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Nuclear spin polarization in silicon carbide at room temperature in the Earth's magnetic field
Authors:
A. N. Anisimov,
A. V. Poshakinskiy,
G. V. Astakhov
Abstract:
Coupled electron-nuclear spins represent a promising quantum system, where the optically induced electron spin polarization can be dynamically transferred to nuclear spins via the hyperfine interaction. Most experiments on dynamic nuclear polarization (DNP) are performed at cryogenic temperatures and/or in moderate external magnetic fields, the latter approach being very sensitive to the magnetic…
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Coupled electron-nuclear spins represent a promising quantum system, where the optically induced electron spin polarization can be dynamically transferred to nuclear spins via the hyperfine interaction. Most experiments on dynamic nuclear polarization (DNP) are performed at cryogenic temperatures and/or in moderate external magnetic fields, the latter approach being very sensitive to the magnetic field orientation. Here, we demonstrate that the $^{29}$Si nuclear spins in SiC can be efficiently polarized at room temperature even in the Earth's magnetic field. We exploit the asymmetric splitting of the optically detected magnetic resonance (ODMR) lines inherent to half-integer $S = 3/2$ electron spins, such that the certain transitions involving $^{29}$Si nuclei can be clearly separated and selectively addressed using radiofrequency (RF) fields. As a model system, we use the V3 silicon vacancy in 6H-SiC, which has the zero-filed splitting parameter comparable with the hyperfine interaction constant. Our theoretical model considers DNP under optical excitation in combination with RF driving and agrees very well with the experimental data. In the case of high-fidelity electron spin polarization, the proposed DNP protocol leads to ultra-deep optical cooling of nuclear spins with an effective temperature of about 50 nK. These results provide a straightforward approach for controlling the nuclear spin under ambient conditions, representing an important step toward realizing nuclear hyperpolarization for magnetic resonance imaging and long nuclear spin memory for quantum logic gates.
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Submitted 18 August, 2024;
originally announced August 2024.
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Effect of Helium Ion Implantation on 3C-SiC Nanomechanical String Resonators
Authors:
Philipp Bredol,
Felix David,
Nagesh S. Jagtap,
Yannick S. Klaß,
Georgy V. Astakhov,
Artur Erbe,
Eva M. Weig
Abstract:
Hybrid quantum devices enable novel functionalities by combining the benefits of different subsystems. Particularly, point defects in nanomechanical resonators made of diamond or silicon carbide (SiC) have been proposed for precise magnetic field sensing and as versatile quantum transducers. However, the realization of a hybrid system may involve tradeoffs in the performance of the constituent sub…
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Hybrid quantum devices enable novel functionalities by combining the benefits of different subsystems. Particularly, point defects in nanomechanical resonators made of diamond or silicon carbide (SiC) have been proposed for precise magnetic field sensing and as versatile quantum transducers. However, the realization of a hybrid system may involve tradeoffs in the performance of the constituent subsystems. In a spin-mechanical system, the mechanical properties of the resonator may suffer from the presence of engineered defects in the crystal lattice. This may severely restrict the performance of the resulting device and needs to be carefully explored. Here, we focus on the impact of defects on high Q nanomechanical string resonators made of pre-stressed 3C-SiC grown on Si(111). We use helium ion implantation to create point defects and study their accumulated effect on the mechanical performance. Using Euler-Bernoulli beam theory, we present a method to determine Young's modulus and the pre-stress of the strings. We find that Young's modulus is not modified by implantation. Under implantation doses relevant for single defect or defect ensemble generation, both tensile stress and damping rate also remain unaltered. For higher implantation dose, both exhibit a characteristic change.
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Submitted 3 May, 2024;
originally announced May 2024.
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Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields
Authors:
A. Hernández-Mínguez,
A. V. Poshakinskiy,
M. Hollenbach,
P. V. Santos,
G. V. Astakhov
Abstract:
The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to t…
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The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to the symmetry axis leads to nontrivial behavior caused by dynamical reorientation of the $\mathrm{V_{Si}}$ spin multipole under optical excitation. Particularly, we observe the inversion of the quadrupole spin polarization in the excited state and appearance of the dipole spin polarization in the ground state. The latter is much higher than thermal polarization and cannot be induced solely by optical excitation. Our theoretical calculations reproduce well all sharp features in the spin resonance spectra, and shine light on the complex dynamics of spin multipoles in these kinds of solid-state systems.
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Submitted 11 April, 2024;
originally announced April 2024.
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Ultralong-term high-density data storage with atomic defects in SiC
Authors:
M. Hollenbach,
C. Kasper,
D. Erb,
L. Bischoff,
G. Hlawacek,
H. Kraus,
W. Kada,
T. Ohshima,
M. Helm,
S. Facsko,
V. Dyakonov,
G. V. Astakhov
Abstract:
There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we…
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There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.
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Submitted 28 October, 2023;
originally announced October 2023.
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Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing
Authors:
Roberto Rizzato,
Martin Schalk,
Stephan Mohr,
Joachim P. Leibold,
Jens C. Hermann,
Fleming Bruckmaier,
Peirui Ji,
Georgy V. Astakhov,
Ulrich Kentsch,
Manfred Helm,
Andreas V. Stier,
Jonathan J. Finley,
Dominik B. Bucher
Abstract:
Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently l…
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Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently limits its scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by nearly two orders of magnitude, approaching the fundamental $T_1$ relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect electromagnetic signals in the MHz range with sub-Hz resolution. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.
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Submitted 24 December, 2022;
originally announced December 2022.
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Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC
Authors:
T. Vasselon,
A. Hernández-Mínguez,
M. Hollenbach,
G. V. Astakhov,
P. V. Santos
Abstract:
The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detecte…
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The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detected magnetic resonance at room temperature, spin control of the V1 centers above cryogenic temperatures has so far remained elusive. Here, we show that the dynamic strain of surface acoustic waves can overcome this limitation and efficiently excite magnetic resonances of V1 centers up to room temperature. Based on the width and temperature dependence of the acoustically induced spin resonances of the V1 centers, we attribute them to transitions between spin sublevels in the excited state. The acoustic spin control of both kinds of $\mathrm{V}_\mathrm{Si}$ centers in their excited states opens new ways for applications in quantum technologies based on spin-optomechanics.
