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1.
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Charge collection properties of TowerJazz 180 nm CMOS Pixel Sensors in dependence of pixel geometries and bias parameters, studied using a dedicated test-vehicle: the Investigator chip
/ Aglieri Rinella, G. (CERN) ; Chaosong, G. (Hua-Zhong Normal U.) ; di Mauro, A. (CERN) ; Eum, J. (Pusan Natl. U.) ; Hillemanns, H. (CERN) ; Junique, A. (CERN) ; Keil, M. (CERN) ; Kim, D. (Dongguk U.) ; Kim, H. (Pusan Natl. U.) ; Kugathasan, T. (CERN) et al.
This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in the TowerJazz 180 nm CMOS process. These results gave guidance for the optimisation of the diode implemented in ALPIDE, the chip used in the second generation Inner Tracking System of ALICE, and serve as reference for future simulation studies of similar devices. [...]
arXiv:2009.10517.-
2021-02-01 - 15 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 988 (2021) 164859
Fulltext: PDF; Fulltext from Publisher: PDF;
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2.
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Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment
/ Kugathasan, Thanushan (CERN) ; Bates, Richard (SUPA, UK) ; Buttar, Craig (SUPA, UK) ; Berdalovic, Ivan (CERN) ; Blochet, Bastien (CERN) ; Cardella, Roberto Calogero (CERN) ; Dalla, Marco (INFN, Bologna ; Bologna U.) ; Egidos Plaja, Nuria (CERN) ; Hemperek, Tomasz (Bonn U.) ; Van Hoorne, Jacobus Willem (CERN) et al.
The ATLAS experiment at CERN plans to upgrade its Inner Tracking System for the High-Luminosity LHC in 2026. After the ALPIDE monolithic sensor for the ALICE ITS was successfully implemented in a 180 nm CMOS Imaging Sensor technology, the process was modified to combine full sensor depletion with a low sensor capacitance (≈ 2.5fF), for increased radiation tolerance and low analog power consumption. [...]
SISSA, 2017 - 5 p.
- Published in : PoS TWEPP-17 (2017) 047
Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.047
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3.
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A novel source–drain follower for monolithic active pixel sensors
/ Gao, C (CCNU, Wuhan, Inst. Part. Phys.) ; Aglieri, G (CERN) ; Hillemanns, H (CERN) ; Huang, G (CCNU, Wuhan, Inst. Part. Phys.) ; Junique, A (CERN) ; Keil, M (CERN) ; Kim, D (Dongguk U. ; Yonsei U.) ; Kofarago, M (CERN) ; Kugathasan, T (CERN) ; Mager, M (CERN) et al.
Monolithic active pixel sensors (MAPS) receive interest in tracking applications in high energy physics as they integrate sensor and readout electronics in one silicon die with potential for lower material budget and cost, and better performance. Source followers (SFs) are widely used for MAPS readout: they increase charge conversion gain 1/ C eff or decrease the effective sensing node capacitance C eff because the follower action compensates part of the input capacitance. [...]
2016 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 831 (2016) 147-155
In : 10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Xi'an, China, 25 - 29 Sep 2015, pp.147-155
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4.
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Front end optimization for the monolithic active pixel sensor of the ALICE Inner Tracking System upgrade
/ Kim, D (Dongguk U. ; Yonsei U.) ; Rinella, G Aglieri (CERN) ; Cavicchioli, C (CERN) ; Chanlek, N (Suranaree U. of Tech.) ; Collu, A (Cagliari U. ; INFN, Cagliari) ; Degerli, Y (IRFU, Saclay) ; Dorokhov, A (Strasbourg, IPHC) ; Flouzat, C (IRFU, Saclay) ; Gajanana, D (NIKHEF, Amsterdam) ; Gao, C (Hua-Zhong Normal U.) et al.
ALICE plans to replace its Inner Tracking System during the second long shut down of the LHC in 2019 with a new 10 m(2) tracker constructed entirely with monolithic active pixel sensors. The TowerJazz 180 nm CMOS imaging Sensor process has been selected to produce the sensor as it offers a deep pwell allowing full CMOS in-pixel circuitry and different starting materials. [...]
2016
- Published in : JINST 11 (2016) C02042
IOP Open Access article: PDF;
In : Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C02042
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5.
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A CMOS 0.18 μm 600 MHz clock multiplier PLL and a pseudo-LVDS driver for the high speed data transmission for the ALICE Inner Tracking System front-end chip
/ Lattuca, A (Turin U. ; INFN, Turin) ; Mazza, G (INFN, Turin) ; Rinella, G Aglieri (CERN) ; Cavicchioli, C (CERN) ; Chanlek, N (Suranaree U. of Tech.) ; Collu, A (Cagliari U. ; INFN, Cagliari) ; Degerli, Y (IRFU, Saclay) ; Dorokhov, A (Strasbourg, IPHC) ; Flouzat, C (IRFU, Saclay) ; Gajanana, D (NIKHEF, Amsterdam) et al.
This work presents the 600 MHz clock multiplier PLL and the pseudo-LVDS driver which are two essential components of the Data Transmission Unit (DTU), a fast serial link for the 1.2 Gb/s data transmission of the ALICE inner detector front-end chip (ALPIDE). The PLL multiplies the 40 MHz input clock in order to obtain the 600 MHz and the 200 MHz clock for a fast serializer which works in Double Data Rate mode. [...]
