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TCT-based monitoring of LGAD radiation hardness for ATLAS-HGTD production
/ Velkovska, I. (Stefan Inst., Ljubljana ; Ljubljana U.) ; Aboulhorma, A. (Rabat U.) ; Tamlihat, M. Ait (Rabat U.) ; Alfanda, H.M. (Shanghai Jiao Tong U. ; Shanghai Jiaotong U. ; KLPAC, Shanghai) ; Atanova, O. (Unlisted) ; Atanov, N. (Unlisted) ; Azzouzi, I. (Mohammed V U., Agdal) ; da Costa, J. Barreiro Guimarães (Beijing, Inst. High Energy Phys.) ; Beau, T. (LPNHE, Paris) ; Benchekroun, D. (Hassan U., II, Ain Chock) et al.
Production of the High Granularity Timing Detector for the ATLAS experiment at High Luminosity LHC requires over 21000 silicon sensors based on Low Gain Avalanche Diode (LGAD) technology. [...]
arXiv:2509.09187.
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X-ray irradiation studies on the Monopix DMAPS in 150 nm and 180 nm
/ Bespin, Christian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U. ; Unlisted, CH) ; Hirono, Toko (Bonn U. ; Unlisted, CH) ; Krüger, Hans (Bonn U.) et al.
Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies facilitate depletion of the charge sensitive volume. [...]
arXiv:2506.04776.-
2025-06-13 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1080 (2025) 170704
Fulltext: 2506.04776 - PDF; publication - PDF; document - PDF;
In : 17th Vienna Conference on Instrumentation (VCI2025), Vienna, Austria, 17 - 21 Feb 2025, pp.170704
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Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS
/ Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p.
- Published in : JPS Conf. Proc. 42 (2024) 011021
Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
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Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS)
/ Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007
Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
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Latest Developments and Results of Radiation Tolerance CMOS Sensors with Small Collection Electrodes
/ Tortajada, I Asensi (CERN ; Valencia U.) ; Allport, P (Birmingham U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN ; Zagreb U., Phys. Dept.) ; Bespin, C (Bonn U.) ; Bhat, S (Marseille, CPPM) ; Bortoletto, D (Oxford U. ; JAI, UK) ; Breugnon, P (Marseille, CPPM) ; Buttar, C (Glasgow U.) et al.
This contribution will present the latest developments after the MALTA and Mini-MALTA sensors. It will illustrate the improvements and results of the Czochralski substrate with a bigger depletion zone to improve efficiency. [...]
2021 - 8 p.
- Published in : JPS Conf. Proc. 34 (2021) 010009
Fulltext: PDF;
In : 29th International Workshop on Vertex Detectors, Virtual, Japan, 5 - 8 Oct 2020, pp.010009
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Progress in DMAPS developments and first tests of the Monopix2 chips in 150 nm LFoundry and 180 nm TowerJazz technology
/ Dingfelder, J (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Degerli, Y (IRFU, Saclay) ; Flores Sanz de Acedo, L (CERN) et al.
Depleted Monolithic Active Pixel Sensors (DMAPS) are monolithic pixel detectors with high-resistivity substrates designed for use in high-rate and high-radiation environments. They are produced in commercial CMOS processes, resulting in relatively low production costs and short turnaround times, and offer a low material budget. [...]
2022 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1034 (2022) 166747
In : 30th International Workshop on Vertex Detectors (VERTEX 2021), Online, UK, 27 - 30 Sep 2021, pp.166747
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Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies
/ Wang, T (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Bhat, S (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Chen, Z (Marseille, CPPM) et al.
The monolithic CMOS pixel sensor for charged particle tracking has already become a mainstream technology in high energy particle physics (HEP) experiments. During the last decade, progressive improvements have been made for CMOS pixels to deal with the high-radiation and high-rate environments expected, for example, at the future High Luminosity LHC. [...]
SISSA, 2020 - 10 p.
- Published in : PoS Vertex2019 (2020) 026
Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.026
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Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC
/ Pernegger, H. (CERN) ; Allport, P. (Birmingham U.) ; Asensi Tortajada, I. (CERN ; Valencia U.) ; Barbero, M. (Marseille, CPPM) ; Barrillon, P. (Marseille, CPPM) ; Berdalovic, I. (CERN ; Zagreb U.) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Bortoletto, D. (Oxford U.) ; Breugnon, P. (Marseille, CPPM) et al.
The upgrade of the tracking detectors for the High Luminosity-LHC (HL-LHC) requires the development of novel radiation hard silicon sensors. The development of Depleted Monolithic Active Pixel Sensors targets the replacement of hybrid pixel detectors with radiation hard monolithic CMOS sensors. [...]
2021-01-11 - 7 p.
- Published in : Nucl. Instrum. Methods Res. Phys., A 986 (2021) 164381
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164381
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Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC
/ Barbero, M. (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Dingfelder, J. (Bonn U.) ; Godiot, Stephanie (Marseille, CPPM) et al.
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. [...]
arXiv:1911.01119.-
2020-05-22 - 22 p.
- Published in : JINST
Fulltext: PDF;
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Design of large scale sensors in 180 nm CMOS process modified for radiation tolerance
/ Flores Sanz de Acedo, L (CERN ; Glasgow U.) ; Asensi Tortajada, I (CERN ; Valencia U.) ; Barbero, M (Marseille, CPPM) ; Berdalovic, I (Zagreb U.) ; Bespin, C (Bonn U.) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Dachs, F (CERN) et al.
The last couple of years have seen the development of Depleted Monolithic Active Pixel Sensors (DMAPS) fabricated with a process modification to increase the radiation tolerance. Two large scale prototypes, Monopix with a column drain synchronous readout, and MALTA with a novel asynchronous architecture, have been fully tested and characterized both in the laboratory and in test beams. [...]
2020 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 980 (2020) 164403
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164403
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