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Defects and acceptor removal in $^{60}$Co $\gamma$-irradiated $p$-type silicon / Himmerlich, Anja (CERN) ; Castelló-Mor, Núria (Cantabria Inst. of Phys.) ; Currás-Rivera, Esteban (CERN) ; Gurimskaya, Yana (CERN) ; Mateu, Isidre (CERN) ; Moll, Michael (CERN) ; Peters, Karol Pawel (CERN) ; Sorgenfrei, Niels (CERN ; Freiburg U., Inst. Phys. Chem.) ; Wiehe, Moritz (CERN) ; Nitescu, Andrei (Bucharest U.) et al.
Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect, known as the so-called Acceptor Removal Effect (ARE), depends on particle type, particle energy and radiation dose and is usually explained by the formation of boroninterstitial - oxygen-interstitial (BiOi) defects that induce a donor-type defect level in the upper part of the Si band gap. [...]
arXiv:2505.20790.- 2025-07-26 - 17 p. - Published in : Nucl.Instrum.Meth.A 1081 (2026) 170886 Fulltext: 2505.20790 - PDF; Published version - PDF;

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Detector R&D Collaboration for Solid-State detectors / Shi, X

et al.
Approved: 06 December 2023.-
Status: Preparation
Experiment: DRD3

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Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation / Liao, C. (Hamburg U.) ; Fretwurst, E. (Hamburg U.) ; Garutti, E. (Hamburg U.) ; Schwandt, J. (Hamburg U.) ; Pintilie, I. (Bucharest, IFIN-HH) ; Nitescu, A. ; Himmerlich, A. (CERN) ; Moll, M. (CERN) ; Gurimskaya, Y. (CERN) ; Li, Z. (Ludong U., Yantai)
In this work, the effects of $^\text{60}$Co $\gamma$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI2{\mega Gy}. [...]
arXiv:2306.15336.- 2024-01-13 - 13 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1061 (2024) 169103 Fulltext: PDF;

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The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes / Liao, C (Hamburg U.) ; Fretwurst, E (Hamburg U.) ; Garutti, E (Hamburg U.) ; Schwandt, J (Hamburg U.) ; Moll, M (CERN) ; Himmerlich, A (CERN) ; Gurimskaya, Y (Geneva U.) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Nitescu, A (Bucharest, Nat. Inst. Mat. Sci.) ; Li, Z (Ludong U., Yantai ; Zaozhuang U.) et al.
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV ( $E_{\text {kin}}$ ) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 °C for 0–180 min) followed by isochronal annealing (for 15 min between 100 °C and 190 °C in steps of 10 °C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50- $\Omega $ cm material after irradiation with 23-GeV protons to a fluence of $6.91\times 10^{13}\,\,{\text {p/cm}^{2}}$ [...]
2022 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 69 (2022) 576-586 External link: preprint

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Bistability of the BiOi complex and its implications on evaluating the “acceptor removal” process in p-type silicon / Besleaga, C. (Bucharest, Nat. Inst. Mat. Sci.) ; Kuncser, A. (Bucharest, Nat. Inst. Mat. Sci.) ; Nitescu, A. (Bucharest, Nat. Inst. Mat. Sci.) ; Kramberger, G. (Stefan Inst., Ljubljana) ; Moll, M. (CERN) ; Pintilie, I. (Bucharest, Nat. Inst. Mat. Sci.)
The dependencies of the B$_{i}$O$_{i}$ defect concentration on doping, irradiation fluence and particle type in p-type silicon diodes have been investigated. We evidenced that large data scattering occurs for fluences above $10^{12}$ 1 MeV neutrons/cm$^2$, becoming significant larger for higher fluences. [...]
arXiv:2102.06537.- 2021-11-21 - 9 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1017 (2021) 165809 Fulltext: PDF;

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Se också: liknande författarnamn
2	Nitescu, A.
1	Nitescu, Andrei

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