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Submitted 25 August, 2023; v1 submitted 15 December, 2022;
originally announced December 2022.
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Milliwatt terahertz harmonic generation from topological insulator metamaterials
Authors:
Klaas-Jan Tielrooij,
Alessandro Principi,
David Saleta Reig,
Alexander Block,
Sebin Varghese,
Steffen Schreyeck,
Karl Brunner,
Grzegorz Karczewski,
Igor Ilyakov,
Oleksiy Ponomaryov,
Thales V. A. G. de Oliveira,
Min Chen,
Jan-Christoph Deinert,
Carmen Gomez Carbonell,
Sergio O. Valenzuela,
Laurens W. Molenkamp,
Tobias Kiessling,
Georgy V. Astakhov,
Sergey Kovalev
Abstract:
Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at…
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Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at increasing incident powers, as shown recently for graphene. Here, we demonstrate room-temperature terahertz harmonic generation in a Bi$_2$Se$_3$ topological insulator and topological-insulator-grating metamaterial structures with surface-selective terahertz field enhancement. We obtain a third-harmonic power approaching the milliwatt range for an incident power of 75 mW - an improvement by two orders of magnitude compared to a benchmarked graphene sample. We establish a framework in which this exceptional performance is the result of thermodynamic harmonic generation by the massless topological surface states, benefiting from ultrafast dissipation of electronic heat via surface-bulk Coulomb interactions. These results are an important step towards on-chip terahertz (opto)electronic applications.
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Submitted 1 November, 2022;
originally announced November 2022.
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Emitter-Optomechanical Interaction in Ultra-High-Q hBN Nanocavities
Authors:
Chenjiang Qian,
Viviana Villafañe,
Martin Schalk,
Georgy V. Astakhov,
Ulrich Kentsch,
Manfred Helm,
Pedro Soubelet,
Andreas V. Stier,
Jonathan J. Finley
Abstract:
Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emis…
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Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emission spectrum for cavities with Q-factor above a threshold of 10$^4$. Similar asymmetries are not observed for cavities without $V_B^-$ centers. To explain our findings, we model the system with phonon-induced light-matter coupling based on $V_B^-$ centers, and compare to the Jaynes-Cummings model for usual emitters. Our results reveal that the multipartite interplay arises during the light-matter coupling of $V_B^-$ centers, illustrating that it is phonon-induced, rather than being caused by thermal population of phonon modes. Such emitter-optomechanical interaction between different photon ($V_B^-$ emission, cavity photonic) and phonon ($V_B^-$ phonon, cavity mechanical) modes provides a novel system to interface spin defects, photons and phonons in condensed matters.
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Submitted 31 January, 2023; v1 submitted 30 September, 2022;
originally announced October 2022.
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Nonlinear magnon control of atomic spin defects in scalable quantum devices
Authors:
Mauricio Bejarano,
Francisco J. T. Goncalves,
Toni Hache,
Michael Hollenbach,
Christopher Heins,
Tobias Hula,
Lukas Körber,
Jakob Heinze,
Yonder Berencén,
Manfred Helm,
Jürgen Fassbender,
Georgy V. Astakhov,
Helmut Schultheiss
Abstract:
Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance o…
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Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance overlap between the magnonic system and the spin centers. Here we circumvent this challenge by harnessing nonlinear magnon scattering processes in a magnetic vortex to access magnon modes that overlap in frequency with silicon-vacancy ($\textrm{V}_{\mathrm{Si}}$) spin transitions in SiC. Our results offer a route to develop hybrid systems that benefit from marrying the rich nonlinear dynamics of magnons with the advantageous properties of SiC for scalable quantum technologies.
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Submitted 18 August, 2022;
originally announced August 2022.
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Superradiance of Spin Defects in Silicon Carbide for Maser Applications
Authors:
Andreas Gottscholl,
Maximilian Wagenhöfer,
Manuel Klimmer,
Selina Scherbel,
Christian Kasper,
Valentin Baianov,
Georgy V. Astakhov,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy…
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Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy (V$_{Si}$) defects in silicon carbide (SiC) to overcome the microwave generation threshold and discuss the advantages of this highly developed spin hosting material. To achieve population inversion, we optically pump the V$_{Si}$ into their $m_S$ = $\pm$1/2 spin sub-states and additionally tune the Zeeman energy splitting by applying an external magnetic field. In this way, the prerequisites for stimulated emission by means of resonant microwaves in the 10 GHz range are fulfilled. On the way to realising a maser, we were able to systematically solve a series of subtasks that improved the underlying relevant physical parameters of the SiC samples. Among others, we investigated the pump efficiency as a function of the optical excitation wavelength and the angle between the magnetic field and the defect symmetry axis in order to boost the population inversion factor, a key figure of merit for the targeted microwave oscillator. Furthermore, we developed a high-Q sapphire microwave resonator (Q ~ 10$^4$ - 10$^5$) with which we find superradiant stimulated microwave emission. In summary, SiC with optimized spin defect density and thus spin relaxation rates is well on its way of becoming a suitable maser gain material with wide-ranging applications.
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Submitted 6 May, 2022; v1 submitted 1 March, 2022;
originally announced March 2022.
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Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission
Authors:
Chenjiang Qian,
Viviana Villafañe,
Martin Schalk,
G. V. Astakhov,
Ulrich Kentsch,
Manfred Helm,
Pedro Soubelet,
Nathan P. Wilson,
Roberto Rizzato,
Stephan Mohr,
Alexander W. Holleitner,
Dominik B. Bucher,
Andreas V. Stier,
JonathanJ. Finley
Abstract:
Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q n…
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Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to $V_B^-$. Our observations are consistent with the spatial redistribution of $V_B^-$ emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using $V_B^-$ as cavity spin-photon interfaces.
