroff,
H. Q. Xu,
C. M. Marcus
Abstract:
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and split away from zero bias as a function of magnetic field and gate voltage. A crossover in magnetoconductance is observed: Magnetic fields above ~ 0.5 T enhance c…
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We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and split away from zero bias as a function of magnetic field and gate voltage. A crossover in magnetoconductance is observed: Magnetic fields above ~ 0.5 T enhance conductance in the low-conductance (tunneling) regime but suppress conductance in the high-conductance (multichannel) regime. We consider these results in the context of Majorana zero modes as well as alternatives, including Kondo effect and analogs of 0.7 structure in a disordered nanowire.
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Submitted 10 March, 2013;
originally announced March 2013.
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g-Tensor Control in Bent Carbon Nanotube Quantum Dots
Authors:
R. A. Lai,
H. O. H. Churchill,
C. M. Marcus
Abstract:
We demonstrate gate control of the electronic g-tensor in single and double quantum dots formed along a bend in a carbon nanotube. From the dependence of the single-dot excitation spectrum on magnetic field magnitude and direction, we extract spin-orbit coupling, valley coupling, spin and orbital magnetic moments. Gate control of the g-tensor is measured using the splitting of the Kondo peak in co…
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We demonstrate gate control of the electronic g-tensor in single and double quantum dots formed along a bend in a carbon nanotube. From the dependence of the single-dot excitation spectrum on magnetic field magnitude and direction, we extract spin-orbit coupling, valley coupling, spin and orbital magnetic moments. Gate control of the g-tensor is measured using the splitting of the Kondo peak in conductance as a sensitive probe of Zeeman energy. In the double quantum dot regime, the magnetic field dependence of the position of cotunneling lines in the two dimensional charge stability diagram is used to infer the positions of the two dots along the nanotube.
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Submitted 28 October, 2012; v1 submitted 23 October, 2012;
originally announced October 2012.
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Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots
Authors:
G. Yamahata,
T. Kodera,
H. O. H. Churchill,
K. Uchida,
C. M. Marcus,
S. Oda
Abstract:
We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field scale is attributed to spin-orbit mediated spin relaxation. On a larger (\sim 400 mT) field scale, a peak in leakage current is seen in some, but not all, Pauli…
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We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field scale is attributed to spin-orbit mediated spin relaxation. On a larger (\sim 400 mT) field scale, a peak in leakage current is seen in some, but not all, Pauli-blocked transitions, and is attributed to spin-flip cotunneling. Both dip and peak structure show good agreement between theory and experiment.
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Submitted 30 November, 2011; v1 submitted 29 November, 2011;
originally announced November 2011.
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Spin-Orbit Effects in Carbon-Nanotube Double Quantum Dots
Authors:
S. Weiss,
E. I. Rashba,
F. Kuemmeth,
H. O. H Churchill,
K. Flensberg
Abstract:
We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the spin-orbit interaction that couples the electron's isospin to its real spin through two independent coupl…
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We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the spin-orbit interaction that couples the electron's isospin to its real spin through two independent coupling constants. In a single dot, both constants combine to split the spectrum into two Kramers doublets, while the antisymmetric constant solely controls the difference in the tunneling rates of the Kramers doublets between the dots. For the two-electron regime, the detailed structure of the spin-orbit split energy spectrum is investigated as a function of detuning between the quantum dots in a 22-dimensional Hilbert space within the framework of a single-longitudinal-mode model. We find a competing effect of the tunneling and Coulomb interaction. The former favors a left-right symmetric two-particle ground state, while in the regime where the Coulomb interaction dominates over tunneling, a left-right antisymmetric ground state is found. As a result, ground states on both sides of the $(11)$-$(02)$ degeneracy point may possess opposite left-right symmetry, and the electron dynamics when tuning the system from one side of the $(11)$-$(02)$ degeneracy point to the other is controlled by three selection rules (in spin, isospin, and left-right symmetry). We discuss implications for the spin-dephasing and Pauli blockade experiments.