2016 - 11 p.
- Published in : JINST 11 (2016) C01066
IOP Open Access article: PDF;
In : Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C01066
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6.
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MAPS development for the ALICE ITS upgrade
/ Yang, P (Hua-Zhong Normal U.) ; Aglieri, G (CERN) ; Cavicchioli, C (CERN) ; Chalmet, P L (Unlisted, FR) ; Chanlek, N (Suranaree U. of Tech.) ; Collu, A (Cagliari U. ; INFN, Cagliari) ; Gao, C (Hua-Zhong Normal U.) ; Hillemanns, H (CERN) ; Junique, A (CERN) ; Kofarago, M (CERN ; Utrecht U.) et al.
Monolithic Active Pixel Sensors (MAPS) offer the possibility to build pixel detectors and tracking layers with high spatial resolution and low material budget in commercial CMOS processes. Significant progress has been made in the field of MAPS in recent years, and they are now considered for the upgrades of the LHC experiments. [...]
2015
- Published in : JINST 10 (2015) C03030
Fulltext: PDF;
In : 7th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Niagara Falls, Ontario, Canada, 1 - 5 Sep 2014, pp.C03030
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7.
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Low-power priority Address-Encoder and Reset-Decoder data-driven readout for Monolithic Active Pixel Sensors for tracker system
/ Yang, P (Hua-Zhong Normal U.) ; Aglieri, G (CERN) ; Cavicchioli, C (CERN) ; Chalmet, P L (Unlisted, FR) ; Chanlek, N (Suranaree U. of Tech.) ; Collu, A (Cagliari U. ; INFN, Italy) ; Gao, C (Hua-Zhong Normal U.) ; Hillemanns, H (CERN) ; Junique, A (CERN) ; Kofarago, M (CERN ; Utrecht U.) et al.
Active Pixel Sensors used in High Energy Particle Physics require low power consumption to reduce the detector material budget, low integration time to reduce the possibilities of pile-up and fast readout to improve the detector data capability. To satisfy these requirements, a novel Address-Encoder and Reset-Decoder (AERD) asynchronous circuit for a fast readout of a pixel matrix has been developed. [...]
2015 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 785 (2015) 61-69
Elsevier Open Access article: PDF;
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8.
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Low power, high resolution MAPS for particle tracking and imaging
/ Giubilato, P (Padua U. ; INFN, Padua) ; Cavicchioli, C (CERN) ; Chalmet, P (CERN) ; Kugathasan, T (CERN) ; Tobon, C Marin (CERN) ; Mattiazzo, S (Padua U.) ; Mugnier, H (CERN) ; Pantano, D (Padua U. ; INFN, Padua) ; Pozzobon, N (Padua U. ; INFN, Padua) ; Rousset, J (CERN) et al.
We describe here the first monolithic pixel detector prototype embedding the OrthoPix architecture, specifically designed to deal with imaging applications where the relevant number of pixel hit per frame (occupancy) is small (on the order or less than 1%), like in High Energy Physics, Medical Imaging and other applications. Current state of the art employs complex circuitry into the pixel cell to discriminate relevant signals, leading to an extremely effective, non-destructive compression at the price of large power consumption and pixel area limitations. [...]
2015 - 12 p.
- Published in : JINST 10 (2015) C05004
IOP Open Access article: PDF;
In : 7th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Niagara Falls, Ontario, Canada, 1 - 5 Sep 2014, pp.C05004
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9.
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Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade
/ Cavicchioli, C (CERN) ; Chalmet, P L (MIND, Archamps) ; Giubilato, P (Padua U. ; INFN, Padua) ; Hillemanns, H (CERN) ; Junique, A (CERN) ; Kugathasan, T (CERN) ; Mager, M (CERN) ; Marin Tobon, C A (Valencia, Polytechnic U.) ; Martinengo, P (CERN) ; Mattiazzo, S (Padua U. ; INFN, Padua) et al.
Within the R&D; activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget (~0.3%X0~0.3%X0 in total for each inner layer) and higher granularity (View the MathML source~20μm×20μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity View the MathML source(ρ>1kΩcm) and 18 μm thick epitaxial layer. [...]
2014
- Published in : Nucl. Instrum. Methods Phys. Res., A 765 (2014) 177-182
Elsevier Open Access article: PDF;
In : 9th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 2 - 6 Sep 2013, pp.177-182
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10.
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CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results
/ Rivetti, A (INFN, Turin) ; Caselle, M (CERN) ; Wyss, J (INFN, Padua ; Cassino U.) ; Bisello, D (INFN, Padua ; Padua U.) ; Costa, M (INFN, Turin ; Turin U. (main)) ; Kloukinas, K (CERN) ; Demaria, N (INFN, Turin) ; Pantano, D (INFN, Padua ; Padua U.) ; Rousset, J (MIND, Archamps) ; Battaglia, M (UC, Santa Cruz (main)) et al.
The LePix project aims at improving the radiation hardness and the readout speed of monolithic CMOS sensors through the use of standard CMOS technologies fabricated on high resistivity substrates. In this context, high resistivity means beyond 400 Omega cm, which is at least one order of magnitude greater than the typical value (1-10 Omega cm) adopted for integrated circuit production [...]
2013
- Published in : Nucl. Instrum. Methods Phys. Res., A 730 (2013) 119-123
In : 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italie, 9 - 12 Oct 2012, pp.119-123
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