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Submitted 22 June, 2022; v1 submitted 22 February, 2022;
originally announced February 2022.
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A photonic platform hosting telecom photon emitters in silicon
Authors:
Michael Hollenbach,
Nagesh S. Jagtap,
Ciarán Fowley,
Juan Baratech,
Verónica Guardia-Arce,
Ulrich Kentsch,
Anna Eichler-Volf,
Nikolay V. Abrosimov,
Artur Erbe,
ChaeHo Shin,
Hakseong Kim,
Manfred Helm,
Woo Lee,
Georgy V. Astakhov,
Yonder Berencén
Abstract:
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a…
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Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.
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Submitted 5 December, 2021;
originally announced December 2021.
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Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface
Authors:
I. D. Breev,
Z. Shang,
A. V. Poshakinskiy,
H. Singh,
Y. Berencén,
M. Hollenbach,
S. S. Nagalyuk,
E. N. Mokhov,
R. A. Babunts,
P. G. Baranov,
D. Suter,
S. A. Tarasenko,
G. V. Astakhov,
A. N. Anisimov
Abstract:
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coheren…
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Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coherent silicon vacancy spin qubits, a drawback for their practical application is the unfavorable ordering of the electronic levels in the optically excited state. Here, we demonstrate that due to polytypism of SiC, a particular type of silicon vacancy qubits in 6H-SiC possesses an unusual inverted fine structure. This results in the directional emission of light along the hexagonal crystallographic axis, making photon extraction more efficient and integration into photonic structures technologically straightforward. From the angular polarization dependencies of the emission, we reconstruct the spatial symmetry and determine the optical selection rules depending on the local deformation and spin-orbit interaction, enabling direct implementation of robust spin-photon entanglement schemes. Furthermore, the inverted fine structure leads to unexpected behavior of the spin readout contrast. It vanishes and recovers with lattice cooling due to two competing optical spin pumping mechanisms. Our experimental and theoretical approaches provide a deep insight into the optical and spin properties of atomic-scale qubits in SiC required for quantum communication and distributed quantum information processing.
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Submitted 14 July, 2021;
originally announced July 2021.
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Acoustically induced coherent spin trapping
Authors:
A. Hernández-Mínguez,
A. V. Poshakinskiy,
M. Hollenbach,
P. V. Santos,
G. V. Astakhov
Abstract:
Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that str…
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Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that strain-induced spin interactions within their optically excited state (ES) can exceed by two orders of magnitude the ones within the GS. This gives rise to novel physical phenomena, such as the acoustically induced coherent spin trapping (CST) unvealed here. The CST manifests itself as the spin preservation along one particular direction under the coherent drive of the GS and ES by the same acoustic field. Our findings provide new opportunities for the coherent control of spin qubits with dynamically generated strain fields that can lead towards the realization of future spin-acoustic quantum devices.
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Submitted 7 April, 2021;
originally announced April 2021.
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Stress-controlled zero-field spin splitting in silicon carbide
Authors:
I. D. Breev,
A. V. Poshakinskiy,
V. V. Yakovleva,
S. S. Nagalyuk,
E. N. Mokhov,
R. Hübner,
G. V. Astakhov,
P. G. Baranov,
A. N. Anisimov
Abstract:
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 cent…
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We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.
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Submitted 8 December, 2020;
originally announced December 2020.
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Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
Authors:
I. D. Breev,
K. V. Likhachev,
V. V. Yakovleva,
R. Hübner,
G. V. Astakhov,
P. G. Baranov,
E. N. Mokhov,
A. N. Anisimov
Abstract:
We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of t…
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We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of the 4H- and 6H-SiC layers. Using the earlier experimental prediction for the phonon-deformation potential constants, we determine the stress tensor components in SiC as a function of the distance from the AlN/SiC heterointerface. In spite that the lattice parameter of SiC is smaller than that of AlN, the SiC layers are compressively strained at the heterointerface. This counterintuitive behavior is explained by different coefficients of thermal expansion of SiC and AlN when the heterostructures are cooled from growth to room temperature. The compressive stress values are maximum at the heterointerface, approaching one GPa, and relaxes to the equilibrium value on the scale of several tens of microns from the heterointerface.
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Submitted 27 November, 2020;
originally announced November 2020.
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Mapping the stray fields of a nanomagnet using spin qubits in SiC
Authors:
M. Bejarano,
F. J. T. Goncalves,
M. Hollenbach,
T. Hache,
T. Hula,
Y. Berencén,
J. Fassbender,
M. Helm,
G. V. Astakhov,
H. Schultheiss
Abstract:
We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patt…
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We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.
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Submitted 1 September, 2020;
originally announced September 2020.
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Engineering telecom single-photon emitters in silicon for scalable quantum photonics
Authors:
M. Hollenbach,
Y. Berencén,
U. Kentsch,
M. Helm,
G. V. Astakhov
Abstract:
We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the car…
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We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.
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Submitted 21 August, 2020;
originally announced August 2020.
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Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature
Authors:
A. Hernández-Mínguez,
A. V. Poshakinskiy,
M. Hollenbach,
P. V. Santos,
G. V. Astakhov
Abstract:
We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the st…
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We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance, which changes upon magnetic field inversion. These results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.
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Submitted 2 May, 2020;
originally announced May 2020.
