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1.
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Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
/ Termo, G (CERN ; Ecole Polytechnique, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (Ecole Polytechnique, Lausanne) ; Sallese, J M (Ecole Polytechnique, Lausanne)
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over time. As of 2014, 22 chips from 3 different fabs in 130 nm CMOS technology and 11 chips from 2 different fabs in 65 nm CMOS technology have been irradiated to ultra-high doses, ranging from 100 Mrad(SiO$_{2}$) to 1 Grad(SiO$_{2}$). [...]
2023 - 9 p.
- Published in : JINST
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01061
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2.
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Prototype measurement results in a 65 nm technology and TCAD simulations towards more radiation tolerant monolithic pixel sensors
/ Lemoine, C (CERN ; Strasbourg, IPHC) ; Aglieri Rinella, G (CERN) ; Baudot, J (Strasbourg, IPHC) ; Borghello, G (CERN) ; Carnesecchi, F (CERN) ; Hillemanns, H (CERN) ; Kluge, A (CERN) ; Kucharska, G (CERN) ; Leitao, P V (CERN) ; Mager, M (CERN) et al.
Early measurements on monolithic pixel sensor prototypes in the TPSCo 65 nm technology indicate a different response and radiation tolerance (up to5×10$^{15}$ 1 MeV n$_{eq}$ cm) for different sensor layout and process variants, illustrating the importance of layout and process in the path towards increased sensor radiation tolerance. Using these measurement results, TCAD simulations provide more insight to link the macroscopic behaviour of specific sensor variants to the details of its structure. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C02033
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C02033
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3.
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Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator
/ Termo, Gennaro (CERN ; LPHE, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Kloukinas, Kostas (CERN) ; Caselle, Michele (KIT, Karlsruhe) ; Elsenhans, Alexander Friedrich (KIT, Karlsruhe) ; Ulusoy, Ahmet Cagri (KIT, Karlsruhe) ; Koukab, Adil (LPHE, Lausanne) ; Sallese, Jean-Michel (LPHE, Lausanne)
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_{2}$) with different back-gate bias configurations, from -8 V to 2 V. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C03039
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03039
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4.
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Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
/ Termo, G (CERN ; LPHE, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (LPHE, Lausanne) ; Sallese, J M (LPHE, Lausanne)
The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluences is still unknown. [...]
2024 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1065 (2024) 169497
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5.
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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
/ Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436
Fulltext: PDF;
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6.
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DRD 7: Proposal for an R&D Collaboration on Electronics and On-Detector Processing
/ Baudot, Jerome (Centre National de la Recherche Scientifique (FR)) ; French, Marcus Julian (Science and Technology Facilities Council STFC (GB)) ; Kluit, Ruud (Nikhef National institute for subatomic physics (NL)) ; Rivetti, Angelo (Universita e INFN Torino (IT)) ; Simon, Frank (KIT - Karlsruhe Institute of Technology (DE)) ; Vasey, Francois (CERN) ; Barbero, Marlon Benoit (Centre National de la Recherche Scientifique (FR)) ; Baron, Sophie (CERN) ; Borghello, Giulio (CERN) ; Caselle, Michele (KIT - Karlsruhe Institute of Technology (DE)) et al.
The undersigned institutes intend to form a new CERN DRD collaboration to develop future electronic systems and technologies for particle physics detectors. [...]
CERN-DRDC-2024-012 ; DRDC-P-DRD7.
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2024.
DRD7 Proposal
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7.
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8.
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Total ionizing dose effects on ring-oscillators and SRAMs in a commercial 28 nm CMOS technology
/ Borghello, G (CERN) ; Bergamin, G (CERN) ; Ceresa, D (CERN) ; Pejašinović, R (CERN) ; Diaz, F P (CERN) ; Kloukinas, K (CERN) ; Pulli, A (CERN) ; Ripamonti, G (CERN) ; Caratelli, A (CERN) ; Andorno, M (CERN)
A test chip with 368 ring-oscillators and 4 different SRAMs has been designed to study the effect of total ionizing dose on a commercial 28 nm CMOS technology. The chip has been exposed to 1 Grad(SiO$_{2}$), followed by a week of annealing at T = 100 °C. [...]
2023 - 8 p.
- Published in : JINST
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02003
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9.
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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10.
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Rad-hard RISC-V SoC and ASIP ecosystems studies for high-energy physics applications
/ Andorno, M (CERN) ; Andersen, M (CERN) ; Borghello, G (CERN) ; Caratelli, A (CERN) ; Ceresa, D (CERN) ; Dhaliwal, J (CERN) ; Kloukinas, K (CERN) ; Pejasinovic, R (CERN)
The increase in complexity and size of modern ASIC designs in the HEP community and the use of advanced semiconductor fabrication processes raises the need for a shift toward a more abstract design methodology, that takes advantage of modularity and programmability to achieve a faster turnaround time both for design and verification. This contribution will present two complementary approaches, one using a RISC-V based System-on-Chip (SoC) and the other based on Application-Specific Instruction set Processors (ASIP). [...]
2023 - 7 p.
- Published in : JINST 18 (2023) C01018
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01018
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