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1.
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Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation
/ Liao, C. (Hamburg U.) ; Fretwurst, E. (Hamburg U.) ; Garutti, E. (Hamburg U.) ; Schwandt, J. (Hamburg U.) ; Pintilie, I. (Bucharest, IFIN-HH) ; Nitescu, A. ; Himmerlich, A. (CERN) ; Moll, M. (CERN) ; Gurimskaya, Y. (CERN) ; Li, Z. (Ludong U., Yantai)
In this work, the effects of $^\text{60}$Co $\gamma$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI2{\mega Gy}. [...]
arXiv:2306.15336.-
2024-01-13 - 13 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1061 (2024) 169103
Fulltext: PDF;
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2.
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3.
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Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors
/ Himmerlich, Anja (CERN) ; Castello-Mor, Nuria (CERN) ; Rivera, Esteban Curras (CERN) ; Gurimskaya, Yana (CERN) ; Maulerova-Subert, Vendula (CERN ; Hamburg U.) ; Moll, Michael (CERN) ; Pintilie, Ioana (Bucharest U.) ; Fretwurst, Eckhart (Hamburg U.) ; Liao, Chuan (Hamburg U.) ; Schwandt, Jorn (Hamburg U.)
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect (ARE) a radiation-induced deactivation of active boron dopants takes place. [...]
arXiv:2209.07186.-
2022-12-22
- Published in : Nucl. Instrum. Methods Phys. Res., A 1048 (2023) 167977
Fulltext: PDF;
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4.
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The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
/ Liao, C (Hamburg U.) ; Fretwurst, E (Hamburg U.) ; Garutti, E (Hamburg U.) ; Schwandt, J (Hamburg U.) ; Moll, M (CERN) ; Himmerlich, A (CERN) ; Gurimskaya, Y (Geneva U.) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Nitescu, A (Bucharest, Nat. Inst. Mat. Sci.) ; Li, Z (Ludong U., Yantai ; Zaozhuang U.) et al.
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV (
$E_{\text {kin}}$
) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 °C for 0–180 min) followed by isochronal annealing (for 15 min between 100 °C and 190 °C in steps of 10 °C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50-
$\Omega $
cm material after irradiation with 23-GeV protons to a fluence of
$6.91\times 10^{13}\,\,{\text {p/cm}^{2}}$
[...]
2022 - 11 p.
- Published in : IEEE Trans. Nucl. Sci. 69 (2022) 576-586
External link: preprint
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5.
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Investigation of nitrogen enriched silicon for particle detectors
/ Hönig, J C (Freiburg U.) ; Baselga, M (DESY) ; Vignali, M Centis (CERN) ; Diehl, L (Freiburg U.) ; Dierlamm, A (Karlsruhe U.) ; Fretwurst, E (Hamburg U.) ; Kaminski, P (Warsaw, Inst. Electron. Mat. Tech.) ; Moll, M (CERN) ; Moos, F (Freiburg U.) ; Mori, R (Freiburg U.) et al.
This article explores the viability of nitrogen enriched silicon for particle physics application. For that purpose silicon diodes and strip sensors were produced using high resistivity float zone silicon, diffusion oxygenated float zone silicon, nitrogen enriched float zone silicon and magnetic Czochralski silicon. [...]
2020 - 13 p.
- Published in : JINST 15 (2020) P05006
Fulltext: PDF;
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6.
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Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
/ Gurimskaya, Yana (CERN) ; Dias De Almeida, Pedro (CERN ; Cantabria U., Santander) ; Fernandez Garcia, Marcos (Cantabria U., Santander) ; Mateu Suau, Isidre (CERN) ; Moll, Michael (CERN) ; Fretwurst, Eckhart (Hamburg U.) ; Makarenko, Leonid (Belarus State U.) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. [...]
Elsevier, 2020 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162221
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162221
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7.
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Radiation Hardness of Silicon Detectors for Applications in High-Energy Physics Experiments
/ Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Kuhnke, M (Hamburg U., Inst. Exp. Phys. II) ; Lindström, G (Hamburg U., Inst. Exp. Phys. II) ; Moll, M (CERN)
An overview of the radiation damage induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. The present knowledge on the deterioration of the detector performance caused by irradiation with neutrons and high energetic protons is described leading to an appropriate modeling of the macroscopic parameters under irradiation, i.e. [...]
2000 - 14 p.
- Published in : J. Optoelectron. Adv. Mat.: 2 (2000) , no. 5, pp. 575-588
External links: Fulltext; Fulltext
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8.
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Some annealing effects in proton irradiated silicon detectors
/ Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Petris, M (Bucharest, IFIN-HH) ; Tivarus, C (Bucharest, Nat. Inst. Mat. Sci.) ; Moll, M (Hamburg U.) ; Fretwurst, E (Hamburg U.) ; Lindstroem, G (Hamburg U.)
/RD48/ROSE
Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is $\phi_{eq}=1.82 \times 10^{13} \rm{cm}^{-2}$) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. [...]
2000 - 4 p.
- Published in : 10.1109/SMICND.2000.890231
In : 2000 International Semiconductor Conference : 23rd Edition, Sinaia, Romania, 10 - 14 Oct 2000, pp.259-262
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9.
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Lithium ion irradiation effects on epitaxial silicon detectors
/ Candelori, A (INFN, Padua ; Padua U.) ; Bisello, D (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Schramm, A (Hamburg U., Inst. Exp. Phys. II) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II) ; Wyss, J (Cassino U. ; INFN, Pisa)
Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in future very high luminosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. [...]
2004 - 7 p.
- Published in : IEEE Trans. Nucl. Sci. 51 (2004) 1766-1772
In : 13th IEEE-NPSS Real Time Conference 2003, Montreal, Canada, 18 - 23 May 2003, pp.1766-1772
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10.
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Radiation hardness of different silicon materials after high-energy electron irradiation
/ Dittongo, S (Trieste U. ; INFN, Trieste) ; Bosisio, L (Trieste U. ; INFN, Trieste) ; Ciacchi, M (Trieste U.) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; D'Auria, G (Sincrotrone Trieste) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II)
The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentration, the current related damage constant $\alpha$ and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated..
2004 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 530 (2004) 110-116
In : 6th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 29 Sep - 1 Oct 2003, pp.110-116
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