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Local vibrational modes of Si vacancy spin qubits in SiC
Authors:
Z. Shang,
A. Hashemi,
Y. Berencén,
H. -P. Komsa,
P. Erhart,
A. V. Krasheninnikov,
G. V. Astakhov
Abstract:
Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacan…
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Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacancy spin qubits in as-grown 4H-SiC. We apply the resonant microwave field to isolate the contribution from one particular type of defects, the so-called V2 center, and observe the zero-phonon line together with seven equally-separated phonon replicas. Furthermore, we present first-principles calculations of the photoluminescence lineshape, which are in excellent agreement with our experimental data. To boost up the calculation accuracy and decrease the computation time, we extract the force constants using machine learning algorithms. This allows us to identify dominant modes in the lattice vibrations coupled to an excited electron during optical emission in the Si vacancy. The resonance phonon energy of 36 meV and the Debye-Waller factor of about 6% are obtained. We establish experimentally that the activation energy of the optically-induced spin polarization is given by the local vibrational energy. Our findings give insight into the coupling of electronic states to vibrational modes in SiC spin qubits, which is essential to predict their spin, optical, mechanical and thermal properties. The approach described can be applied to a large variety of spin defects with spectrally overlapped contributions in SiC as well as in other 3D and 2D materials.
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Submitted 4 February, 2020; v1 submitted 31 January, 2020;
originally announced February 2020.
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Influence of irradiation on defect spin coherence in silicon carbide
Authors:
C. Kasper,
D. Klenkert,
Z. Shang,
D. Simin,
A. Sperlich,
H. Kraus,
C. Schneider,
S. Zhou,
M. Trupke,
W. Kada,
T. Ohshima,
V. Dyakonov,
G. V. Astakhov
Abstract:
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of…
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Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time ($T_1$) and spin coherence time ($T_2$) of silicon vacancies in 4H-SiC created by neutron, electron and proton irradiation in a broad range of fluences. We also examine the effect of irradiation energy and sample annealing. We establish a robustness of the $T_1$ time against all types of irradiation and reveal a universal scaling of the $T_2$ time with the emitter density. Our results can be used to optimize the coherence properties of silicon vacancy qubits in SiC for specific tasks.
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Submitted 19 August, 2019;
originally announced August 2019.
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Optically detected spin-mechanical resonance in silicon carbide membranes
Authors:
A. V. Poshakinskiy,
G. V. Astakhov
Abstract:
Hybrid spin-mechanical systems are a promising platform for future quantum technologies. Usually they require application of additional microwave fields to project integer spin to a readable state. We develop a theory of optically detected spin-mechanical resonance associated with half-integer spin defects in silicon carbide (SiC) membranes. It occurs when a spin resonance frequency matches a reso…
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Hybrid spin-mechanical systems are a promising platform for future quantum technologies. Usually they require application of additional microwave fields to project integer spin to a readable state. We develop a theory of optically detected spin-mechanical resonance associated with half-integer spin defects in silicon carbide (SiC) membranes. It occurs when a spin resonance frequency matches a resonance frequency of a mechanical mode, resulting in a shortening of the spin relaxation time through resonantly enhanced spin-phonon coupling. The effect can be detected as an abrupt reduction of the photoluminescence intensity under optical pumping without application of microwave fields. We propose all-optical protocols based on such spin-mechanical resonance to detect external magnetic fields and mass with ultra-high sensitivity. We also discuss room-temperature nonlinear effects under strong optical pumping, including spin-mediated cooling and heating of mechanical modes. Our approach suggests a new concept for quantum sensing using spin-optomechanics.
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Submitted 3 March, 2019;
originally announced March 2019.
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Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
Authors:
V. A. Soltamov,
C. Kasper,
A. V. Poshakinskiy,
A. N. Anisimov,
E. N. Mokhov,
A. Sperlich,
S. A. Tarasenko,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and s…
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Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and solid-state qudits have been implemented on the basis of photonic chips and superconducting circuits, respectively. However, there is still a lack of room-temperature qudits with long coherence time and high spectral resolution. The silicon vacancy centers in silicon carbide (SiC) with spin S = 3/2 are quite promising in this respect, but until now they were treated as a canonical qubit system. Here, we apply a two-frequency protocol to excite and image multiple qudit modes in a SiC spin ensemble under ambient conditions. Strikingly, their spectral width is about one order of magnitude narrower than the inhomogeneous broadening of the corresponding spin resonance. By applying Ramsey interferometry to these spin qudits, we achieve a spectral selectivity of 600 kHz and a spectral resolution of 30 kHz. As a practical consequence, we demonstrate absolute DC magnetometry insensitive to thermal noise and strain fluctuations.
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Submitted 26 July, 2018;
originally announced July 2018.
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Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission
Authors:
M. Fischer,
A. Sperlich,
H. Kraus,
T. Ohshima,
G. V. Astakhov,
V. Dyakonov
Abstract:
We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally…
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We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.
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Submitted 31 August, 2017;
originally announced September 2017.
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Spin and optical properties of silicon vacancies in silicon carbide (a review)
Authors:
S. A. Tarasenko,
A. V. Poshakinskiy,
D. Simin,
V. A. Soltamov,
E. N. Mokhov,
P. G. Baranov,
V. Dyakonov,
G. V. Astakhov
Abstract:
We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The fine structure of the spin centers turns out to be highly sensitive to mechanical pressure, external magnetic and electric fields, temperature variation, etc., whi…
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We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The fine structure of the spin centers turns out to be highly sensitive to mechanical pressure, external magnetic and electric fields, temperature variation, etc., which can be utilized for efficient room-temperature sensing, particularly by purely optical means or through the optically detected magnetic resonance. We discuss the experimental achievements in magnetometry and thermometry based on the spin state mixing at level anticrossings in an external magnetic field and the underlying microscopic mechanisms. We also discuss spin fluctuations in an ensemble of vacancies caused by interaction with environment.
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Submitted 18 July, 2017;
originally announced July 2017.
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Optical thermometry based on level anticrossing in silicon carbide
Authors:
A. N. Anisimov,
D. Simin,
V. A. Soltamov,
S. P. Lebedev,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
We report a giant thermal shift of $2.1 \,$MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences c…
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We report a giant thermal shift of $2.1 \,$MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of $100 \,$mK/Hz$^{1/2}$ for a detection volume of approximately $10^{-6} \,$mm$^{3}$. In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.
