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A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors / Petasecca, Marco (Perugia U. ; INFN, Perugia) ; Moscatelli, Francesco (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, Daniele (Perugia U. ; INFN, Perugia) ; Pignatel, Giorgio Umberto (Perugia U. ; INFN, Perugia) ; Scarpello, Carlo (Perugia U.) ; Caprai, Giovanni (Perugia U.)
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. [...]
2005 - 4 p. - Published in : 10.1109/NSSMIC.2005.1596601
In : 52nd IEEE Nuclear Science Symposium and Medical Imaging Conference, San Juan, Puerto Rico, 23 - 29 Oct 2005, pp.1490-1493

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RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders / Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003. - 2010. - 73 p.
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1	Pignatel, G
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