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Submitted 27 September, 2010; v1 submitted 3 June, 2010;
originally announced June 2010.
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Carbon nanotubes for coherent spintronic devices
Authors:
F. Kuemmeth,
H. O. H. Churchill,
P. K. Herring,
C. M. Marcus
Abstract:
Carbon nanotubes bridge the molecular and crystalline quantum worlds, and their extraordinary electronic, mechanical and optical properties have attracted enormous attention from a broad scientific community. We review the basic principles of fabricating spin-electronic devices based on individual, electrically-gated carbon nanotubes, and present experimental efforts to understand their electron…
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Carbon nanotubes bridge the molecular and crystalline quantum worlds, and their extraordinary electronic, mechanical and optical properties have attracted enormous attention from a broad scientific community. We review the basic principles of fabricating spin-electronic devices based on individual, electrically-gated carbon nanotubes, and present experimental efforts to understand their electronic and nuclear spin degrees of freedom, which in the future may enable quantum applications.
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Submitted 14 December, 2009;
originally announced December 2009.
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Relaxation and Dephasing in a Two-electron 13C Nanotube Double Quantum Dot
Authors:
H. O. H. Churchill,
F. Kuemmeth,
J. W. Harlow,
A. J. Bestwick,
E. I. Rashba,
K. Flensberg,
C. H. Stwertka,
T. Taychatanapat,
S. K. Watson,
C. M. Marcus
Abstract:
We use charge sensing of Pauli blockade (including spin and isospin) in a two-electron 13C nanotube double quantum dot to measure relaxation and dephasing times. The relaxation time, T1, first decreases with parallel magnetic field then goes through a minimum in a field of 1.4 T. We attribute both results to the spin-orbit-modified electronic spectrum of carbon nanotubes, which suppresses hyperf…
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We use charge sensing of Pauli blockade (including spin and isospin) in a two-electron 13C nanotube double quantum dot to measure relaxation and dephasing times. The relaxation time, T1, first decreases with parallel magnetic field then goes through a minimum in a field of 1.4 T. We attribute both results to the spin-orbit-modified electronic spectrum of carbon nanotubes, which suppresses hyperfine mediated relaxation and enhances relaxation due to soft phonons. The inhomogeneous dephasing time, T2*, is consistent with previous data on hyperfine coupling strength in 13C nanotubes.
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Submitted 19 November, 2008;
originally announced November 2008.
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Electron-nuclear interaction in 13C nanotube double quantum dots
Authors:
H. O. H. Churchill,
A. J. Bestwick,
J. W. Harlow,
F. Kuemmeth,
D. Marcos,
C. H. Stwertka,
S. K. Watson,
C. M. Marcus
Abstract:
For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource allowing storage and retrieval of quantum information. To investigate the effect of a controllable nuclear environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double…
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For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource allowing storage and retrieval of quantum information. To investigate the effect of a controllable nuclear environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double quantum dots with integrated charge sensors made from single-walled carbon nanotubes with a variable concentration of 13C (nuclear spin I=1/2) among the majority zero-nuclear-spin 12C atoms. Spin-sensitive transport in double-dot devices grown using methane with the natural abundance (~ 1%) of 13C is compared with similar devices grown using an enhanced (~99%) concentration of 13C. We observe strong isotope effects in spin-blockaded transport, and from the dependence on external magnetic field, estimate the hyperfine coupling in 13C nanotubes to be on the order of 100 micro-eV, two orders of magnitude larger than anticipated theoretically. 13C-enhanced nanotubes are an interesting new system for spin-based quantum information processing and memory, with nuclei that are strongly coupled to gate-controlled electrons, differ from nuclei in the substrate, are naturally confined to one dimension, lack quadrupolar coupling, and have a readily controllable concentration from less than one to 10^5 per electron.
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Submitted 2 December, 2008; v1 submitted 19 November, 2008;
originally announced November 2008.