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Submitted 21 September, 2016;
originally announced September 2016.
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Observation of the universal magnetoelectric effect in a 3D topological insulator
Authors:
V. Dziom,
A. Shuvaev,
A. Pimenov,
G. V. Astakhov,
C. Ames,
K. Bendias,
J. Böttcher,
G. Tkachov,
E. M. Hankiewicz,
C. Brüne,
H Buhmann,
L. W. Molenkamp
Abstract:
The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of $e^2 / 2 h c $ per surface. Here, we report on the observation of this so-called topological magneto…
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The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of $e^2 / 2 h c $ per surface. Here, we report on the observation of this so-called topological magnetoelectric (TME) effect. We use monochromatic terahertz (THz) spectroscopy of TI structures equipped with a semi-transparent gate to selectively address surface states. In high external magnetic fields, we observe a universal Faraday rotation angle equal to the fine structure constant $α= e^2 / \hbar c$ when a linearly polarized THz radiation of a certain frequency passes through the two surfaces of a strained HgTe 3D TI. These experiments give insight into axion electrodynamics of TIs and may potentially be used for a metrological definition of the three basic physical constants.
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Submitted 17 March, 2016;
originally announced March 2016.
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Locking of electron spin coherence over fifty milliseconds in natural silicon carbide
Authors:
D. Simin,
H. Kraus,
A. Sperlich,
T. Ohshima,
G. V. Astakhov,
V. Dyakonov
Abstract:
We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced decoherence rate is attained through the suppression of heteronuclear spin cross-talking by applying a moderate magnetic field in combination with dynamic decou…
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We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced decoherence rate is attained through the suppression of heteronuclear spin cross-talking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. We identify several phonon-assisted mechanisms of spin-lattice relaxation, ultimately limiting quantum coherence, and find that it can be extremely long at cryogenic temperature, equal or even longer than 8 seconds. Our approach may be extended to other polyatomic compounds and open a path towards improved qubit memory for wafer-scale quantum techmologies.
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Submitted 10 November, 2016; v1 submitted 18 February, 2016;
originally announced February 2016.
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All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
Authors:
D. Simin,
V. A. Soltamov,
A. V. Poshakinskiy,
A. N. Anisimov,
R. A. Babunts,
D. O. Tolmachev,
E. N. Mokhov,
M. Trupke,
S. A. Tarasenko,
A. Sperlich,
P. G. Baranov,
V. Dyakonov,
G. V. Astakhov
Abstract:
We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp…
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We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity of 87 nT Hz$^{-1/2}$ within a volume of $3 \times 10^{-7}$ mm$^{3}$ at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm$^{3}$ the projection noise limit is below 100 fT Hz$^{-1/2}$.
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Submitted 28 May, 2016; v1 submitted 15 November, 2015;
originally announced November 2015.
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High precision vector magnetometry with uniaxial quantum centers in silicon carbide
Authors:
D. Simin,
F. Fuchs,
H. Kraus,
A. Sperlich,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agre…
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We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agreement between the experimental and calculated spin resonance spectra without any fitting parameters, providing angle resolution of a few degrees in the magnetic field range up to several millitesla. Our approach is suitable for ensembles as well as for single spin-3/2 color centers, allowing for vector magnetometry on the nanoscale at ambient conditions.
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Submitted 1 May, 2015;
originally announced May 2015.
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Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects
Authors:
A. Muzha,
F. Fuchs,
N. V. Tarakina,
D. Simin,
M. Trupke,
V. A. Soltamov,
E. N. Mokhov,
P. G. Baranov,
V. Dyakonov,
A. Krueger,
G. V. Astakhov
Abstract:
Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in…
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Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect, for the first time, room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers, but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical and biological processes.
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Submitted 2 September, 2014;
originally announced September 2014.
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Engineering near infrared single photon emitters in ultrapure silicon carbide
Authors:
F. Fuchs,
B. Stender,
M. Trupke,
J. Pflaum,
V. Dyakonov,
G. V. Astakhov
Abstract:
Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with long spin coherence times. Such single quantum systems have been realized using quantum dots, colour centres in diamond, dopants in nanostructures and molecules…
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Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with long spin coherence times. Such single quantum systems have been realized using quantum dots, colour centres in diamond, dopants in nanostructures and molecules . More recently, ensemble emitters with spin dephasing times on the order of microseconds and room-temperature optically detectable magnetic resonance have been identified in silicon carbide (SiC), a compound being highly compatible to up-to-date semiconductor device technology. So far however, the engineering of such spin centres in SiC on single-emitter level has remained elusive. Here, we demonstrate the control of spin centre density in ultrapure SiC over 8 orders of magnitude, from below $10^{9}$ to above $10^{16} \,$cm$^{-3}$ using neutron irradiation. For a low irradiation dose, a fully photostable, room-temperature, near infrared (NIR) single photon emitter can clearly be isolated, demonstrating no bleaching even after $10^{14}$ excitation cycles. Based on their spectroscopic fingerprints, these centres are identified as silicon vacancies, which can potentially be used as qubits, spin sensors and maser amplifiers.
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Submitted 25 July, 2014;
originally announced July 2014.
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Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
Authors:
H. Kraus,
V. A. Soltamov,
F. Fuchs,
D. Simin,
A. Sperlich,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2…
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Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of -1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.
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Submitted 30 March, 2014;
originally announced March 2014.
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Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
Authors:
T. C. Hain,
F. Fuchs,
V. A. Soltamov,
P. G. Baranov,
G. V. Astakhov,
T. Hertel,
V. Dyakonov
Abstract:
We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We establish the excitation profile for optical pumping of these defects and evaluate the optimum excitation wavelength of 770 nm. We also measure the photoluminesc…
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We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We establish the excitation profile for optical pumping of these defects and evaluate the optimum excitation wavelength of 770 nm. We also measure the photoluminescence dynamics at room temperature and find a monoexponential decay with a characteristic lifetime of 6.1 ns. The integrated photoluminescence intensity depends linear on the excitation power density up to 20 kW/cm$^2$, indicating a relatively small absorption cross section of these defects.
