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Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors / Martínez, C ; Rafí, J M ; Lozano, M ; Campabadal, F ; Santander, J ; Fonseca, L ; Ullán, M ; Moreno, A J D
This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full depletion voltage and leakage current with fluence as well as their annealing behavior with time were studied. [...]
2002 - Published in : IEEE Trans. Nucl. Sci. 49 (2002) 1377-82

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