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Modeling of an integrated active feedback preamplifier in a 025 mu m CMOS technology at cryogenic temperatures / Saramad, Shahyar ; Anelli, G ; Bucher, M ; Despeisse, Matthieu ; Jarron, Pierre ; Pelloux, Nicolas ; Rivetti, A
This paper describes the modeling of a standard 0.25 mu m CMOS technology at cryogenic temperatures. In the first step of the work, the parameters of the EKV v2.6 model were extracted at different temperatures (300, 150, and 70 K). [...]
2003 - Published in : IEEE Trans. Nucl. Sci. 50 (2003) 1290-6 IEEE Published version, local copy: PDF;

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A high-speed low-noise transimpedance amplifier in a 025 mum CMOS technology / Anelli, G ; Borer, K ; Casagrande, L ; Despeisse, Matthieu ; Jarron, Pierre ; Pelloux, Nicolas ; Saramad, Shahyar
We present the simulated and measured performance of a transimpedance amplifier designed in a quarter micron CMOS process. Containing only NMOS and PMOS devices, this amplifier can be integrated in any submicron CMOS process. [...]
2003 - Published in : Nucl. Instrum. Methods Phys. Res., A 512 (2003) 117-128

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2	Saramad, S
3	Saramad, S.

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