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Submitted 1 April, 2014; v1 submitted 10 March, 2014;
originally announced March 2014.
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Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states
Authors:
Pavel G. Baranov,
Victor A. Soltamov,
Alexandra A. Soltamova,
Georgy V. Astakhov,
Vladimir V. Dyakonov
Abstract:
The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the diamond. Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) investigations presented here suggest that silicon vacancy (VSi) r…
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The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the diamond. Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) investigations presented here suggest that silicon vacancy (VSi) related point defects in SiC possess properties the similar to those of the NV center in diamond, which in turn make them a promising quantum system for single-defect and single-photon spectroscopy in the infrared region. Depending on the defect type, temperature, SiC polytype, and crystalline position, two opposite schemes have been observed for the optical alignment of the ground state spin sublevels population of the VSi-related defects upon irradiation with unpolarized light. Spin ensemble of VSi-related defects are shown to be prepared in a coherent superposition of the spin states even at room temperature. Zero-field ODMR shows the possibility to manipulate of the ground state spin population by applying radiofrequency field. These altogether make VSi-related defects in SiC very favorable candidate for spintronics, quantum information processing, and magnetometry.
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Submitted 9 January, 2013;
originally announced January 2013.
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Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared
Authors:
F. Fuchs,
V. A. Soltamov,
S. Vaeth,
P. G. Baranov,
E. N. Mokhov,
G. V. Astakhov,
V. Dyakonov
Abstract:
Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a s…
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Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in visible and near infrared (NIR), associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.
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Submitted 12 December, 2012;
originally announced December 2012.
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Room temperature electrically tunable broadband terahertz Faraday effect
Authors:
Alexey Shuvaev,
Andrei Pimenov,
Georgy V. Astakhov,
Mathias Mühlbauer,
Christoph Brüne,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
The terahertz (THz) frequency range (0.1-10 THz) fills the gap between the microwave and optical parts of the electromagnetic spectrum. Recent progress in the generation and detection of the THz radiation has made it a powerful tool for fundamental research and resulted in a number of applications. However, some important components necessary to effectively manipulate THz radiation are still missi…
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The terahertz (THz) frequency range (0.1-10 THz) fills the gap between the microwave and optical parts of the electromagnetic spectrum. Recent progress in the generation and detection of the THz radiation has made it a powerful tool for fundamental research and resulted in a number of applications. However, some important components necessary to effectively manipulate THz radiation are still missing. In particular, active polarization and phase control over a broad THz band would have major applications in science and technology. It would, e.g., enable high-speed modulation for wireless communications and real-time chiral structure spectroscopy of proteins and DNA. In physics, this technology can be also used to precisely measure very weak Faraday and Kerr effects, as required, for instance, to probe the electrodynamics of topological insulators. Phase control of THz radiation has been demonstrated using various approaches. They depend either on the physical dimensions of the phase plate (and hence provide a fixed phase shift) or on a mechanically controlled time delay between optical pulses (and hence prevent fast modulation). Here, we present data that demonstrate the room temperature giant Faraday effect in HgTe can be electrically tuned over a wide frequency range (0.1-1 THz). The principle of operation is based on the field effect in a thin HgTe semimetal film. These findings together with the low scattering rate in HgTe open a new approach for high-speed amplitude and phase modulation in the THz frequency range.
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Submitted 23 November, 2012;
originally announced November 2012.
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Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
Authors:
D. Riedel,
F. Fuchs,
H. Kraus,
S. Vaeth,
A. Sperlich,
V. Dyakonov,
A. A. Soltamova,
P. G. Baranov,
V. A. Ilyin,
G. V. Astakhov
Abstract:
Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quan…
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Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.
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Submitted 1 October, 2012;
originally announced October 2012.
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Terahertz Quantum Hall Effect in a Topological Insulator
Authors:
A. M. Shuvaev,
G. V. Astakhov,
G. Tkachov,
C. Brüne,
H. Buhmann,
L. W. Molenkamp,
A. Pimenov
Abstract:
Using THz spectroscopy in external magnetic fields we investigate the low-temperature charge dynamics of strained HgTe, a three dimensional topological insulator. From the Faraday rotation angle and ellipticity a complete characterization of the charge carriers is obtained, including the 2D density, the scattering rate and the Fermi velocity. The obtained value of the Fermi velocity provides furth…
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Using THz spectroscopy in external magnetic fields we investigate the low-temperature charge dynamics of strained HgTe, a three dimensional topological insulator. From the Faraday rotation angle and ellipticity a complete characterization of the charge carriers is obtained, including the 2D density, the scattering rate and the Fermi velocity. The obtained value of the Fermi velocity provides further evidence for the Dirac character of the carriers in the sample. In resonator experiments, we observe quantum Hall oscillations at THz frequencies. The 2D density estimated from the period of these oscillations agrees well with direct transport experiments on the topological surface state. Our findings open new avenues for the studies of the finite-frequency quantum Hall effect in topological insulators.
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Submitted 6 August, 2012;
originally announced August 2012.
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Surface state charge dynamics of a high-mobility three dimensional topological insulator
Authors:
Jason N. Hancock,
J. L. M. van Mechelen,
Alexey B. Kuzmenko,
Dirk van der Marel,
Cristoph Brüne,
Elina G. Novik,
Georgy V. Astakhov,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
We present a magneto-optical study of the three-dimensional topological insulator, strained HgTe using a technique which capitalizes on advantages of time-domain spectroscopy to amplify the signal from the surface states. This measurement delivers valuable and precise information regarding the surface state dispersion within <1 meV of the Fermi level. The technique is highly suitable for the pursu…
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We present a magneto-optical study of the three-dimensional topological insulator, strained HgTe using a technique which capitalizes on advantages of time-domain spectroscopy to amplify the signal from the surface states. This measurement delivers valuable and precise information regarding the surface state dispersion within <1 meV of the Fermi level. The technique is highly suitable for the pursuit of the topological magnetoelectric effect and axion electrodynamics.
