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Condensed Matter > Materials Science

arXiv:1612.06798 (cond-mat)
[Submitted on 20 Dec 2016]

Title:Formation of a p-n junction on the GaAs-surface by an Ar+ ion beam

Authors:V.M. Mikoushkin, V.V. Bryzgalov, S.Yu. Nikonov, A.P. Solonitsyna, D.E. Marchenko
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Abstract:The core-level and valence band electronic structure of the well-defined near-surface layer of n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy before and after modification of the layer by an Ar+ ion beam in the 1.5 - 2.5 keV energy range. Conversion of the conductivity type from n into p has been revealed in the irradiated layer several nm thick. The effect manifests itself in shifts of the core-levels and valence band edge by the value comparable to the bandgap width. Transformation on the conductivity type has been assumed to be caused by Ga-antisite point defects generated by ion bombardment. The possibility of local formation of a p-n nanojunction within the ion-beam spot has been shown.
Comments: 10 pages, 5 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1612.06798 [cond-mat.mtrl-sci]
  (or arXiv:1612.06798v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1612.06798

Submission history

From: Valery Mikoushkin [view email]
[v1] Tue, 20 Dec 2016 18:37:50 UTC (433 KB)
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