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1.
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Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
/ Termo, G (CERN ; Ecole Polytechnique, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (Ecole Polytechnique, Lausanne) ; Sallese, J M (Ecole Polytechnique, Lausanne)
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over time. As of 2014, 22 chips from 3 different fabs in 130 nm CMOS technology and 11 chips from 2 different fabs in 65 nm CMOS technology have been irradiated to ultra-high doses, ranging from 100 Mrad(SiO$_{2}$) to 1 Grad(SiO$_{2}$). [...]
2023 - 9 p.
- Published in : JINST
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01061
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2.
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Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator
/ Termo, Gennaro (CERN ; LPHE, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Kloukinas, Kostas (CERN) ; Caselle, Michele (KIT, Karlsruhe) ; Elsenhans, Alexander Friedrich (KIT, Karlsruhe) ; Ulusoy, Ahmet Cagri (KIT, Karlsruhe) ; Koukab, Adil (LPHE, Lausanne) ; Sallese, Jean-Michel (LPHE, Lausanne)
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_{2}$) with different back-gate bias configurations, from -8 V to 2 V. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C03039
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03039
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3.
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Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
/ Termo, G (CERN ; LPHE, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (LPHE, Lausanne) ; Sallese, J M (LPHE, Lausanne)
The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluences is still unknown. [...]
2024 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1065 (2024) 169497
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4.
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High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities
/ Sriskaran, Viros (CERN) ; Alozy, Jerome (CERN) ; Ballabriga, Rafael (CERN) ; Campbell, Michael (CERN) ; Christodoulou, Pinelopi (CERN ; CTU, Prague) ; Heijne, Erik (CTU, Prague) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kugathasan, Thanushan (CERN) ; Llopart, Xavier (CERN) ; Piller, Markus (CERN ; Graz, Tech. U.) et al.
The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high-rate spectroscopic X-ray imaging using high-Z materials. It can be tiled on all 4 sides making it ideal for constructing large-area detectors with minimal dead area. [...]
arXiv:2310.10188.-
2024-02-16 - 15 p.
- Published in : JINST 19 (2024) P02024
Fulltext: 2310.10188 - PDF; Publication - PDF;
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5.
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A Beam Profile Monitor for High Energy Proton Beams Using Microfabrication Techniques
/ Mateu, Isidre (CERN) ; Bouvet, Didier (Ecole Polytechnique, Lausanne) ; Farabolini, Wilfrid (CERN) ; Gilardi, Antonio (CERN) ; Gkotse, Blerina (CERN) ; Mapelli, Alessandro (CERN) ; Meskova, Viktoria (CERN) ; Pezzullo, Giuseppe (CERN) ; Ravotti, Federico (CERN) ; Sallese, Jean-Michel (Ecole Polytechnique, Lausanne) et al.
In High Energy Physics experiments it is a common practice to expose electronic components and systems to particle beams, in order to assess their level of radiation tolerance when operating in a radiation environment. One of the facilities used for such tests is the Proton Irradiation Facility (IRRAD) at CERN. [...]
2020 - 4 p.
- Published in : 10.18429/JACoW-IBIC2020-TUPP37
Fulltext: PDF;
In : 9th International Beam Instrumentation Conference, Online, 14 - 18 Sep 2020, pp.TUPP37
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6.
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The IRRAD Proton Irradiation Facility Control, Data Management and Beam Diagnostic Systems: An Outlook of the Major Upgrades Beyond the CERN Long Shutdown 2
/ Ravotti, Federico (CERN) ; Gkotse, Blerina (CERN ; Paris, Ecole des Mines) ; Glaser, Maurice (CERN) ; Jouvelot, Pierre (Paris, Ecole des Mines) ; Mateu, Isidre (CERN) ; Meskova, Viktoria (CERN) ; Pezzullo, Giuseppe (CERN) ; Sallese, Jean-Michel (Ecole Polytechnique, Lausanne)
The IRRAD proton irradiation facility at CERN was built during the Long Shutdown 1 (LS1) to address the irradiation experiment needs of the community working for the High-Luminosity (HL) upgrade of the LHC. The present IRRAD is an upgrade of a historical service at CERN that, since the 90’s, exploits the high-intensity 24 GeV/c PS proton beam for radiation-hardness studies of detector, accelerator and semiconductor components and materials. [...]
2019 - 5 p.
- Published in : 10.18429/JACoW-ICALEPCS2019-WEPHA127
Fulltext: PDF;
In : 17th Biennial International Conference on Accelerator and Large Experimental Physics Control Systems (ICALEPCS), New York, United States, 5 - 11 Oct 2019, pp.WEPHA127
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7.
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New architecture for the analog front-end of Medipix4
/ Sriskaran, V (CERN ; Ecole Polytechnique, Lausanne) ; Alozy, J (CERN) ; Ballabriga, R (CERN) ; Campbell, M (CERN) ; Egidos, N (CERN) ; Fernandez-Tenllado, J M (CERN) ; Heijne, E (CERN ; IEAP CTU, Prague) ; Kremastiotis, I (CERN) ; Koukab, A (Ecole Polytechnique, Lausanne) ; Llopart, X (CERN) et al.
The Medipix4 chip is the latest member of the family of Medipix pixel detector readout chips aimed at high rate spectroscopic X-ray imaging. Unlike its predecessors, it will be possible to tile the chip on all 4 sides permitting seamless large area coverage. [...]
2020
- Published in : Nucl. Instrum. Methods Phys. Res., A 978 (2020) 164412
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164412
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8.
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9.
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Metal Thin-film Dosimetry Technology for the Ultra-high Particle Fluence Environment of the Future Circular Collider At CERN
/ Gorine, Georgi (CERN, EPFL) ; Pezzullo, Giuseppe (CERN) ; Moll, Michael (CERN) ; Capeans, Mar (CERN) ; Väyrynen, Katja (University of Helsinki) ; Ritala, Mikko (University of Helsinki) ; Bouvet, Didier (EPFL) ; Ravotti, Federico (CERN) ; Sallese, Jean-Michel (EPFL)
The Future Circular Collider (FCC) design study aims to assess the physics potential and technical feasibility of a new synchrotron accelerator expected to reach an energy level of 100 TeV colliding proton beams circulating in a 100 km tunnel located in the Geneva area in Switzerland. Inside the FCC detectors, over the 10 years of scheduled operation, unprecedented radiation levels will presumably exceed several tens of MGy with more than 10^17 particles/cm^2. [...]
AIDA-2020-PUB-2018-013.-
Geneva : CERN, 2018
- Published in : Radiation and Applications Journal 3 (2018) 172-177
Fulltext: PDF;
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10.
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Transient current technique for charged traps detection in silicon bonded interfaces
/ Bronuzzi, J (CERN ; Ecole Polytechnique, Lausanne) ; Bouvet, D. (Ecole Polytechnique, Lausanne) ; Charrier, C. (CEA-DTA-LETI, Grenoble) ; Fournel, F. (CEA-DTA-LETI, Grenoble) ; García, M.F. (CERN ; Cantabria Inst. of Phys.) ; Mapelli, A. (CERN) ; Moll, M. (CERN) ; Rouchouze, E. (CEA-DTA-LETI, Grenoble) ; Sallese, J.M. (Ecole Polytechnique, Lausanne)
Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, micro-electromechanical systems (MEMS) and microfluidic devices. Low temperature direct bonding techniques can be of particular interest for the fabrication of monolithic radiation sensors. [...]
2019
- Published in : AIP Adv. 9 (2019) 025307
Fulltext: PDF;
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