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Computer Science > Information Theory

arXiv:2202.06367 (cs)
[Submitted on 13 Feb 2022]

Title:Information Density in Multi-Layer Resistive Memories

Authors:Susanna E. Rumsey (1), Stark C. Draper (1), Frank R. Kschischang (1) ((1) Department of Electrical and Computer Engineering, University of Toronto)
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Abstract:Resistive memories store information in a crossbar arrangement of two-terminal devices that can be programmed to patterns of high or low resistance. While extremely compact, this technology suffers from the "sneak-path" problem: certain information patterns cannot be recovered, as multiple low resistances in parallel make a high resistance indistinguishable from a low resistance. In this paper, a multi-layer device is considered, and the number of bits it can store is derived exactly and asymptotic bounds are developed. The information density of a series of isolated arrays with extreme aspect ratios is derived in the single- and multi-layer cases with and without peripheral selection circuitry. This density is shown to be non-zero in the limit, unlike that of the arrays with moderate aspect ratios previously considered. A simple encoding scheme that achieves capacity asymptotically is presented.
Subjects: Information Theory (cs.IT)
ACM classes: E.4; H.1.1
Cite as: arXiv:2202.06367 [cs.IT]
  (or arXiv:2202.06367v1 [cs.IT] for this version)
  https://doi.org/10.48550/arXiv.2202.06367
Journal reference: in IEEE Transactions on Information Theory, vol. 67, no. 3, pp. 1446-1460, March 2021
Related DOI: https://doi.org/10.1109/TIT.2020.3040255

Submission history

From: Susanna Rumsey [view email]
[v1] Sun, 13 Feb 2022 17:31:32 UTC (509 KB)
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