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Submitted 5 October, 2011; v1 submitted 4 May, 2011;
originally announced May 2011.
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Magnetic field-induced exchange effects between Mn ions and free carriers in ZnSe quantum well through the intermediate nonmagnetic barrier studied by photoluminescence
Authors:
D. M. Zayachuk,
T. Slobodskyy,
G. V. Astakhov,
A. Slobodskyy,
C. Gould,
G. Schmidt,
W. Ossau,
L. W. Molenkamp
Abstract:
Photoluminescence (PL) of the 50 nm $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$/ $d$ nm $Zn_{0.943}Be_{0.057}Se$/ 2.5 nm $ZnSe$/ 30 nm $Zn_{0.943}Be_{0.057}Se$ structures is investigated as a function of magnetic field ($B$) and thickness ($d$) of intermediate $Zn_{0.943}Be_{0.057}Se$ nonmagnetic barrier between the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ semimagnetic barrier and $ZnSe$ quantum well at the temperature…
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Photoluminescence (PL) of the 50 nm $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$/ $d$ nm $Zn_{0.943}Be_{0.057}Se$/ 2.5 nm $ZnSe$/ 30 nm $Zn_{0.943}Be_{0.057}Se$ structures is investigated as a function of magnetic field ($B$) and thickness ($d$) of intermediate $Zn_{0.943}Be_{0.057}Se$ nonmagnetic barrier between the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ semimagnetic barrier and $ZnSe$ quantum well at the temperature 1.2 K. The rate of the shift of different PL bands of the structures under study is estimated in low and high magnetic fields. The causes of the shift rate increase under pass from low to high magnetic fields are interpreted. The peculiarities of the effect of the intermediate barrier on the luminescence properties of the structures are presented. It is shown that deformation of adjacent layers by the barrier plays a crucial role in the formation of these properties, especially in forming the $Mn$ complexes in the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ layer. The change of the band gap as well as of the donor and acceptor levels energies under the effect of biaxial compression of the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ layer by the $Zn_{0.943}Be_{0.057}Se$ are estimated. It is concluded that the $Zn_{0.943}Be_{0.057}Se$ intermediate barrier also appreciably changes the effect of giant Zeeman splitting of the semimagnetic $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ barrier energy levels on the movement of the energy levels of $ZnSe$ quantum well in a magnetic field and on polarization of the quantum well exciton emission.
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Submitted 7 January, 2011; v1 submitted 31 December, 2010;
originally announced January 2011.
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Interaction between Mn Ions and Free Carriers in Quantum Wells with Asymmetrical Semimagnetic Barriers
Authors:
D. M. Zayachuk,
T. Slobodskyy,
G. V. Astakhov,
C. Gouldınst,
G. Schmidt,
W. Ossau,
L. W. Molenkamp
Abstract:
Investigations of photoluminescence (PL) in the magnetic field of quantum structures based on the ZnSe quantum well with asymmetrical ZnBeMnSe and ZnBeSe barriers reveal that the introduction of Be into semimagnetic ZnMnSe causes a decrease of the exchange integrals for conductive and valence bands as well as the forming of a complex based on Mn, degeneration of an energy level of which with the e…
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Investigations of photoluminescence (PL) in the magnetic field of quantum structures based on the ZnSe quantum well with asymmetrical ZnBeMnSe and ZnBeSe barriers reveal that the introduction of Be into semimagnetic ZnMnSe causes a decrease of the exchange integrals for conductive and valence bands as well as the forming of a complex based on Mn, degeneration of an energy level of which with the energy levels of the V band of ZnBeMnSe or ZnSe results in spin-flip electron transitions.
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Submitted 8 September, 2010;
originally announced September 2010.
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Local control of spin flow in weak magnetic fields
Authors:
J. -H. Quast,
G. V. Astakhov,
W. Ossau,
L. W. Molenkamp,
J. Heinrich,
S. Hofling,
A. Forchel
Abstract:
We demonstrate that optical illumination strongly influences spin transport in n-type GaAs. Specifically, increasing the power density of optical spin pumping results in a significant expansion of the spin diffusion profile. A further means of manipulation is the application of a weak transverse magnetic field, which strongly increases spin flow out of the excitation spot. These effects are dire…
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We demonstrate that optical illumination strongly influences spin transport in n-type GaAs. Specifically, increasing the power density of optical spin pumping results in a significant expansion of the spin diffusion profile. A further means of manipulation is the application of a weak transverse magnetic field, which strongly increases spin flow out of the excitation spot. These effects are directly monitored in spin imaging experiments and spatially resolved Hanle measurements.
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Submitted 24 October, 2008;
originally announced October 2008.
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Non-thermal photocoercivity effect in a ferromagnetic semiconductor
Authors:
G. V. Astakhov,
H. Hoffmann,
V. L. Korenev,
T. Kiessling,
J. Schwittek,
G. M. Schott,
C. Gould,
W. Ossau,
K. Brunner,
L. W. Molenkamp
Abstract:
We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a m…
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We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.
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Submitted 22 October, 2008;
originally announced October 2008.
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Time-resolved and continuous-wave optical spin pumping of semiconductor quantum wells
Authors:
G. V. Astakhov,
M. M. Glazov,
D. R. Yakovlev,
E. A. Zhukov,
W. Ossau,
L. W. Molenkamp,
M. Bayer
Abstract:
Experimental and theoretical studies of all-optical spin pump and probe of resident electrons in CdTe/(Cd,Mg)Te semiconductor quantum wells are reported. A two-color Hanle-MOKE technique (based on continuous-wave excitation) and time-resolved Kerr rotation in the regime of resonant spin amplification (based on pulsed excitation) provide a complementary measure of electron spin relaxation time. I…
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Experimental and theoretical studies of all-optical spin pump and probe of resident electrons in CdTe/(Cd,Mg)Te semiconductor quantum wells are reported. A two-color Hanle-MOKE technique (based on continuous-wave excitation) and time-resolved Kerr rotation in the regime of resonant spin amplification (based on pulsed excitation) provide a complementary measure of electron spin relaxation time. Influence of electron localization on long-lived spin coherence is examined by means of spectral and temperature dependencies. Various scenarios of spin polarization generation (via the trion and exciton states) are analyzed and difference between continuous-wave and pulsed excitations is considered. Effects related to inhomogeneous distribution of $g$-factor and anisotropic spin relaxation time on measured quantities are discussed.
