Condensed Matter > Materials Science
[Submitted on 11 May 2022 (v1), last revised 20 May 2022 (this version, v2)]
Title:Layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr
View PDFAbstract:Magnetic van der Waals (vdW) materials offer a fantastic platform to investigate and exploit rich spin configurations stabilized in reduced dimensions. One tantalizing magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal a pronounced odd-even layer effect of interlayer reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic reorientation engineered by magnetic field in the air-stable semiconductor, which could contribute to future vdW spintronic devices.
Submission history
From: Chen Ye [view email][v1] Wed, 11 May 2022 12:55:59 UTC (1,164 KB)
[v2] Fri, 20 May 2022 04:43:29 UTC (1,224 KB)
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