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1.
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Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
/ Termo, G (CERN ; Ecole Polytechnique, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (Ecole Polytechnique, Lausanne) ; Sallese, J M (Ecole Polytechnique, Lausanne)
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over time. As of 2014, 22 chips from 3 different fabs in 130 nm CMOS technology and 11 chips from 2 different fabs in 65 nm CMOS technology have been irradiated to ultra-high doses, ranging from 100 Mrad(SiO$_{2}$) to 1 Grad(SiO$_{2}$). [...]
2023 - 9 p.
- Published in : JINST
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01061
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2.
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A study of radiation effects on LuAG:Ce(Pr) co-activated with Ca
/ Petrosyan, A G (Ashtarak, IPR) ; Ovanesyan, K L (Ashtarak, IPR) ; Derdzyan, M V (Ashtarak, IPR) ; Ghambaryan, I (Ashtarak, IPR) ; Patton, G (Lyon, LPCML) ; Moretti, F (Lyon, LPCML) ; Auffray, E (CERN) ; Lecoq, P (CERN) ; Lucchini, M (CERN) ; Pauwels, K (CERN) et al.
Single crystals of LuAG:Ce co-doped with Ca2+ were grown by the vertical Bridgman method and studied for optical properties, γ-irradiation induced absorption, scintillation light yield and decay. It is shown that addition of Ca2+ may efficiently limit the radiation induced absorption associated with presence of trace amounts of Yb. [...]
2015 - 6 p.
- Published in : J. Cryst. Growth 430 (2015) 46-51
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3.
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4.
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5.
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Radiation test of commercial of the shelf (COTS) optical transceivers in the frame of the beam position monitor (BPM) consolidation project for the Large Hadron Collider (LHC)
/ Marin, M Barros (CERN) ; Boccardi, A (CERN) ; Ozdogan, S Can (CERN) ; Danzeca, S (CERN) ; Ferraro, R (CERN) ; Scialdone, A (CERN)
The consolidation of the Large Hadron Collider (LHC) beam position monitor (BPM) requires the deployment of about 5000 single-mode radiation-tolerant optical transmitters, working at 10 Gbps during 20 years of operation. While the use of the custom devices being designed at CERN remains the baseline for the project, 8 commercial of the shelf (COTS) optical transceivers have been evaluated as an alternative. [...]
2024 - 9 p.
- Published in : JINST 19 (2024) C03040
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03040
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6.
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Digital duty-cycle correction circuit for clock paths in radiation-tolerant high-speed wireline transmitters
/ Klekotko, A (Leuven U. ; CERN) ; Baszczyk, M (CERN) ; Biereigel, S (CERN) ; Kulis, S (CERN) ; Martina, F (CERN) ; Moreira, P (CERN) ; Tavernier, F (Leuven U.) ; Prinzie, J (Leuven U.)
Ongoing developments in the field of radiation-toleranthigh-speed transmitters (HSTs)aim at increasing thedata rates above 25 Gb/s while increasingtotal ionizing dose (TID)tolerance above 1 Grad. The use of half-ratearchitectures imposes tight constraints on clock signal quality, in particular itsduty-cycle. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C02030
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C02030
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7.
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Using Software Mitigation Schemes to improve the availability of IoT applications in harsh radiation environment
/ Zimmaro, A (CERN ; IES, Montpellier) ; Ferraro, R (CERN) ; Boch, J (IES, Montpellier) ; Saigne, F (IES, Montpellier) ; Masi, A (CERN) ; Danzeca, S (CERN)
The integration of IoT infrastructure in the context of particle accelerators promises numerous benefits (reduced costs and maintenance time, increased deployment). However, the use of microcontroller units (MCUs), typical of IoT systems, can potentially compromise future accelerator availability performances. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C02059
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C02059
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8.
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CMOS SPADs for High Radiation Environments
/ Wu, Ming-Lo (Ecole Polytechnique, Lausanne) ; Gramuglia, Francesco (Ecole Polytechnique, Lausanne) ; Ripiccini, Emanuele (Ecole Polytechnique, Lausanne) ; Fenoglio, Carlo Alberto (Ecole Polytechnique, Lausanne) ; Kizilkan, Ekin (Ecole Polytechnique, Lausanne) ; Keshavarzian, Pouyan (Ecole Polytechnique, Lausanne) ; Morimoto, Kazuhiro (Ecole Polytechnique, Lausanne) ; Paolozzi, Lorenzo (Geneva U. ; CERN) ; Bruschini, Claudio (Ecole Polytechnique, Lausanne) ; Charbon, Edoardo (Ecole Polytechnique, Lausanne)
We first characterized large 180 nm CMOS single-photon avalanche diode (SPAD) imagers under 10 and 100 MeV protons irradiation up to a displacement damage dose of 1 PeV/g. [...]
2022. - 3 p.
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9.
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Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator
/ Termo, Gennaro (CERN ; LPHE, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Kloukinas, Kostas (CERN) ; Caselle, Michele (KIT, Karlsruhe) ; Elsenhans, Alexander Friedrich (KIT, Karlsruhe) ; Ulusoy, Ahmet Cagri (KIT, Karlsruhe) ; Koukab, Adil (LPHE, Lausanne) ; Sallese, Jean-Michel (LPHE, Lausanne)
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_{2}$) with different back-gate bias configurations, from -8 V to 2 V. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C03039
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03039
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10.
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Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector
/ ATLAS Collaboration
Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. [...]
arXiv:2407.05716; CERN-EP-2024-156.-
Geneva : CERN, 2024-10-04 - 42 p.
- Published in : JINST 19 (2024) P10008
Fulltext: ANA-PIXE-2023-02-PAPER - PDF; 2407.05716 - PDF; document - PDF; External link: Previous draft version
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