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Submitted 23 July, 2008;
originally announced July 2008.
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Suppression of electron spin relaxation in Mn-doped GaAs
Authors:
G. V. Astakhov,
R. I. Dzhioev,
K. V. Kavokin,
V. L. Korenev,
M. V. Lazarev,
M. N. Tkachuk,
Yu. G. Kusrayev,
T. Kiessling,
W. Ossau,
L. W. Molenkamp
Abstract:
We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter the a…
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We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.
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Submitted 1 October, 2007;
originally announced October 2007.
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Bound magnetic polarons in the very dilute regime
Authors:
Yu. G. Kusrayev,
K. V. Kavokin,
G. V. Astakhov,
W. Ossau,
L. W. Molenkamp
Abstract:
We study bound magnetic polarons (BMP) in a very diluted magnetic semiconductor CdMnTe by means of site selective spectroscopy. In zero magnetic field we detect a broad and asymmetric band with a characteristic spectral width of about 5 meV. When external magnetic fields are applied a new line appears in the emission spectrum. Remarkably, the spectral width of this line is reduced greatly down t…
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We study bound magnetic polarons (BMP) in a very diluted magnetic semiconductor CdMnTe by means of site selective spectroscopy. In zero magnetic field we detect a broad and asymmetric band with a characteristic spectral width of about 5 meV. When external magnetic fields are applied a new line appears in the emission spectrum. Remarkably, the spectral width of this line is reduced greatly down to 0.24 meV. We attribute such unusual behavior to the formation of BMP, effected by sizable fluctuations of local magnetic moments. The modifications of the optical spectra have been simulated by the Monte-Carlo method and calculated within an approach considering the nearest Mn ion. A quantitative agreement with the experiment is achieved without use of fitting parameters. It is demonstrated that the low-energy part of the emission spectra originates from the energetic relaxation of a complex consisting of a hole and its nearest Mn ion. It is also shown that the contribution to the narrow line arises from the remote Mn ions.
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Submitted 14 September, 2007;
originally announced September 2007.
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Exciton spin decay modified by strong electron-hole exchange interaction
Authors:
G. V. Astakhov,
A. V. Koudinov,
K. V. Kavokin,
I. S. Gagis,
Yu. G. Kusrayev,
W. Ossau,
L. W. Molenkamp,
G. Karczewski,
T. Wojtowicz,
J. Kossut
Abstract:
We study exciton spin decay in the regime of strong electron-hole exchange interaction. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum…
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We study exciton spin decay in the regime of strong electron-hole exchange interaction. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum wells. The calculations provide a consistent description of the experimental results, which is supported by independent measurements of the parameters entering the model.
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Submitted 19 September, 2006;
originally announced September 2006.
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Optical spin pumping of modulation doped electrons probed by a two-color Kerr rotation technique
Authors:
H. Hoffmann,
G. V. Astakhov,
T. Kiessling,
W. Ossau,
G. Karczewski,
T. Wojtowicz,
J. Kossut,
L. W. Molenkamp
Abstract:
We report on optical spin pumping of modulation electrons in CdTe-based quantum wells with low intrinsic electron density (by 10^10 cm^{-2}). Under continuous wave excitation, we reach a steady state accumulated spin density of about 10^8 cm^{-2}. Using a two-color Hanle-MOKE technique, we find a spin relaxation time of 34 ns for the localized electrons in the nearly unperturbed electron gas. In…
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We report on optical spin pumping of modulation electrons in CdTe-based quantum wells with low intrinsic electron density (by 10^10 cm^{-2}). Under continuous wave excitation, we reach a steady state accumulated spin density of about 10^8 cm^{-2}. Using a two-color Hanle-MOKE technique, we find a spin relaxation time of 34 ns for the localized electrons in the nearly unperturbed electron gas. Independent variation of the pump and probe energies demonstrates the presence of additional non-localized electrons in the quantum well, whose spin relaxation time is substantially shorter.
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Submitted 15 June, 2006;
originally announced June 2006.
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Anomalous in-plane magneto-optical anisotropy of self-assembled quantum dots
Authors:
T. Kiessling,
A. V. Platonov,
G. V. Astakhov,
T. Slobodskyy,
S. Mahapatra,
W. Ossau,
G. Schmidt,
K. Brunner,
L. W. Molenkamp
Abstract:
We report on a complex nontrivial behavior of the optical anisotropy of quantum dots that is induced by a magnetic field in the plane of the sample. We find that the optical axis either rotates in the opposite direction to that of the magnetic field or remains fixed to a given crystalline direction. A theoretical analysis based on the exciton pseudospin Hamiltonian unambiguously demonstrates tha…
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We report on a complex nontrivial behavior of the optical anisotropy of quantum dots that is induced by a magnetic field in the plane of the sample. We find that the optical axis either rotates in the opposite direction to that of the magnetic field or remains fixed to a given crystalline direction. A theoretical analysis based on the exciton pseudospin Hamiltonian unambiguously demonstrates that these effects are induced by isotropic and anisotropic contributions to the heavy-hole Zeeman term, respectively. The latter is shown to be compensated by a built-in uniaxial anisotropy in a magnetic field B_c = 0.4 T, resulting in an optical response typical for symmetric quantum dots.
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Submitted 12 January, 2006;
originally announced January 2006.